Authors:
Van Roy, W
Roelfsema, RFB
Liu, ZY
Akinaga, H
Miyanishi, S
Manago, T
Borghs, G
De Boeck, J
Citation: W. Van Roy et al., Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts, J CRYST GR, 227, 2001, pp. 852-856
Authors:
Liu, ZY
Boeve, H
Van Roy, W
Nemeth, S
Moshchalkov, VV
Borghs, G
De Boeck, J
Citation: Zy. Liu et al., Growth and tunneling spectroscopy study of Fe/(GaAs,AlAs)/Ga1-xMnxAs ferromagnet/semiconductor heterostructures, J CRYST GR, 227, 2001, pp. 867-873
Authors:
Dessein, K
Kumar, PSA
Nemeth, S
Delaey, L
Borghs, G
De Boeck, J
Citation: K. Dessein et al., The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures, J CRYST GR, 227, 2001, pp. 906-910
Citation: H. Boeve et al., Experimental study of the local magnetization reversal in exchange-biased spin-valve sensors, IEEE MAGNET, 37(4), 2001, pp. 3062-3064
Authors:
Ofuchi, H
Oshima, M
Tabuchi, M
Takeda, Y
Akinaga, H
Nemeth, S
De Boeck, J
Borghs, G
Citation: H. Ofuchi et al., Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy, APPL PHYS L, 78(17), 2001, pp. 2470-2472
Authors:
Behet, M
De Boeck, J
Borghs, G
Mijlemans, P
Citation: M. Behet et al., Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates, SENS ACTU-A, 79(3), 2000, pp. 175-178
Authors:
Girgis, E
Boeve, H
De Boeck, J
Schelten, J
Rottlander, P
Kohlstedt, H
Grunberg, P
Citation: E. Girgis et al., Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method, J MAGN MAGN, 222(1-2), 2000, pp. 133-137
Citation: H. Boeve et al., Experimental study of the local magnetization reversal in exchange-biased spin-valve sensors, IEEE MAGNET, 36(5), 2000, pp. 3059-3061
Authors:
Boeve, H
Sousa, RC
Freitas, PP
De Boeck, J
Borghs, G
Citation: H. Boeve et al., Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes, ELECTR LETT, 36(21), 2000, pp. 1782-1783