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Results: 1-18 |
Results: 18
The oxide layer charging in SIMOX structures
Authors: Askinazi, AY Baraban, AP Dmitriev, VA Miloglyadova, LV
Citation: Ay. Askinazi et al., The oxide layer charging in SIMOX structures, TECH PHYS L, 27(5), 2001, pp. 422-423
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy, SOL ST ELEC, 45(2), 2001, pp. 249-253
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates, SOL ST ELEC, 45(2), 2001, pp. 261-265
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
GaN 20-mm diameter ingots grown from melt-solution by seeded technique
Authors: Sukhoveyev, VA Ivantsov, VA Nikitina, IP Babanin, AI Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Dmitriev, VA
Citation: Va. Sukhoveyev et al., GaN 20-mm diameter ingots grown from melt-solution by seeded technique, MRS I J N S, 5, 2000, pp. NIL_376-NIL_381
Deep centers and persistent photoconductivity studies in variously grown GaN films
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Pushnyi, BV Tsvetkov, DV Stepanov, SI Dmitriev, VA Mil'vidskii, MG Pavlov, VF
Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803
TEM investigation of silicon carbide wafers with reduced micropipe density
Authors: Saddow, SE Schattner, TE Shamsuzzoha, M Rendakova, SV Dmitriev, VA
Citation: Se. Saddow et al., TEM investigation of silicon carbide wafers with reduced micropipe density, J ELEC MAT, 29(3), 2000, pp. 364-367
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Theys, B Jomard, F Nikitina, IP Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
Authors: Zubrilov, AS Melnik, YV Nikolaev, AE Jacobson, MA Nelson, DK Dmitriev, VA
Citation: As. Zubrilov et al., Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy, SEMICONDUCT, 33(10), 1999, pp. 1067-1071
Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density
Authors: Saddow, SE Mazzola, MS Rendakova, SV Dmitriev, VA
Citation: Se. Saddow et al., Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density, MAT SCI E B, 61-2, 1999, pp. 158-160
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy
Authors: Foxon, CT Cheng, TS Novikov, SV Jeffs, NJ Hughes, OH Melnik, YV Nikolaev, AE Dmitriev, VA
Citation: Ct. Foxon et al., Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy, SURF SCI, 421(3), 1999, pp. 377-385
Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Tsvetkov, DV Stepanov, SI Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy, SOL ST ELEC, 43(10), 1999, pp. 1937-1943
GaN/SiC quasi-substrates for GaN-based LEDs
Authors: Schwegler, V Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Melnik, YV Nikolaev, AE Tsvetkov, D Dmitriev, VA
Citation: V. Schwegler et al., GaN/SiC quasi-substrates for GaN-based LEDs, PHYS ST S-A, 176(1), 1999, pp. 99-102
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
Authors: Albrecht, M Nikitina, IP Nikolaev, AE Melnik, YV Dmitriev, VA Strunk, HP
Citation: M. Albrecht et al., Dislocation reduction in AlN and GaN bulk crystals grown by HVPE, PHYS ST S-A, 176(1), 1999, pp. 453-458
Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN
Authors: Salviati, G Albrecht, M Zanotti-Fregonara, C Armani, N Mayer, M Shreter, Y Guzzi, M Melnik, YV Vassilevski, K Dmitriev, VA Strunk, HP
Citation: G. Salviati et al., Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN, PHYS ST S-A, 171(1), 1999, pp. 325-339
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT
Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18
Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates
Authors: Kuznetsov, NI Nikolaev, AE Zubrilov, AS Melnik, YV Dmitriev, VA
Citation: Ni. Kuznetsov et al., Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates, APPL PHYS L, 75(20), 1999, pp. 3138-3140
SiC fabrication technology: Growth and doping
Authors: Dmitriev, VA Spencer, MG
Citation: Va. Dmitriev et Mg. Spencer, SiC fabrication technology: Growth and doping, SEM SEMIMET, 52, 1998, pp. 21-75
Risultati: 1-18 |