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Results: 26-47/47
Authors:
BRUIJN JD
SEELEN JL
FEENSTRA RM
HANSEN BE
BERNOSKI FP
Citation: Jd. Bruijn et al., FAILURE OF THE MECRING SCREW-RING ACETABULAR COMPONENT IN TOTAL HIP-ARTHROPLASTY - A 3-YEAR TO 7-YEAR FOLLOW-UP-STUDY, Journal of bone and joint surgery. American volume, 77A(5), 1995, pp. 760-766
Authors:
FEENSTRA RM
LUTZ MA
Citation: Rm. Feenstra et Ma. Lutz, SCATTERING FROM STRAIN VARIATIONS IN HIGH-MOBILITY SI SIGE HETEROSTRUCTURES/, Journal of applied physics, 78(10), 1995, pp. 6091-6097
Authors:
LUTZ MA
FEENSTRA RM
CHU JO
Citation: Ma. Lutz et al., ATOMIC-FORCE MICROSCOPY STUDIES OF SIGE FILMS AND SI SIGE HETEROSTRUCTURES/, IBM journal of research and development, 39(6), 1995, pp. 629-637
Authors:
LUTZ MA
FEENSTRA RM
LEGOUES FK
MOONEY PM
CHU JO
Citation: Ma. Lutz et al., INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS (VOL 66, PG 724, 1995), Applied physics letters, 67(5), 1995, pp. 724-724
Authors:
MOONEY PM
JORDANSWEET JL
ISMAIL K
CHU JO
FEENSTRA RM
LEGOUES FK
Citation: Pm. Mooney et al., RELAXED SI0.7GE0.3 BUFFER LAYERS FOR HIGH-MOBILITY DEVICES, Applied physics letters, 67(16), 1995, pp. 2373-2375
Authors:
LUTZ MA
FEENSTRA RM
LEGOUES FK
MOONEY PM
CHU JO
Citation: Ma. Lutz et al., INFLUENCE OF MISFIT DISLOCATIONS ON THE SURFACE-MORPHOLOGY OF SI1-XGEX FILMS, Applied physics letters, 66(6), 1995, pp. 724-726
Authors:
WANG MW
COLLINS DA
MCGILL TC
GRANT RW
FEENSTRA RM
Citation: Mw. Wang et al., EFFECT OF INTERFACE COMPOSITION AND GROWTH ORDER ON THE MIXED ANION INAS GASB VALENCE-BAND OFFSET/, Applied physics letters, 66(22), 1995, pp. 2981-2983
Authors:
FEENSTRA RM
COLLINS DA
TING DZY
WANG MW
MCGILL TC
Citation: Rm. Feenstra et al., SCANNING-TUNNELING-MICROSCOPY OF INAS GASB SUPERLATTICES - SUBBANDS, INTERFACE ROUGHNESS, AND INTERFACE ASYMMETRY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2592-2597
Authors:
FEENSTRA RM
COLLINS DA
MCGILL TC
Citation: Rm. Feenstra et al., SCANNING-TUNNELING-MICROSCOPY OF INAS GASB SUPERLATTICES WITH VARIOUSGROWTH-CONDITIONS/, Superlattices and microstructures, 15(2), 1994, pp. 215-220
Authors:
FEENSTRA RM
Citation: Rm. Feenstra, CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ILL-V SEMICONDUCTOR STRUCTURES, Semiconductor science and technology, 9(12), 1994, pp. 2157-2168
Authors:
FEENSTRA RM
Citation: Rm. Feenstra, TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS, Physical review. B, Condensed matter, 50(7), 1994, pp. 4561-4570
Authors:
LUTZ MA
FEENSTRA RM
MOONEY PM
TERSOFF J
CHU JO
Citation: Ma. Lutz et al., FACET FORMATION IN STRAINED SI1-XGEX FILMS, Surface science, 316(3), 1994, pp. 120001075-120001080
Authors:
FEENSTRA RM
Citation: Rm. Feenstra, SCANNING TUNNELING SPECTROSCOPY, Surface science, 300(1-3), 1994, pp. 965-979
Authors:
FEENSTRA RM
COLLINS DA
TING DZY
WANG MW
MCGILL TC
Citation: Rm. Feenstra et al., INTERFACE ROUGHNESS AND ASYMMETRY IN INAS GASB SUPERLATTICES STUDIED BY SCANNING-TUNNELING-MICROSCOPY/, Physical review letters, 72(17), 1994, pp. 2749-2752
Authors:
JOHNSON MB
ALBREKTSEN O
FEENSTRA RM
SALEMINK HW
Citation: Mb. Johnson et al., DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY (VOL 63, PG 2923, 1993), Applied physics letters, 64(11), 1994, pp. 1454-1454
Authors:
VATERLAUS A
FEENSTRA RM
KIRCHNER PD
WOODALL JM
PETTIT GD
Citation: A. Vaterlaus et al., CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF EPITAXIAL GAAS STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1502-1508
Authors:
PASHLEY MD
HABERERN KW
FEENSTRA RM
KIRCHNER PD
Citation: Md. Pashley et al., DIFFERENT FERMI-LEVEL PINNING BEHAVIOR ON N-TYPE AND P-TYPE GAAS(001), Physical review. B, Condensed matter, 48(7), 1993, pp. 4612-4615
Authors:
HELD GA
GOODSTEIN DM
FEENSTRA RM
RAMSTAD MJ
NOH DY
BIRGENEAU RJ
Citation: Ga. Held et al., PINNED AND UNPINNED STEP DYNAMICS ON VICINAL SILVER (110) SURFACES, Physical review. B, Condensed matter, 48(11), 1993, pp. 8458-8461
Authors:
FEENSTRA RM
WOODALL JM
PETTIT GD
Citation: Rm. Feenstra et al., OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS, Physical review letters, 71(8), 1993, pp. 1176-1179
Authors:
KIRCHNER PD
VATERLAUS A
FEENSTRA RM
LIN CL
PETTIT GD
WOODALL JM
Citation: Pd. Kirchner et al., SOLUBILITY-LIMIT ACTIVATION OF SI DOPING AT MBE GAAS PN JUNCTIONS OBSERVED BY CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Journal of crystal growth, 127(1-4), 1993, pp. 1030-1031
Authors:
JOHNSON MB
ALBREKTSEN O
FEENSTRA RM
SALEMINK HWM
Citation: Mb. Johnson et al., DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 63(21), 1993, pp. 2923-2925
Authors:
FEENSTRA RM
VATERLAUS A
WOODALL JM
PETTIT GD
Citation: Rm. Feenstra et al., TUNNELING SPECTROSCOPY OF MIDGAP STATES INDUCED BY ARSENIC PRECIPITATES IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 63(18), 1993, pp. 2528-2530