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Results: << | 101-113 |
Results: 101-113/113
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
Authors: Kozodoy, P Hansen, M DenBaars, SP Mishra, UK
Citation: P. Kozodoy et al., Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices, APPL PHYS L, 74(24), 1999, pp. 3681-3683
High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Maranowski, K Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(23), 1999, pp. 3528-3530
Observation of growth modes during metal-organic chemical vapor depositionof GaN
Authors: Stephenson, GB Eastman, JA Thompson, C Auciello, O Thompson, LJ Munkholm, A Fini, P DenBaars, SP Speck, JS
Citation: Gb. Stephenson et al., Observation of growth modes during metal-organic chemical vapor depositionof GaN, APPL PHYS L, 74(22), 1999, pp. 3326-3328
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
Authors: Rosner, SJ Girolami, G Marchand, H Fini, PT Ibbetson, JP Zhao, L Keller, S Mishra, UK DenBaars, SP Speck, JS
Citation: Sj. Rosner et al., Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride, APPL PHYS L, 74(14), 1999, pp. 2035-2037
Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well
Authors: Evoy, S Harnett, CK Craighead, HG Keller, S Mishra, UK DenBaars, SP
Citation: S. Evoy et al., Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well, APPL PHYS L, 74(10), 1999, pp. 1457-1459
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Authors: Chichibu, SF Marchand, H Minsky, MS Keller, S Fini, PT Ibbetson, JP Fleischer, SB Speck, JS Bowers, JE Hu, E Mishra, UK DenBaars, SP Deguchi, T Soto, T Nakamura, S
Citation: Sf. Chichibu et al., Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth, APPL PHYS L, 74(10), 1999, pp. 1460-1462
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
Authors: Schmidt, TJ Cho, YH Gainer, GH Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Tj. Schmidt et al., Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells, APPL PHYS L, 73(5), 1999, pp. 560-562
Optical properties of InGaN/GaN quantum wells with Si doped barriers
Authors: Minsky, MS Chichibu, S Fleischer, SB Abare, AC Bowers, JE Hu, EL Keller, S Mishra, UK DenBaars, SP
Citation: Ms. Minsky et al., Optical properties of InGaN/GaN quantum wells with Si doped barriers, JPN J A P 2, 37(11B), 1998, pp. L1362-L1364
Metalorganic chemical vapor deposition (MOCVD) of group III nitrides
Authors: DenBaars, SP Keller, S
Citation: Sp. Denbaars et S. Keller, Metalorganic chemical vapor deposition (MOCVD) of group III nitrides, SEM SEMIMET, 50, 1998, pp. 11-37
Effect of the growth rate and the barrier doping on the morphology and theproperties of InGaN/GaN quantum wells
Authors: Keller, S Chichibu, SF Minsky, MS Hu, E Mishra, UK DenBaars, SP
Citation: S. Keller et al., Effect of the growth rate and the barrier doping on the morphology and theproperties of InGaN/GaN quantum wells, J CRYST GR, 195(1-4), 1998, pp. 258-264
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
Authors: Marchand, H Ibbetson, JP Fini, PT Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: H. Marchand et al., Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 328-332
Measurement of gain current relations for InGaN multiple quantum wells
Authors: Abare, AC Mack, MP Hansen, M Speck, JS Coldren, LA DenBaars, SP Meyer, GA Lehew, SL Cooper, GA
Citation: Ac. Abare et al., Measurement of gain current relations for InGaN multiple quantum wells, APPL PHYS L, 73(26), 1998, pp. 3887-3889
Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
Authors: Schmidt, TJ Bidnyk, S Cho, YH Fischer, AJ Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Tj. Schmidt et al., Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence, APPL PHYS L, 73(25), 1998, pp. 3689-3691
Risultati: << | 101-113 |