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Results: 1-16 |
Results: 16
GROWTH OF TWIN-FREE CDTE SINGLE-CRYSTALS IN A SEMICLOSED VAPOR-PHASE SYSTEM
Authors: LAASCH M KUNZ T EICHE C FIEDERLE M JOERGER W KLOESS G BENZ KW
Citation: M. Laasch et al., GROWTH OF TWIN-FREE CDTE SINGLE-CRYSTALS IN A SEMICLOSED VAPOR-PHASE SYSTEM, Journal of crystal growth, 174(1-4), 1997, pp. 696-707
CHARACTERIZATION OF CDTE-CL CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS BY TIME-DEPENDENT CHARGE MEASUREMENTS (TDCM)
Authors: EICHE C JOERGER W FIEDERLE M EBLING D SALK M SCHWARZ R BENZ KW
Citation: C. Eiche et al., CHARACTERIZATION OF CDTE-CL CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS BY TIME-DEPENDENT CHARGE MEASUREMENTS (TDCM), Journal of crystal growth, 166(1-4), 1996, pp. 245-250
RADIATION DETECTOR PROPERTIES OF CDTE0.9SE0.1 CL CRYSTALS GROWN UNDERMICROGRAVITY IN A ROTATING MAGNETIC-FIELD/
Authors: FIEDERLE M EICHE C JOERGER W SALK M SENCHENKOV AS EGOROV AV EBLING DG BENZ KW
Citation: M. Fiederle et al., RADIATION DETECTOR PROPERTIES OF CDTE0.9SE0.1 CL CRYSTALS GROWN UNDERMICROGRAVITY IN A ROTATING MAGNETIC-FIELD/, Journal of crystal growth, 166(1-4), 1996, pp. 256-260
STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES
Authors: LAASCH M KLOESS G KUNZ T SCHWARZ R GRASZA K EICHE C BENZ KW
Citation: M. Laasch et al., STRESS BIREFRINGENCE IN VAPOR-GROWN CDTE AND ITS CORRELATION TO THE GROWTH TECHNIQUES, Journal of crystal growth, 161(1-4), 1996, pp. 34-39
NONCONTACT CHARACTERIZATION OF CDTE DOPED WITH V OR TI
Authors: EICHE C JOERGER W SCHWARZ R BENZ KW
Citation: C. Eiche et al., NONCONTACT CHARACTERIZATION OF CDTE DOPED WITH V OR TI, Journal of crystal growth, 161(1-4), 1996, pp. 271-276
CHARACTERIZATION OF TI AND V DOPED CDTE BY TIME-DEPENDENT CHARGE MEASUREMENT (TDCM) AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS)
Authors: EICHE C JOERGER W FIEDERLE M EBLING D SCHWARZ R BENZ KW
Citation: C. Eiche et al., CHARACTERIZATION OF TI AND V DOPED CDTE BY TIME-DEPENDENT CHARGE MEASUREMENT (TDCM) AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS), Optical materials, 4(2-3), 1995, pp. 214-218
CLOSED TUBE VAPOR GROWTH OF CDTE-V AND CDTE-TI AND ITS CHARACTERIZATION
Authors: SCHWARZ R JOERGER W EICHE C FIEDERLE M BENZ KW
Citation: R. Schwarz et al., CLOSED TUBE VAPOR GROWTH OF CDTE-V AND CDTE-TI AND ITS CHARACTERIZATION, Journal of crystal growth, 146(1-4), 1995, pp. 92-97
INVESTIGATION OF CDTE-CL GROWN FROM THE VAPOR-PHASE UNDER MICROGRAVITY CONDITIONS WITH TIME-DEPENDENT CHARGE MEASUREMENTS AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY
Authors: EICHE C JOERGER W FIEDERLE M EBLING D SCHWARZ R BENZ KW
