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Results: 1-10 |
Results: 10
INTEGRATED HFETS AND HFET LASERS UTILIZING CARBON DOPING
Authors: EVALDSSON PA TAYLOR GW MICOVIC M MALIK R JIANG SJ
Citation: Pa. Evaldsson et al., INTEGRATED HFETS AND HFET LASERS UTILIZING CARBON DOPING, IEEE photonics technology letters, 8(3), 1996, pp. 370-372
AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS
Authors: KIELY PA DOCTER DP VANG TA TAYLOR GW EVALDSSON PA CLAISSE PR TELL B BROWNGOEBELER KF
Citation: Pa. Kiely et al., AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS, IEE proceedings. Circuits, devices and systems, 142(2), 1995, pp. 105-108
INVERSION CHANNEL VERTICAL-CAVITY DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH LASERS
Authors: EVALDSSON PA TAYLOR GW COOKE P JIANG S
Citation: Pa. Evaldsson et al., INVERSION CHANNEL VERTICAL-CAVITY DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH LASERS, Electronics Letters, 31(11), 1995, pp. 920-921
TEMPERATURE-DEPENDENT OPERATION OF THE VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: TAYLOR GW EVALDSSON PA
Citation: Gw. Taylor et Pa. Evaldsson, TEMPERATURE-DEPENDENT OPERATION OF THE VERTICAL-CAVITY SURFACE-EMITTING LASER, IEEE journal of quantum electronics, 30(10), 1994, pp. 2262-2270
SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR
Authors: KIELY PA VANG TA MICOVIC M LEPORE A TAYLOR GW MALIK R DOCTER DP EVALDSSON PA CLAISSE PR BROWNGOEBELER KF STORZ F
Citation: Pa. Kiely et al., SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR, Electronics Letters, 30(6), 1994, pp. 529-531
A HIGH-EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING SWITCHING LASER FABRICATED WITH POSTGROWTH CAVITY MODE POSITIONING
Authors: EVALDSSON PA TAYLOR GW COOKE PW SARGOOD SK KIELY PA DOCTER DP
Citation: Pa. Evaldsson et al., A HIGH-EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING SWITCHING LASER FABRICATED WITH POSTGROWTH CAVITY MODE POSITIONING, IEEE photonics technology letters, 5(6), 1993, pp. 634-636
LASING OSCILLATIONS IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OFTHE DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH
Authors: SARGOOD SK DOCTER DP EVALDSSON PA TAYLOR GW
Citation: Sk. Sargood et al., LASING OSCILLATIONS IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OFTHE DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH, IEEE photonics technology letters, 5(5), 1993, pp. 497-499
COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS
Authors: KIELY PA TAYLOR GW DOCTER DP EVALDSSON PA VANG TA TELL B BROWNGOEBELER KF
Citation: Pa. Kiely et al., COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS, IEE proceedings. Part G. Circuits, devices and systems, 140(4), 1993, pp. 279-284
INVERSION CHANNEL HFET WITH UNITY CURRENT GAIN FREQUENCY OF 14GHZ ANDSURFACE-EMITTING LASER FROM A SINGLE EPITAXIAL-GROWTH
Authors: KIELY PA EVALDSSON PA COOKE P TAYLOR GW
Citation: Pa. Kiely et al., INVERSION CHANNEL HFET WITH UNITY CURRENT GAIN FREQUENCY OF 14GHZ ANDSURFACE-EMITTING LASER FROM A SINGLE EPITAXIAL-GROWTH, Electronics Letters, 29(17), 1993, pp. 1521-1523
MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY
Authors: EVALDSSON PA VANG TA TAYLOR GW SARGOOD SK KIELY PA COOKE P
Citation: Pa. Evaldsson et al., MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY, Electronics Letters, 29(1), 1993, pp. 60-62
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