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Results: 1-25/27
Authors:
WITZIGMANN B
REGLI P
FICHTNER W
Citation: B. Witzigmann et al., RIGOROUS ELECTROMAGNETIC SIMULATION OF LIQUID-CRYSTAL DISPLAYS, Journal of the Optical Society of America. A, Optics, image science,and vision., 15(3), 1998, pp. 753-757
Authors:
YODER PD
KRUMBEIN U
GARTNER K
SASAKI N
FICHTNER W
Citation: Pd. Yoder et al., STATISTICAL ENHANCEMENT OF TERMINAL CURRENT ESTIMATION FOR MONTE-CARLO DEVICE SIMULATION, VLSI design (Print), 6(1-4), 1998, pp. 303-306
Authors:
KORNER TO
FICHTNER W
Citation: To. Korner et W. Fichtner, GRID INTERPOLATION AT MATERIAL BOUNDARIES IN FINITE-DIFFERENCE TIME-DOMAIN METHODS, Microwave and optical technology letters (Print), 19(5), 1998, pp. 368-370
Authors:
FICHTNER W
KADEN H
SCHINDLER W
Citation: W. Fichtner et al., ONLINE MONITORING OF LUBRICATING OILS FOR COMBUSTION ENGINES USING ELECTRICAL SENSORS, TM. Technisches Messen, 65(2), 1998, pp. 53-57
COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES
Authors:
SUZUKI K
SUDO R
TADA Y
TOMOTANI M
FEUDEL T
FICHTNER W
Citation: K. Suzuki et al., COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES, Solid-state electronics, 42(9), 1998, pp. 1671-1678
Authors:
SCHONBACHLER E
LECOHIER B
FICHTNER W
Citation: E. Schonbachler et al., INFLUENCE OF ALSITI GRAIN-BOUNDARIES ON THE PLASMA ETCH RATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2011-2015
Authors:
OMURA I
OHASHI H
FICHTNER W
Citation: I. Omura et al., IGBT NEGATIVE GATE CAPACITANCE AND RELATED INSTABILITY EFFECTS, IEEE electron device letters, 18(12), 1997, pp. 622-624
Authors:
WIETSCHEL M
FICHTNER W
RENTZ O
Citation: M. Wietschel et al., INTEGRATION OF PRICE-DEPENDING DEMAND REACTIONS IN AN OPTIMIZING ENERGY EMISSION MODEL FOR THE DEVELOPMENT OF CO2-MITIGATION STRATEGIES, European journal of operational research, 102(3), 1997, pp. 432-444
Authors:
YODER PD
GARTNER K
KRUMBEIN U
FICHTNER W
Citation: Pd. Yoder et al., OPTIMIZED TERMINAL CURRENT CALCULATION FOR MONTE-CARLO DEVICE SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 16(10), 1997, pp. 1082-1087
Authors:
KORNER TO
FICHTNER W
Citation: To. Korner et W. Fichtner, AUXILIARY DIFFERENTIAL-EQUATION - EFFICIENT IMPLEMENTATION IN THE FINITE-DIFFERENCE TIME-DOMAIN METHOD, Optics letters, 22(21), 1997, pp. 1586-1588
Authors:
ZIMMERMANN R
FICHTNER W
Citation: R. Zimmermann et W. Fichtner, LOW-POWER LOGIC STYLES - CMOS VERSUS PASS-TRANSISTOR LOGIC, IEEE journal of solid-state circuits, 32(7), 1997, pp. 1079-1090
Authors:
ZOSEL J
FICHTNER W
KADEN H
RAU B
Citation: J. Zosel et al., CORROSION MONITORING WITH ELECTROCHEMICAL SENSORS BY USING EVOLUTION-INSPIRED OPTIMIZATION TECHNIQUES, Werkstoffe und Korrosion, 47(6), 1996, pp. 299-306
Authors:
STRICKER A
GLOOR D
FICHTNER W
