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Results: 1-25/54
Authors:
RUJIRAWAT S
SMITH DJ
FAURIE JP
NEU G
NATHAN V
SIVANANTHAN S
Citation: S. Rujirawat et al., MICROSTRUCTURAL AND OPTICAL CHARACTERIZATION OF CDTE(211)B ZNTE/SI(211) GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(9), 1998, pp. 1047-1052
Authors:
SPORKEN R
MALENGREAU F
GHIJSEN J
CAUDANO R
SIVANANTHAN S
FAURIE JP
VANGEMMEREN T
JOHNSON RL
Citation: R. Sporken et al., SI 2P CORE-LEVEL SHIFTS AT THE CDTE SI(100) INTERFACE/, Applied surface science, 123, 1998, pp. 462-466
Authors:
BOUSQUET V
TOURNIE E
FAURIE JP
Citation: V. Bousquet et al., DEFECT DENSITY IN ZNSE PSEUDOMORPHIC LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON TO VARIOUS GAAS BUFFER LAYERS, Journal of crystal growth, 192(1-2), 1998, pp. 102-108
Authors:
FAURIE JP
BOUSQUET V
BRUNET P
TOURNIE E
Citation: Jp. Faurie et al., HETEROEPITAXIAL GROWTH OF BEXZN1-XSE ON SI(001) AND GAAS(001) SUBSTRATES, Journal of crystal growth, 185, 1998, pp. 11-15
Authors:
NEU G
MORHAIN C
TOURNIE E
FAURIE JP
Citation: G. Neu et al., THE PHOSPHORUS ACCEPTOR IN ZNSE, Journal of crystal growth, 185, 1998, pp. 515-519
Authors:
TOURNIE E
MORHAIN C
NEU G
FAURIE JP
Citation: E. Tournie et al., THE NITROGEN-RELATED SHALLOW DONOR IN ZNSE-N EPITAXIAL LAYERS, Journal of crystal growth, 185, 1998, pp. 520-524
Authors:
MORHAIN C
BROWNLIE GD
TOURNIE E
MASI A
ONGARETTO C
PRIOR KA
FAURIE JP
CAVENETT BC
Citation: C. Morhain et al., A STUDY OF LUMINESCENCE THERMAL QUENCHING IN ZNCDSE ZNSSE QUANTUM-WELLS FOR THE OPTIMAL-DESIGN OF BLUE LASER STRUCTURES/, Journal of crystal growth, 185, 1998, pp. 591-595
Authors:
GUENAUD C
DELEPORTE E
FILORAMO A
LELONG P
DELALANDE C
MORHAIN C
TOURNIE E
FAURIE JP
Citation: C. Guenaud et al., BAND-OFFSET DETERMINATION OF THE ZN1-XCDXSE ZNSE INTERFACE/, Journal of crystal growth, 185, 1998, pp. 839-843
Authors:
CHAUVET C
VENNEGUES P
BRUNET P
TOURNIE E
FAURIE JP
Citation: C. Chauvet et al., HETEROEPITAXIAL GROWTH OF BESE ON VICINAL SI(001) SURFACES, Applied physics letters, 73(7), 1998, pp. 957-959
Authors:
TOURNIE E
BOUSQUET V
FAURIE JP
Citation: E. Tournie et al., MOLECULAR-BEAM EPITAXY OF BETE LAYERS ON GAAS SUBSTRATES STUDIED VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Applied physics letters, 72(22), 1998, pp. 2859-2861
Authors:
XIN Y
PENNYCOOK SJ
BROWNING ND
NELLIST PD
SIVANANTHAN S
OMNES F
BEAUMONT B
FAURIE JP
GIBART P
Citation: Y. Xin et al., DIRECT OBSERVATION OF THE CORE STRUCTURES OF THREADING DISLOCATIONS IN GAN, Applied physics letters, 72(21), 1998, pp. 2680-2682
Authors:
TOURNIE E
ONGARETTO C
LAUGT M
FAURIE JP
Citation: E. Tournie et al., CRITICAL THICKNESS OF ZN1-XCDXSE ZNSE HETEROSTRUCTURES GROWN ON RELAXED ZNSE BUFFER LAYERS ON BARE GAAS SUBSTRATES/, Applied physics letters, 72(2), 1998, pp. 217-219
Authors:
TOURNIE E
MORHAIN C
ONGARETTO C
BOUSQUET V
BRUNET P
NEU G
FAURIE JP