Citation: C. Eiche et al., INVESTIGATION OF CDTE-CL GROWN FROM THE VAPOR-PHASE UNDER MICROGRAVITY CONDITIONS WITH TIME-DEPENDENT CHARGE MEASUREMENTS AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY, Journal of crystal growth, 146(1-4), 1995, pp. 98-103
CHARACTERIZATION OF CADMIUM TELLURIDE CRYSTALS GROWN BY DIFFERENT TECHNIQUES FROM THE VAPOR-PHASE
Authors: LAASCH M SCHWARZ R JOERGER W EICHE C FIEDERLE M BENZ KW GRASZA K
Citation: M. Laasch et al., CHARACTERIZATION OF CADMIUM TELLURIDE CRYSTALS GROWN BY DIFFERENT TECHNIQUES FROM THE VAPOR-PHASE, Journal of crystal growth, 146(1-4), 1995, pp. 125-129
STUDIES OF THE COMPENSATION MECHANISM IN CDTE GROWN FROM THE VAPOR-PHASE
Authors: FIEDERLE M EBLING D EICHE C HUG P JOERGER W LAASCH M SCHWARZ R SALK M BENZ KW
Citation: M. Fiederle et al., STUDIES OF THE COMPENSATION MECHANISM IN CDTE GROWN FROM THE VAPOR-PHASE, Journal of crystal growth, 146(1-4), 1995, pp. 142-147
HIGH-RESOLUTION METHOD FOR THE ANALYSIS OF ADMITTANCE SPECTROSCOPY DATA
Authors: MAIER D HUG P FIEDERLE M EICHE C EBLING D WEESE J
Citation: D. Maier et al., HIGH-RESOLUTION METHOD FOR THE ANALYSIS OF ADMITTANCE SPECTROSCOPY DATA, Journal of applied physics, 77(8), 1995, pp. 3851-3857
COMPARISON OF CDTE, CD0.9ZN0.1TE AND CDTE0.9SE0.1 CRYSTALS - APPLICATION FOR GAMMA-RAY AND X-RAY-DETECTORS
Authors: FIEDERLE M EBLING D EICHE C HOFMANN DM SALK M STADLER W BENZ KW MEYER BK
Citation: M. Fiederle et al., COMPARISON OF CDTE, CD0.9ZN0.1TE AND CDTE0.9SE0.1 CRYSTALS - APPLICATION FOR GAMMA-RAY AND X-RAY-DETECTORS, Journal of crystal growth, 138(1-4), 1994, pp. 529-533
INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT
Authors: EICHE C MAIER D WEESE J HONERKAMP J BENZ KW
Citation: C. Eiche et al., INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT, Journal of applied physics, 75(2), 1994, pp. 1242-1242
GROWTH OF BULK LEAD DIIODIDE CRYSTALS FROM THE VAPOR-PHASE
Authors: ECKSTEIN J ERLER B EICHE C BENZ KW
Citation: J. Eckstein et al., GROWTH OF BULK LEAD DIIODIDE CRYSTALS FROM THE VAPOR-PHASE, Journal of crystal growth, 131(3-4), 1993, pp. 453-456
STATE AND DISTRIBUTION OF POINT-DEFECTS IN DOPED AND UNDOPED BRIDGMAN-GROWN CDTE SINGLE-CRYSTALS (VOL 128, PG 593, 1993)
Authors: ZIMMERMANN H BOYN R RUDOLPH P ALBERS C BENZ KW SINERIUS D EICHE C MEYER BK HOFFMANN DM
Citation: H. Zimmermann et al., STATE AND DISTRIBUTION OF POINT-DEFECTS IN DOPED AND UNDOPED BRIDGMAN-GROWN CDTE SINGLE-CRYSTALS (VOL 128, PG 593, 1993), Journal of crystal growth, 131(1-2), 1993, pp. 276-276
INVESTIGATION OF COMPENSATION DEFECTS IN CDTE-CL SAMPLES GROWN BY DIFFERENT TECHNIQUES
Authors: EICHE C MAIER D SINERIUS D WEESE J BENZ KW HONERKAMP J
Citation: C. Eiche et al., INVESTIGATION OF COMPENSATION DEFECTS IN CDTE-CL SAMPLES GROWN BY DIFFERENT TECHNIQUES, Journal of applied physics, 74(11), 1993, pp. 6667-6670
Risultati: 1-16 |