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Results: 26-50/113
Authors:
Huang, YC
Liang, JC
Sun, CK
Abare, A
DenBaars, SP
Citation: Yc. Huang et al., Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells, APPL PHYS L, 78(7), 2001, pp. 928-930
Authors:
Vaschenko, G
Patel, D
Menoni, CS
Keller, S
Mishra, UK
DenBaars, SP
Citation: G. Vaschenko et al., Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells, APPL PHYS L, 78(5), 2001, pp. 640-642
Authors:
Keller, S
Vetury, R
Parish, G
DenBaars, SP
Mishra, UK
Citation: S. Keller et al., Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors, APPL PHYS L, 78(20), 2001, pp. 3088-3090
Authors:
Heikman, S
Keller, S
DenBaars, SP
Mishra, UK
Citation: S. Heikman et al., Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN, APPL PHYS L, 78(19), 2001, pp. 2876-2878
Authors:
Sun, CK
Liang, JC
Yu, XY
Keller, S
Mishra, UK
DenBaars, SP
Citation: Ck. Sun et al., Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states, APPL PHYS L, 78(18), 2001, pp. 2724-2726
Authors:
McCarthy, L
Smorchkova, I
Xing, H
Fini, P
Keller, S
Speck, J
DenBaars, SP
Rodwell, MJW
Mishra, UK
Citation: L. Mccarthy et al., Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 78(15), 2001, pp. 2235-2237
Authors:
Stonas, AR
Margalith, T
DenBaars, SP
Coldren, LA
Hu, EL
Citation: Ar. Stonas et al., Development of selective lateral photoelectrochemical etching of InGaN/GaNfor lift-off applications, APPL PHYS L, 78(13), 2001, pp. 1945-1947
Authors:
Chichibu, SF
Shikanai, A
Deguchi, T
Setoguchi, A
Nakai, R
Nakanishi, H
Wada, K
DenBaars, SP
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Comparison of optical properties of GaN/AlGaN and InGaN/AlGaN single quantum wells, JPN J A P 1, 39(4B), 2000, pp. 2417-2424
Authors:
Elsass, CR
Smorchkova, IP
Ben, HY
Haus, E
Poblenz, C
Fini, P
Maranowski, K
Petroff, PM
DenBaars, SP
Mishra, UK
Speck, JS
Saxler, A
Elhamri, S
Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Authors:
Cho, YH
Schmidt, TJ
Bidnyk, S
Gainer, GH
Song, JJ
Keller, S
Mishra, UK
DenBaars, SP
Citation: Yh. Cho et al., Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures, PHYS REV B, 61(11), 2000, pp. 7571-7588
Authors:
Hansen, M
Fini, P
Zhao, LJ
Abare, A
Coldren, LA
Speck, JS
DenBaars, SP
Citation: M. Hansen et al., Improved characteristics of InGaN multi-quantum-well laser diodes grown onlaterally epitaxially overgrown GaN on sapphire, MRS I J N S, 5, 2000, pp. NIL_11-NIL_16
Authors:
Hansen, M
Abare, AC
Kozodoy, P
Katona, TM
Craven, MD
Speck, JS
Mishra, UK
Coldren, LA
DenBaars, SP
Citation: M. Hansen et al., Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes, MRS I J N S, 5, 2000, pp. NIL_17-NIL_22
Authors:
Saxler, A
Debray, P
Perrin, R
Elhamri, S
Mitchel, WC
Elsass, CR
Smorchkova, LP
Heying, B
Haus, E
Fini, P
Ibbetson, JP
Keller, S
Petroff, PM
DenBaars, SP
Mishra, UK
Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Authors:
Hierro, A
Kwon, D
Ringel, SA
Hansen, M
Mishra, UK
DenBaars, SP
Speck, JS
Citation: A. Hierro et al., Deep levels in n-type Schottky and p(+)-n homojunction GaN diodes, MRS I J N S, 5, 2000, pp. NIL_792-NIL_797
Authors:
Kwon, YH
Gainer, GH
Bidnyk, S
Cho, YH
Song, JJ
Hansen, M
DenBaars, SP
Citation: Yh. Kwon et al., Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions, MRS I J N S, 5, 2000, pp. NIL_840-NIL_845
Authors:
Mason, B
Barton, J
Fish, GA
Coldren, LA
DenBaars, SP
Citation: B. Mason et al., Design of sampled grating DBR lasers with integrated semiconductor opticalamplifiers, IEEE PHOTON, 12(7), 2000, pp. 762-764
Authors:
Munkholm, A
Thompson, C
Stephenson, GB
Eastman, JA
Auciello, O
Fini, P
Speck, JS
DenBaars, SP
Citation: A. Munkholm et al., Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment, PHYSICA B, 283(1-3), 2000, pp. 217-222
Authors:
Sun, CK
Liang, JC
DenBaars, SP
Kim, DS
Cho, YD
Sanders, GD
Simmons, J
Stanton, CJ
Citation: Ck. Sun et al., The influence of surfaces and interfaces on coherent phonons in semiconductors, SUPERLATT M, 27(5-6), 2000, pp. 593-596
Authors:
Zhang, NQ
Keller, S
Parish, G
Heikman, S
DenBaars, SP
Mishra, UK
Citation: Nq. Zhang et al., High breakdown GaNHEMT with overlapping gate structure, IEEE ELEC D, 21(9), 2000, pp. 421-423
Authors:
Murty, MVR
Fini, P
Stephenson, GB
Thompson, C
Eastman, JA
Munkholm, A
Auciello, O
Jothilingam, R
DenBaars, SP
Speck, JS
Citation: Mvr. Murty et al., Step bunching on the vicinal GaN(0001) surface, PHYS REV B, 62(16), 2000, pp. R10661-R10664
Authors:
Johnson, NM
Nurmikko, AV
DenBaars, SP
Citation: Nm. Johnson et al., Blue diode lasers, PHYS TODAY, 53(10), 2000, pp. 31-36
Authors:
Munkholm, A
Stephenson, GB
Eastman, JA
Auciello, O
Murty, MVR
Thompson, C
Fini, P
Speck, JS
DenBaars, SP
Citation: A. Munkholm et al., In situ studies of the effect of silicon on GaN growth modes, J CRYST GR, 221, 2000, pp. 98-105
Authors:
Moran, B
Hansen, M
Craven, MD
Speck, JS
DenBaars, SP
Citation: B. Moran et al., Growth and characterization of graded AlCaN conducting buffer layers on n(+) SiC substrates, J CRYST GR, 221, 2000, pp. 301-304
Authors:
Fini, P
Marchand, H
Ibbetson, JP
DenBaars, SP
Mishra, UK
Speck, JS
Citation: P. Fini et al., Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction, J CRYST GR, 209(4), 2000, pp. 581-590
Authors:
Elhamri, S
Saxler, A
Mitchel, WC
Elsass, CR
Smorchkova, IP
Heying, B
Haus, E
Fini, P
Ibbetson, JP
Keller, S
Petroff, PM
DenBaars, SP
Mishra, UK
Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588