TRIBOULET R
NDAP JO
Citation: E. Tournie et al., ISSUES IN MOLECULAR-BEAM EPITAXY OF ZNSE-BASED HETEROSTRUCTURES FOR BLUE-GREEN LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 21-28
Authors:
TEISSEYRE H
LESZCZYNSKI M
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
PAKULA K
ROBERT JL
BEAUMONT B
GIBART P
VAILLE M
FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
Authors:
TOURNIE E
MORHAIN C
NEU G
FAURIE JP
Citation: E. Tournie et al., SELF-COMPENSATION IN NITROGEN-DOPED ZNSE, Physical review. B, Condensed matter, 56(4), 1997, pp. 1657-1660
Authors:
DELEPORTE E
GUENAUD C
FILORAMO A
MARTINEZPASTOR J
ROUSSIGNOL P
DELALANDE C
BATOVSKI D
MORHAIN C
TOURNIE E
FAURIE JP
Citation: E. Deleporte et al., EXCITON RELAXATION DYNAMICS IN (ZN,CD)SE ZNSE QUANTUM-WELL/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 217-220
Authors:
VENNEGUES P
MULLER B
BOUSQUET V
ONGARETTO C
TOURNIE E
FAURIE JP
Citation: P. Vennegues et al., MICROSTRUCTURAL STUDY OF PSEUDOMORPHIC ZNSE FILMS GROWN ON BARE GAAS SUBSTRATES, Journal of crystal growth, 182(1-2), 1997, pp. 45-52
Authors:
GREIN CH
FAURIE JP
BOUSQUET V
TOURNIE E
BENEDEK R
DELARUBIA T
Citation: Ch. Grein et al., SIMULATIONS OF ZNSE GAAS HETEROEPITAXIAL GROWTH/, Journal of crystal growth, 178(3), 1997, pp. 258-267
Authors:
TOURNIE E
BRUNET P
ONGARETTO C
MORHAIN C
FAURIE JP
TRIBOULET R
NDAP JO
Citation: E. Tournie et al., ZNSE HOMOEPITAXIAL GROWTH ON SOLID-PHASE RECRYSTALLIZED SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 577-582
Authors:
WIJEWARNASURIYA PS
AQARIDEN F
GREIN CH
FAURIE JP
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et al., P-TYPE DOPING WITH ARSENIC IN (211)B HGCDTE GROWN BY MBE, Journal of crystal growth, 175, 1997, pp. 647-652
Authors:
BOUSQUET V
ONGARETTO C
LAUGT M
BEHRINGER M
TOURNIE E
FAURIE JP
Citation: V. Bousquet et al., (001)GAAS SUBSTRATE PREPARATION FOR DIRECT ZNSE HETEROEPITAXY, Journal of applied physics, 81(10), 1997, pp. 7012-7017
Authors:
BOUSQUET V
TOURNIE E
LAUGT M
VENNEGUES P
FAURIE JP
Citation: V. Bousquet et al., STRUCTURAL AND OPTICAL-PROPERTIES OF LATTICE-MATCHED ZNBESE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ONTO GAAS SUBSTRATES, Applied physics letters, 70(26), 1997, pp. 3564-3566
Authors:
WIJEWARNASURIYA PS
YOO SS
FAURIE JP
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et al., P-TYPE DOPING WITH ARSENIC IN (211)B HGCDTE GROWN BY MBE, Journal of electronic materials, 25(8), 1996, pp. 1300-1305
Authors:
YOO SS
RODRICKS B
SIVANANTHAN S
FAURIE JP
MONTANO PA
Citation: Ss. Yoo et al., SYNCHROTRON X-RAY PHOTOCONDUCTOR DETECTOR ARRAYS MADE ON MBE GROWN CDTE, Journal of electronic materials, 25(8), 1996, pp. 1306-1311
Authors:
ALMEIDA LA
CHEN YP
FAURIE JP
SIVANANTHAN S
SMITH DJ
TSEN SCY
Citation: La. Almeida et al., GROWTH OF HIGH-QUALITY CDTE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 25(8), 1996, pp. 1402-1405