AAAAAA
Results:
1-14
|
Results: 14
Authors:
Castan, H
Duenas, S
Barbolla, J
Blanco, N
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques, JPN J A P 1, 40(7), 2001, pp. 4479-4484
Authors:
Redondo, E
Martil, I
Gonzalez-Diaz, G
Castan, H
Duenas, S
Citation: E. Redondo et al., Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures, J VAC SCI B, 19(1), 2001, pp. 186-191
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface, J MAT S-M E, 12(4-6), 2001, pp. 263-267
Authors:
Duenas, S
Castan, H
Barbolla, J
Kola, RR
Sullivan, PA
Citation: S. Duenas et al., DLTS and conductance transient investigation on defects in anodic tantalumpentoxide thin films, J MAT S-M E, 12(4-6), 2001, pp. 317-321
Authors:
Duenas, S
Castan, E
Barbolla, J
Kola, RR
Sullivan, PA
Citation: S. Duenas et al., Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric, SOL ST ELEC, 45(8), 2001, pp. 1441-1450
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx : H/InP metal-insulator-semiconductor structures, JPN J A P 1, 39(11), 2000, pp. 6212-6215
Authors:
Duenas, S
Castan, H
Barbolla, J
Kola, RR
Sullivan, PA
Citation: S. Duenas et al., Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress, MICROEL REL, 40(4-5), 2000, pp. 659-662
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Blanco, N
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTSand conductance transient techniques, MICROEL REL, 40(4-5), 2000, pp. 845-848
Authors:
Duenas, S
Pelaez, R
Castan, E
Pinacho, R
Quintanilla, L
Barbolla, J
Martil, I
Redondo, E
Gonzalez-Diaz, G
Citation: S. Duenas et al., Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication, J MAT S-M E, 10(5-6), 1999, pp. 373-377
Authors:
Duenas, S
Castan, E
Barbolla, J
Kola, RR
Sullivan, PA
Citation: S. Duenas et al., Use of anodic tantalum pentoxide for high-density capacitor fabrication, J MAT S-M E, 10(5-6), 1999, pp. 379-384
Authors:
Quintanilla, L
Duenas, S
Castan, E
Pinacho, R
Pelaez, R
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of deep levels existing in fully implanted andrapid thermal annealed p(+)n InP junctions, J MAT S-M E, 10(5-6), 1999, pp. 413-418
Authors:
Quintanilla, L
Pinacho, R
Enriquez, L
Pelaez, R
Duenas, S
Castan, E
Bailon, L
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of He-ion implantation-induced deep levels in p(+)n InP junctions, J APPL PHYS, 86(9), 1999, pp. 4855-4860
Authors:
Pelaez, R
Castan, E
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: R. Pelaez et al., Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication, J APPL PHYS, 86(12), 1999, pp. 6924-6930
Authors:
Quintanilla, L
Pinacho, R
Enriquez, L
Pelaez, R
Duenas, S
Castan, E
Bailon, L
Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions, J APPL PHYS, 85(11), 1999, pp. 7978-7980
Risultati:
1-14
|