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Results: 1-22 |
Results: 22
Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Kokhanovskii, SI Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, TECH PHYS L, 27(1), 2001, pp. 9-10
Surface gettering of background impurities and defects in GaAs wafers
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Surface gettering of background impurities and defects in GaAs wafers, SEMICONDUCT, 35(2), 2001, pp. 177-180
Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure
Authors: Emtsev, VV Ammerlaan, CAJ Andreev, BA Emtsev, VV Oganesyan, GA Misiuk, A Londos, CA
Citation: Vv. Emtsev et al., Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure, J MAT S-M E, 12(4-6), 2001, pp. 223-225
Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon
Authors: Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Kimerling, LC
Citation: Vv. Emtsev et al., Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 74-76
Sergei Petrovich Solov'ev (1932-2000)
Authors: Brudnyi, VN Bublik, VT Goshitskii, BN Emtsev, VV Kazanskii, YA Konopleva, RF Konobeev, YV Kolin, NG Kuz'min, II Mil'vidskii, MG Ozerov, RP Osvenskii, VB Plotnikov, VG Simonov, AP Smirnov, LS Kharchenko, VA
Citation: Vn. Brudnyi et al., Sergei Petrovich Solov'ev (1932-2000), SEMICONDUCT, 34(12), 2000, pp. 1410-1411
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Sobolev, NA Shek, EI Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, SEMICONDUCT, 33(6), 1999, pp. 603-605
In memory of Vadim Fedorovich Masterov
Authors: Alferov, ZI Vasil'ev, YS Zabrodskii, AG Zakharchenya, BP Ipatova, IP Kesamanly, FP Kozlovskii, VV Kolgatin, VN Perel', VI Emtsev, VV Ammerlaan, J Pizzini, S
Citation: Zi. Alferov et al., In memory of Vadim Fedorovich Masterov, SEMICONDUCT, 33(6), 1999, pp. 704-705
Effect of gamma irradiation on the photoluminescence kinetics of porous silicon
Authors: Agekyan, VF Stepanov, YA Emtsev, VV Lebedev, AA Poloskin, DS Remenyuk, AD
Citation: Vf. Agekyan et al., Effect of gamma irradiation on the photoluminescence kinetics of porous silicon, SEMICONDUCT, 33(12), 1999, pp. 1315-1317
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium, SEMICONDUCT, 33(10), 1999, pp. 1084-1087
Behavior of electrically active point defects in irradiated MOCVD n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104
Electron irradiation of heavily doped silicon: group-III impurity ion pairs
Authors: Emtsev, VV Ehrhart, P Poloskin, DS Dedek, U
Citation: Vv. Emtsev et al., Electron irradiation of heavily doped silicon: group-III impurity ion pairs, PHYSICA B, 274, 1999, pp. 287-290
An infrared investigation of the 887 cm(-1) band in Cz-Si
Authors: Fytros, LG Georgiou, GJ Londos, CA Emtsev, VV
Citation: Lg. Fytros et al., An infrared investigation of the 887 cm(-1) band in Cz-Si, PHYSICA B, 274, 1999, pp. 312-316
Impurity effects in silicon implanted with rare-earth ions
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity effects in silicon implanted with rare-earth ions, PHYSICA B, 274, 1999, pp. 346-349
Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Cherkashin, NA Emtsev, VV
Citation: Mm. Sobolev et al., Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots, PHYSICA B, 274, 1999, pp. 959-962
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides
Authors: Shmidt, NM Emtsev, VV Kryzhanovsky, AS Kyutt, RN Lundin, WV Poloskin, DS Ratnikov, VV Sakharov, AV Titkov, AN Usikov, AS Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
Phonons in hexagonal InN. Experiment and theory
Authors: Davydov, VY Klochikhin, AA Smirnov, MB Emtsev, VV Petrikov, VD Abroyan, IA Titov, AI Goncharuk, IN Smirnov, AN Mamutin, VV Ivanov, SV Inushima, T
Citation: Vy. Davydov et al., Phonons in hexagonal InN. Experiment and theory, PHYS ST S-B, 216(1), 1999, pp. 779-783
Mg-doped hexagonal InN/Al2O3 films grown by MBE
Authors: Mamutin, VV Vekshin, VA Davydov, VY Ratnikov, VV Kudriavtsev, YA Ber, BY Emtsev, VV Ivanov, SV
Citation: Vv. Mamutin et al., Mg-doped hexagonal InN/Al2O3 films grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 373-378
Experimental and theoretical studies of phonons in hexagonal InN
Authors: Davydov, VY Emtsev, VV Goncharuk, IN Smirnov, AN Petrikov, VD Mamutin, VV Vekshin, VA Ivanov, SV Smirnov, MB Inushima, T
Citation: Vy. Davydov et al., Experimental and theoretical studies of phonons in hexagonal InN, APPL PHYS L, 75(21), 1999, pp. 3297-3299
A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA
Citation: Vv. Emtsev et al., A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon, J LUMINESC, 80(1-4), 1998, pp. 391-394
Risultati: 1-22 |