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Results: 1-25 | 26-35
Results: 1-25/35
THE DEVELOPMENT OF A FACILITY FOR HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS AT THE AUSTRALIAN-NATIONAL-UNIVERSITY
Authors: TIMMERS H ELLIMAN RG PALMER GR OPHEL TR OCONNOR DJ
Citation: H. Timmers et al., THE DEVELOPMENT OF A FACILITY FOR HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS AT THE AUSTRALIAN-NATIONAL-UNIVERSITY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 611-615
LIMITATIONS TO DEPTH RESOLUTION IN HIGH-ENERGY, HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS
Authors: ELLIMAN RG TIMMERS H PALMER GR OPHEL TR
Citation: Rg. Elliman et al., LIMITATIONS TO DEPTH RESOLUTION IN HIGH-ENERGY, HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 649-653
STRAIN AND DEFECT MICROSTRUCTURE IN ION-IRRADIATED GESI SI STRAINED LAYERS AS A FUNCTION OF ANNEALING TEMPERATURE/
Authors: GLASKO JM ELLIMAN RG ZOU J COCKAYNE DJH GERALD JDF
Citation: Jm. Glasko et al., STRAIN AND DEFECT MICROSTRUCTURE IN ION-IRRADIATED GESI SI STRAINED LAYERS AS A FUNCTION OF ANNEALING TEMPERATURE/, Applied physics letters, 73(6), 1998, pp. 838-840
THE EFFECT OF ION IRRADIATION ON THE THERMAL-STABILITY OF GESI SI STRAINED-LAYER HETEROSTRUCTURES/
Authors: GLASKO JM ELLIMAN RG FITZGERALD JD KRINGHOJ P
Citation: Jm. Glasko et al., THE EFFECT OF ION IRRADIATION ON THE THERMAL-STABILITY OF GESI SI STRAINED-LAYER HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 397-400
LIGHT-ION INDUCED DAMAGE IN CDTE AND HG(1-X)CD(X)TE EPITAXIAL THIN-FILMS
Authors: RUSSO SP JOHNSTON PN ELLIMAN RG JAMIESON DN
Citation: Sp. Russo et al., LIGHT-ION INDUCED DAMAGE IN CDTE AND HG(1-X)CD(X)TE EPITAXIAL THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 218-222
ELECTRICAL EVALUATION OF AL-P(-GEXSI1-X OHMIC CONTACTS())
Authors: JIANG H ELLIMAN RG
Citation: H. Jiang et Rg. Elliman, ELECTRICAL EVALUATION OF AL-P(-GEXSI1-X OHMIC CONTACTS()), Journal of applied physics, 80(5), 1996, pp. 3110-3114
ELECTRICAL-PROPERTIES OF GESI SURFACE-CHANNEL AND BURIED-CHANNEL P-MOSFETS FABRICATED BY GE IMPLANTATION
Authors: JIANG H ELLIMAN RG
Citation: H. Jiang et Rg. Elliman, ELECTRICAL-PROPERTIES OF GESI SURFACE-CHANNEL AND BURIED-CHANNEL P-MOSFETS FABRICATED BY GE IMPLANTATION, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 97-103
KINETIC ROUGHENING AND SMOOTHING OF THE CRYSTALLINE-AMORPHOUS INTERFACE DURING SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GESI ALLOY LAYERS
Authors: ELLIMAN RG WONG WC
Citation: Rg. Elliman et Wc. Wong, KINETIC ROUGHENING AND SMOOTHING OF THE CRYSTALLINE-AMORPHOUS INTERFACE DURING SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GESI ALLOY LAYERS, Applied physics letters, 69(18), 1996, pp. 2677-2679
USING DOPING SUPERLATTICES TO STUDY TRANSIENT-ENHANCED DIFFUSION OF BORON IN REGROWN SILICON
Authors: JONES KS ELLIMAN RG PETRAVIC MM KRINGHOJ P
Citation: Ks. Jones et al., USING DOPING SUPERLATTICES TO STUDY TRANSIENT-ENHANCED DIFFUSION OF BORON IN REGROWN SILICON, Applied physics letters, 68(22), 1996, pp. 3111-3113
DIFFUSION OF SON IMPLANTED BORON IN PREAMORPHIZED SILICON
Authors: JONES KS ZHANG LH KRISHNAMOORTHY V LAW M SIMMONS DS CHI P RUBIN L ELLIMAN RG
Citation: Ks. Jones et al., DIFFUSION OF SON IMPLANTED BORON IN PREAMORPHIZED SILICON, Applied physics letters, 68(19), 1996, pp. 2672-2674
PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON
Authors: WONGLEUNG J WILLIAMS JS ELLIMAN RG NYGREN E EAGLESHAM DJ JACOBSON DC POATE JM
Citation: J. Wongleung et al., PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 253-256
ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS
Authors: KRINGHOJ P GLASKO JM ELLIMAN RG
Citation: P. Kringhoj et al., ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 276-280
HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF INP-BASED MATERIALS AND DEVICES
Authors: RIDGWAY MC ELLIMAN RG FAITH ME KEMENY PC DAVIES M
Citation: Mc. Ridgway et al., HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF INP-BASED MATERIALS AND DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 323-326
AMORPHIZATION OF SILICON BY ELEVATED-TEMPERATURE ION IRRADIATION
Authors: GOLDBERG RD WILLIAMS JS ELLIMAN RG
Citation: Rd. Goldberg et al., AMORPHIZATION OF SILICON BY ELEVATED-TEMPERATURE ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 242-247
ELEVATED-TEMPERATURE GE IMPLANTATION INTO SI AND THE EFFECT OF SUBSEQUENT THERMAL ANNEALING
Authors: WONG WC ELLIMAN RG
Citation: Wc. Wong et Rg. Elliman, ELEVATED-TEMPERATURE GE IMPLANTATION INTO SI AND THE EFFECT OF SUBSEQUENT THERMAL ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 271-276
RECRYSTALLIZATION OF RELAXED SIGE ALLOY LAYERS
Authors: KRINGHOJ P ELLIMAN RG FYHN M SHIRYAEV SY LARSEN AN
Citation: P. Kringhoj et al., RECRYSTALLIZATION OF RELAXED SIGE ALLOY LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 346-349
CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA
Authors: LEECH PW FAITH M KEMENY PC RIDGWAY MC ELLIMAN RG REEVES GK ZHOU W
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 442-446
GETTERING OF COPPER TO HYDROGEN-INDUCED CAVITIES IN SILICON
Authors: WONGLEUNG J ASCHERON CE PETRAVIC M ELLIMAN RG WILLIAMS JS
Citation: J. Wongleung et al., GETTERING OF COPPER TO HYDROGEN-INDUCED CAVITIES IN SILICON, Applied physics letters, 66(10), 1995, pp. 1231-1233
P-TYPE DOPING OF GAAS BY CARBON IMPLANTATION
Authors: JIANG H ELLIMAN RG WILLIAMS JS
Citation: H. Jiang et al., P-TYPE DOPING OF GAAS BY CARBON IMPLANTATION, Journal of electronic materials, 23(4), 1994, pp. 391-396
HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF MICROELECTRONIC DEVICES
Authors: RIDGWAY MC ELLINGBOE SL ELLIMAN RG WILLIAMS JS
Citation: Mc. Ridgway et al., HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF MICROELECTRONIC DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 290-297
THE ROLE OF STRAIN IN THE CRYSTALLIZATION OF GE IMPLANTED (100) SI
Authors: ELLIMAN RG WONG WC
Citation: Rg. Elliman et Wc. Wong, THE ROLE OF STRAIN IN THE CRYSTALLIZATION OF GE IMPLANTED (100) SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 178-182
AMORPHIZATION DURING ELEVATED-TEMPERATURE IMPLANTATION
Authors: CARTER G NOBES MJ ELLIMAN RG
Citation: G. Carter et al., AMORPHIZATION DURING ELEVATED-TEMPERATURE IMPLANTATION, Vacuum, 45(12), 1994, pp. 1197-1203
SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF STRAIN-RELAXED SI1-XGEX ALLOY LAYERS
Authors: KRINGHOJ P ELLIMAN RG
Citation: P. Kringhoj et Rg. Elliman, SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF STRAIN-RELAXED SI1-XGEX ALLOY LAYERS, Physical review letters, 73(6), 1994, pp. 858-861
INVESTIGATION OF PT TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION/
Authors: SREENIVAS K REANEY I MAEDER T SETTER N JAGADISH C ELLIMAN RG
Citation: K. Sreenivas et al., INVESTIGATION OF PT TI BILAYER METALLIZATION ON SILICON FOR FERROELECTRIC THIN-FILM INTEGRATION/, Journal of applied physics, 75(1), 1994, pp. 232-239
DIFFUSION OF ION-IMPLANTED SN IN SI, SI1-XGEX, AND GE
Authors: KRINGHOJ P ELLIMAN RG
Citation: P. Kringhoj et Rg. Elliman, DIFFUSION OF ION-IMPLANTED SN IN SI, SI1-XGEX, AND GE, Applied physics letters, 65(3), 1994, pp. 324-326
Risultati: 1-25 | 26-35