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Results: 1-25/28
Authors:
Devine, RAB
Herrera, GV
Citation: Rab. Devine et Gv. Herrera, Electric-field-induced transport of protons in amorphous SiO2 - art. no. 233406, PHYS REV B, 6323(23), 2001, pp. 3406
Authors:
Busani, T
Devine, RAB
Martini, M
Spinolo, G
Vedda, A
Citation: T. Busani et al., Electronic traps in mixed Si1-xGexO2 films, J NON-CRYST, 280(1-3), 2001, pp. 177-182
Authors:
Chavez, JR
Devine, RAB
Koltunski, L
Citation: Jr. Chavez et al., Evidence for hole and electron trapping in plasma deposited ZrO2 thin films, J APPL PHYS, 90(8), 2001, pp. 4284-4286
Authors:
Devine, RAB
Revesz, AG
Citation: Rab. Devine et Ag. Revesz, Concentration dependence of the dielectric constant in mixed oxides MxOyMp' O-q, J APPL PHYS, 90(1), 2001, pp. 389-393
Authors:
Devine, RAB
Citation: Rab. Devine, Comparitive behavior of radiation and thermally generated protons in amorphous SiO2, J APPL PHYS, 89(4), 2001, pp. 2246-2250
Authors:
Koltunski, L
Devine, RAB
Citation: L. Koltunski et Rab. Devine, Infrared properties of room-temperature-deposited ZrO2, APPL PHYS L, 79(3), 2001, pp. 320-322
Authors:
Kurtz, HA
Devine, RAB
Citation: Ha. Kurtz et Rab. Devine, Role of bond coordination and molecular volume on the dielectric constant of mixed-oxide compounds, APPL PHYS L, 79(15), 2001, pp. 2342-2344
Authors:
Four, S
Devine, RAB
Brunel, M
Citation: S. Four et al., Characterization of plasma deposited Ta2O5 films using grazing incidence x-ray scattering, J VAC SCI A, 18(2), 2000, pp. 554-556
Authors:
Devine, NFM
Robertson, J
Girault, V
Devine, RAB
Citation: Nfm. Devine et al., Dispersive transport of protons in oxides confined in Si/SiO2/Si structures, PHYS REV B, 61(23), 2000, pp. 15565-15568
Authors:
Devine, RAB
Herrera, GV
Citation: Rab. Devine et Gv. Herrera, Retention and switching kinetics of protonated gate field-effect transistors, J APPL PHYS, 88(5), 2000, pp. 2862-2867
Authors:
Devine, RAB
Vanheusden, K
Herrera, GV
Citation: Rab. Devine et al., Correlation of mobile and fixed charge creation in protonated field-effecttransistors, APPL PHYS L, 77(4), 2000, pp. 579-581
Authors:
Devine, RAB
Citation: Rab. Devine, Evidence for an isotope effect in the electrical transport of thermally generated mobile charges in amorphous SiO2, APPL PHYS L, 77(25), 2000, pp. 4163-4165
Authors:
Devine, RAB
Citation: Rab. Devine, Electric-field dependence of mobile proton-induced switching in protonatedgate oxide field-effect transistors, APPL PHYS L, 77(12), 2000, pp. 1849-1851
Authors:
Vanheusden, K
Devine, RAB
Citation: K. Vanheusden et Rab. Devine, The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si-SiO2 interface, APPL PHYS L, 76(21), 2000, pp. 3109-3111
Authors:
Chaneliere, C
Four, S
Autran, JL
Devine, RAB
Citation: C. Chaneliere et al., Dielectric permittivity of amorphous and hexagonal electron cyclotron resonance plasma deposited Ta2O5 thin films, EL SOLID ST, 2(6), 1999, pp. 291-293
Authors:
Luo, EZ
Sundaravel, B
Guo, HY
Wilson, IH
Four, S
Devine, RAB
Citation: Ez. Luo et al., Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source, J VAC SCI A, 17(6), 1999, pp. 3235-3239
Authors:
Girault, V
Devine, RAB
Warren, WL
Vanheusden, K
Citation: V. Girault et al., A study of proton generation in Si/SiO2/Si structures, MICROEL ENG, 48(1-4), 1999, pp. 167-170
Authors:
Vanheusden, K
Fleetwood, DM
Devine, RAB
Warren, WL
Citation: K. Vanheusden et al., Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides, MICROEL ENG, 48(1-4), 1999, pp. 363-366
Authors:
Chaneliere, C
Four, S
Autran, JL
Devine, RAB
Citation: C. Chaneliere et al., Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si, MICROEL REL, 39(2), 1999, pp. 261-268
Authors:
Vanheusden, K
Warren, WL
Devine, RAB
Fleetwood, DM
Draper, BL
Schwank, JR
Citation: K. Vanheusden et al., A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films, J NON-CRYST, 254, 1999, pp. 1-10
Authors:
Girault, V
Devine, RAB
Citation: V. Girault et Rab. Devine, Motion of hydrogen ions in the proton memory, J NON-CRYST, 254, 1999, pp. 57-65
Authors:
Busani, T
Plantier, H
Devine, RAB
Hernandez, C
Campidelli, Y
Citation: T. Busani et al., Growth kinetics and physical characterisation of Si1-xGexO2 films obtainedby plasma assisted oxidation, J NON-CRYST, 254, 1999, pp. 80-88
Authors:
Four, S
Devine, RAB
Luo, EZ
Wilson, IH
Cheng, HS
Citation: S. Four et al., Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source, J NON-CRYST, 254, 1999, pp. 139-145
Authors:
Chaneliere, C
Autran, JL
Four, S
Devine, RAB
Balland, B
Citation: C. Chaneliere et al., Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures, J NON-CRYST, 245, 1999, pp. 73-78
Authors:
Spinolo, G
Devine, RAB
Vedda, A
Autran, JL
Citation: G. Spinolo et al., SiO2 and advanced dielectrics - Proceedings of the 2nd Franco-Italian symposium on SiO2 and advanced dielectrics - L'Aquila, Italy, June 15-17, 1998 - Preface, J NON-CRYST, 245, 1999, pp. VII-VII