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Results: 1-11 |
Results: 11

Authors: Li, HX Daniels-Race, T Hasan, MA
Citation: Hx. Li et al., Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001), J VAC SCI B, 19(4), 2001, pp. 1471-1474

Authors: Meng, QR Daniels-Race, T Lowe, WP
Citation: Qr. Meng et al., Structural calibration of tensile-strained GaAs/InAlAs quantum wells, MICROW OPT, 28(2), 2001, pp. 143-147

Authors: Olafsen, LJ Daniels-Race, T Kendall, RE Teitsworth, SW
Citation: Lj. Olafsen et al., Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias, SUPERLATT M, 27(1), 2000, pp. 39-51

Authors: Williams, MD Greene, AL Daniels-Race, T Lum, RM
Citation: Md. Williams et al., Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organicchemical vapor deposition, APPL SURF S, 157(3), 2000, pp. 123-128

Authors: Li, HX Daniels-Race, T Hasan, MA
Citation: Hx. Li et al., Photoluminescence properties of dense InAs/AlInAs quantum wire arrays, J CRYST GR, 216(1-4), 2000, pp. 527-531

Authors: Li, HX Zhuang, QD Wang, ZG Daniels-Race, T
Citation: Hx. Li et al., Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates, J APPL PHYS, 87(1), 2000, pp. 188-191

Authors: Meng, QR Daniels-Race, T Luo, ZJ McNeil, LE
Citation: Qr. Meng et al., The polarization sensitivity of optical absorption in tensile strained GaAs InAlAs double quantum wells, SUPERLATT M, 25(4), 1999, pp. 583-590

Authors: Li, HX Zhuang, QD Kong, XW Wang, ZG Daniels-Race, T
Citation: Hx. Li et al., Self-organization of wire-like InAs nanostructures on InP, J CRYST GR, 205(4), 1999, pp. 613-617

Authors: Li, HX Daniels-Race, T Wang, ZG
Citation: Hx. Li et al., Structural and optical characterization of InAs nanostructures grown on high-index InP substrates, J CRYST GR, 200(1-2), 1999, pp. 321-325

Authors: Li, HX Wu, J Wang, ZG Daniels-Race, T
Citation: Hx. Li et al., High-density InAs nanowires realized in situ on (100) InP, APPL PHYS L, 75(8), 1999, pp. 1173-1175

Authors: Li, HX Daniels-Race, T Wang, ZG
Citation: Hx. Li et al., Growth mode and strain relaxation of InAs on InP (111)A grown by molecularbeam epitaxy, APPL PHYS L, 74(10), 1999, pp. 1388-1390
Risultati: 1-11 |