Citation: A. Stricker et al., LAYOUT OPTIMIZATION OF AN ESD-PROTECTION N-MOSFET BY SIMULATION AND MEASUREMENT, Journal of electrostatics, 38(1-2), 1996, pp. 73-92
Authors:
REGLI P
LAMBOGLIA K
GARRETON G
NEERACHER M
WESTERMANN M
STRECKER N
FICHTNER W
Citation: P. Regli et al., MULTIDIMENSIONAL GEOMETRIC MODELING FOR 3D TCAD, Microelectronic engineering, 34(1), 1996, pp. 101-115
Authors:
RYTER R
ZINGG R
FICHTNER W
Citation: R. Ryter et al., OPTIMIZING HIGH-VOLTAGE BIPOLAR-TRANSISTORS IN A SMART-POWER COMPLEMENTARY BICMOS TECHNOLOGY, Solid-state electronics, 39(8), 1996, pp. 1185-1191
Authors:
YODER PD
GARTNER K
FICHTNER W
Citation: Pd. Yoder et al., A GENERALIZED RAMO-SHOCKLEY THEOREM FOR CLASSICAL TO QUANTUM TRANSPORT AT ARBITRARY FREQUENCIES, Journal of applied physics, 79(4), 1996, pp. 1951-1954
Authors:
KADEN H
FICHTNER W
SCHMIDT K
Citation: H. Kaden et al., THE LIQUID-JUNCTION POTENTIAL ON THE DIAP HRAGM OF REFERENCE ELECTRODES, Journal fur praktische Chemie, Chemiker-Zeitung, 337(1), 1995, pp. 18-22
Authors:
RICCOBENE C
GARTNER K
WACHUTKA G
BALTES H
FICHTNER W
Citation: C. Riccobene et al., FULL 3-DIMENSIONAL NUMERICAL-ANALYSIS OF MULTI-COLLECTOR MAGNETOTRANSISTORS WITH DIRECTIONAL SENSITIVITY, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 289-293
Authors:
WISKAMP V
FICHTNER W
KRAMB V
NINTSCHEW A
SCHNEIDER JS
Citation: V. Wiskamp et al., INFRARED-SPECTROSCOPY - A VERSATILE TOOL IN PRACTICAL CHEMISTRY COURSES, Journal of chemical education, 72(10), 1995, pp. 952-954
Authors:
HOFLER A
FEUDEL T
STRECKER N
FICHTNER W
STEGEMANN KH
SYHRE H
DALLMANN G
Citation: A. Hofler et al., A TECHNOLOGY ORIENTED MODEL FOR TRANSIENT DIFFUSION AND ACTIVATION OFBORON IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3671-3679
Authors:
ARDONE A
FICHTNER W
TSAI W
WIETSCHEL M
RENTZ O
Citation: A. Ardone et al., CONTRIBUTION OF THE COMBINED HEAT AND POW ER PROCESS TO THE CO2 REDUCTION IN COMPARISON WITH OTHER OPTIONS, Brennstoff-Warme-Kraft, 47(6), 1995, pp. 247-254
Authors:
POMMERELL C
FICHTNER W
Citation: C. Pommerell et W. Fichtner, MEMORY ASPECTS AND PERFORMANCE OF ITERATIVE SOLVERS, SIAM journal on scientific computing, 15(2), 1994, pp. 460-473
Authors:
SCHENK A
KRUMBEIN U
MULLER S
DETTMER H
FICHTNER W
Citation: A. Schenk et al., ON THE ORIGIN OF TUNNELING CURRENTS IN SCALED SILICON DEVICES, IEICE transactions on electronics, E77C(2), 1994, pp. 148-154
Authors:
LENDENMANN H
FICHTNER W
ROSLING M
BLEICHNER H
NORDLANDER E
Citation: H. Lendenmann et al., 2-D CHARACTERIZATION OF DYNAMIC CHARGE-DISTRIBUTION IN MOS CONTROLLEDTHYRISTORS - EXPERIMENT AND SIMULATION, IEEE electron device letters, 15(6), 1994, pp. 221-223
Authors:
FICHTNER W
KADEN H
HERRMANN S
Citation: W. Fichtner et al., CALIBRATION OF ELECTROCHEMICAL SENSORS BY MEANS OF GENETIC ALGORITHMS, TM. Technisches Messen, 61(11), 1994, pp. 432-438