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Results:
1-17
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Results: 17
Authors:
Kim, HS
Sung, YJ
Kim, DW
Kim, T
Dawson, MD
Yeom, GY
Citation: Hs. Kim et al., Etch end-point detection of GaN-based devices using optical emission spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 159-162
Authors:
Kim, T
Martin, RW
Watson, IM
Dawson, MD
Krauss, TF
Marsh, JH
De la Rue, RM
Citation: T. Kim et al., Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers., MAT SCI E B, 82(1-3), 2001, pp. 245-247
Authors:
Kim, T
Kim, HS
Hetterich, M
Jones, D
Girkin, JM
Bente, E
Dawson, MD
Citation: T. Kim et al., Femtosecond laser machining of gallium nitride, MAT SCI E B, 82(1-3), 2001, pp. 262-264
Authors:
Edwards, PR
Martin, RW
Kim, HS
Kim, KS
Cho, Y
Watson, IM
Sands, T
Cheung, NW
Dawson, MD
Citation: Pr. Edwards et al., InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching, PHYS ST S-B, 228(1), 2001, pp. 91-94
Authors:
Kim, KS
Edwards, PR
Kim, HS
Martin, RW
Watson, IM
Dawson, MD
Citation: Ks. Kim et al., Characterisation of optical properties in micro-patterned InGaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 169-172
Authors:
Dawson, MD
Brucker, PS
Citation: Md. Dawson et Ps. Brucker, The utility of the Delphi method in MFT research, AM J FAM TH, 29(2), 2001, pp. 125-140
Authors:
Martin, RW
Edwards, PR
Pecharroman-Gallego, R
Trager-Cowan, C
Kim, T
Kim, HS
Kim, KS
Watson, IM
Dawson, MD
Krauss, TF
Marsh, JH
De la Rue, RM
Citation: Rw. Martin et al., Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities, PHYS ST S-A, 183(1), 2001, pp. 145-149
Authors:
Martin, RW
Edwards, PR
Kim, HS
Kim, KS
Kim, T
Watson, IM
Dawson, MD
Cho, Y
Sands, T
Cheung, NW
Citation: Rw. Martin et al., Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback, APPL PHYS L, 79(19), 2001, pp. 3029-3031
Authors:
Burns, D
Hetterich, M
Ferguson, AI
Bente, E
Dawson, MD
Davies, JI
Bland, SW
Citation: D. Burns et al., High-average-power (> 20-W) Nd : YVO4 lasers mode locked by strain-compensated saturable Bragg reflectors, J OPT SOC B, 17(6), 2000, pp. 919-926
Authors:
Valentine, GJ
Kemp, AJ
Birkin, DJL
Burns, D
Balembois, F
Georges, P
Bernas, H
Aron, A
Aka, G
Sibbett, W
Brun, A
Dawson, MD
Bente, E
Citation: Gj. Valentine et al., Femtosecond Yb : YCOB laser pumped by narrow-stripe laser diode and passively modelocked using ion implanted saturable-absorber mirror, ELECTR LETT, 36(19), 2000, pp. 1621-1623
Authors:
Hetterich, M
Dawson, MD
Egorov, AY
Bernklau, D
Riechert, H
Citation: M. Hetterich et al., Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content, APPL PHYS L, 76(8), 2000, pp. 1030-1032
Authors:
Holm, MA
Ferguson, DBAI
Dawson, MD
Citation: Ma. Holm et al., Actively stabilized single-frequency vertical-external-cavity AlGaAs laser, IEEE PHOTON, 11(12), 1999, pp. 1551-1553
Authors:
Martin, RW
Kim, T
Burns, D
Watson, IM
Dawson, MD
Krauss, TF
Marsh, JH
De la Rue, RM
Romani, S
Kheyrandish, H
Citation: Rw. Martin et al., Dielectric Bragg mirrors for InGaN surface-emitting lasers, PHYS ST S-A, 176(1), 1999, pp. 67-71
Authors:
Robertson, A
Ernst, U
Knappe, R
Wallenstein, R
Scheuer, V
Tschudi, T
Burns, D
Dawson, MD
Ferguson, AI
Citation: A. Robertson et al., Prismless diode-pumped mode-locked femtosecond Cr : LiSAF laser, OPT COMMUN, 163(1-3), 1999, pp. 38-43
Authors:
Graf, T
Ferguson, AI
Bente, E
Burns, D
Dawson, MD
Citation: T. Graf et al., Multi-Watt Nd : YVO4 laser, mode locked by a semiconductor saturable absorber mirror and side-pumped by a diode-laser bar, OPT COMMUN, 159(1-3), 1999, pp. 84-87
Authors:
Holm, MA
Burns, D
Cusumano, P
Ferguson, AI
Dawson, MD
Citation: Ma. Holm et al., High-power diode-pumped AlGaAs surface-emitting laser, APPL OPTICS, 38(27), 1999, pp. 5781-5784
Authors:
Graf, T
McConnell, G
Ferguson, AI
Bente, E
Burns, D
Dawson, MD
Citation: T. Graf et al., Synchronously pumped optical parametric oscillation in periodically poled lithium niobate with 1-W average output power, APPL OPTICS, 38(15), 1999, pp. 3324-3328
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