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Results: 1-25/113
Selective area mass transport regrowth of gallium nitride
Authors: Heikman, S DenBaars, SP Mishra, UK
Citation: S. Heikman et al., Selective area mass transport regrowth of gallium nitride, JPN J A P 1, 40(2A), 2001, pp. 565-566
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
Authors: Haberer, ED Chen, CH Hansen, M Keller, S DenBaars, SP Mishra, UK Hu, EL
Citation: Ed. Haberer et al., Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN, J VAC SCI B, 19(3), 2001, pp. 603-608
Gallium nitride based transistors
Authors: Xing, H Keller, S Wu, YF McCarthy, L Smorchkova, IP Buttari, D Coffie, R Green, DS Parish, G Heikman, S Shen, L Zhang, N Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: H. Xing et al., Gallium nitride based transistors, J PHYS-COND, 13(32), 2001, pp. 7139-7157
Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure
Authors: Dziuba, Z Gorska, M Antoszewski, J Babinski, A Kozodoy, P Keller, S Keller, B DenBaars, SP Mishra, UK
Citation: Z. Dziuba et al., Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure, APPL PHYS A, 72(6), 2001, pp. 691-698
AlGaN/AlN/GaN high-power microwave HEMT
Authors: Shen, L Heikman, S Moran, B Coffie, R Zhang, NQ Buttari, D Smorchkova, IP Keller, S DenBaars, SP Mishra, UK
Citation: L. Shen et al., AlGaN/AlN/GaN high-power microwave HEMT, IEEE ELEC D, 22(10), 2001, pp. 457-459
Capture kinetics of electron traps in MBE-grown n-GaN
Authors: Hierro, A Arehart, AR Heying, B Hansen, M Speck, JS Mishra, UK DenBaars, SP Ringel, SA
Citation: A. Hierro et al., Capture kinetics of electron traps in MBE-grown n-GaN, PHYS ST S-B, 228(1), 2001, pp. 309-313
Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells
Authors: Vehse, M Michler, P Gutowski, J Figge, S Hommel, D Selke, H Keller, S DenBaars, SP
Citation: M. Vehse et al., Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells, SEMIC SCI T, 16(5), 2001, pp. 406-412
Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319
Authors: Perlin, P Gorczyca, I Suski, T Wisniewski, P Lepkowski, S Christensen, NE Svane, A Hansen, M DenBaars, SP Damilano, B Grandjean, N Massies, J
Citation: P. Perlin et al., Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319, PHYS REV B, 6411(11), 2001, pp. 5319
Femtosecond pump-probe spectroscopy and time-resolved photoluminescence ofan InxGa1-xN/GaN double heterostructure - art. no. 195302
Authors: Choi, CK Little, BD Kwon, YH Lam, JB Song, JJ Chang, YC Keller, S Mishra, UK DenBaars, SP
Citation: Ck. Choi et al., Femtosecond pump-probe spectroscopy and time-resolved photoluminescence ofan InxGa1-xN/GaN double heterostructure - art. no. 195302, PHYS REV B, 6319(19), 2001, pp. 5302
Spin coherence and dephasing in GaN - art. no. 121202
Authors: Beschoten, B Johnston-Halperin, E Young, DK Poggio, M Grimaldi, JE Keller, S DenBaars, SP Mishra, UK Hu, EL Awschalom, DD
Citation: B. Beschoten et al., Spin coherence and dephasing in GaN - art. no. 121202, PHYS REV B, 6312(12), 2001, pp. 1202
Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy
Authors: Sun, CK Chu, SW Tai, SP Keller, S Abare, A Mishra, UK DenBaars, SP
Citation: Ck. Sun et al., Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy, SCANNING, 23(3), 2001, pp. 182-192
Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes
Authors: Chichibu, SF Sota, T Wada, K Brandt, O Ploog, KH DenBaars, SP Nakamura, S
Citation: Sf. Chichibu et al., Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes, PHYS ST S-A, 183(1), 2001, pp. 91-98
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, J CRYST GR, 233(4), 2001, pp. 709-716
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grownby plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Chen, L Mates, T Shen, L Heikman, S Moran, B Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grownby plasma-assisted molecular-beam epitaxy, J APPL PHYS, 90(10), 2001, pp. 5196-5201
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
Authors: Marchand, H Zhao, L Zhang, N Moran, B Coffie, R Mishra, UK Speck, JS DenBaars, SP Freitas, JA
Citation: H. Marchand et al., Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors, J APPL PHYS, 89(12), 2001, pp. 7846-7851
GaNHBT: Toward an RF device
Authors: McCarthy, LS Smorchkova, IP Xing, HL Kozodoy, P Fini, P Limb, J Pulfrey, DL Speck, JS Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., GaNHBT: Toward an RF device, IEEE DEVICE, 48(3), 2001, pp. 543-551
Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
Authors: Keller, S Wu, YF Parish, G Ziang, NQ Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: S. Keller et al., Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB, IEEE DEVICE, 48(3), 2001, pp. 552-559
Investigations of chemical vapor deposition of GaN using synchrotron radiation
Authors: Thompson, C Stephenson, GB Eastman, JA Munkholm, A Auciello, O Murty, MVR Fini, P DenBaars, SP Speck, JS
Citation: C. Thompson et al., Investigations of chemical vapor deposition of GaN using synchrotron radiation, J ELCHEM SO, 148(5), 2001, pp. C390-C394
Infrared and Raman-scattering studies in single-crystalline GaN nanowires
Authors: Liu, HL Chen, CC Chia, CT Yeh, CC Chen, CH Yu, MY Keller, S DenBaars, SP
Citation: Hl. Liu et al., Infrared and Raman-scattering studies in single-crystalline GaN nanowires, CHEM P LETT, 345(3-4), 2001, pp. 245-251
Band gap bowing and exciton localization in strained cubic InxGa1-xN filmsgrown on 3C-SiC (001) by rf molecular-beam epitaxy
Authors: Chichibu, SF Sugiyama, M Kuroda, T Tackeuchi, A Kitamura, T Nakanishi, H Sota, T DenBaars, SP Nakamura, S Ishida, Y Okumura, H
Citation: Sf. Chichibu et al., Band gap bowing and exciton localization in strained cubic InxGa1-xN filmsgrown on 3C-SiC (001) by rf molecular-beam epitaxy, APPL PHYS L, 79(22), 2001, pp. 3600-3602
Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition
Authors: Keller, S Heikman, S Ben-Yaacov, I Shen, L DenBaars, SP Mishra, UK
Citation: S. Keller et al., Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition, APPL PHYS L, 79(21), 2001, pp. 3449-3451
Generation of coherent acoustic phonons in strained GaN thin films
Authors: Huang, YK Chern, GW Sun, CK Smorchkova, Y Keller, S Mishra, U DenBaars, SP
Citation: Yk. Huang et al., Generation of coherent acoustic phonons in strained GaN thin films, APPL PHYS L, 79(20), 2001, pp. 3361-3363
Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates
Authors: Katona, TM Craven, MD Fini, PT Speck, JS DenBaars, SP
Citation: Tm. Katona et al., Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates, APPL PHYS L, 79(18), 2001, pp. 2907-2909
Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells
Authors: Sun, CK Huang, YK Liang, JC Abare, A DenBaars, SP
Citation: Ck. Sun et al., Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells, APPL PHYS L, 78(9), 2001, pp. 1201-1203
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