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Results:
1-14
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Results: 14
Authors:
FIEGNA C
ABRAMO A
Citation: C. Fiegna et A. Abramo, ANALYSIS OF QUANTUM EFFECTS IN NONUNIFORMLY DOPED MOS STRUCTURES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 877-880
Authors:
OHGURO T
YAMADA K
SUGIYAMA N
IMAI S
USUDA K
YOSHITOMI T
FIEGNA C
ONO M
SAITO M
MOMOSE HS
KATSUMATA Y
IWAI H
Citation: T. Ohguro et al., 0.15-MU-M BURIED-CHANNEL P-MOSFETS WITH ULTRATHIN BORON-DOPED EPITAXIAL SI LAYER, I.E.E.E. transactions on electron devices, 45(3), 1998, pp. 717-721
ELECTRON-ENERGY DISTRIBUTIONS IN SILICON STRUCTURES AT LOW APPLIED VOLTAGES AND HIGH ELECTRIC-FIELDS
Authors:
ABRAMO A
FIEGNA C
Citation: A. Abramo et C. Fiegna, ELECTRON-ENERGY DISTRIBUTIONS IN SILICON STRUCTURES AT LOW APPLIED VOLTAGES AND HIGH ELECTRIC-FIELDS, Journal of applied physics, 80(2), 1996, pp. 889-893
Authors:
ONO M
SAITO M
YOSHITOMI T
FIEGNA C
OHGURO T
MOMOSE HS
IWAI H
Citation: M. Ono et al., FABRICATION OF SUB-50-NM GATE LENGTH N-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND THEIR ELECTRICAL CHARACTERISTICS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1740-1743
Authors:
ONO M
SAITO M
YOSHITOMI T
FIEGNA C
OHGURO T
MOMOSE HS
IWAI H
Citation: M. Ono et al., A STUDY ON HOT-CARRIER EFFECTS ON N-MOSFETS UNDER HIGH SUBSTRATE IMPURITY CONCENTRATION, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1510-1521
Authors:
ONO M
SAITO M
YOSHITOMI T
FIEGNA C
OHGURO T
IWAI H
Citation: M. Ono et al., A 40 NM GATE LENGTH N-MOSFET, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1822-1830
Authors:
TSUBOI Y
FIEGNA C
SANGIORGI E
RICCO B
WADA T
KATSUMATA Y
IWAI H
Citation: Y. Tsuboi et al., MONTE-CARLO ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN BIPOLAR-DEVICESWITH AND WITHOUT AN I-LAYER, IEICE transactions on electronics, E77C(2), 1994, pp. 174-178
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
SELMI L
FIEGNA C
BEZ R
Citation: L. Selmi et al., CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1677-1679
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE - REPLY, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1681-1683
Authors:
FIEGNA C
IWAI H
WADA T
SAITO M
SANGIORGI E
RICCO B
Citation: C. Fiegna et al., SCALING THE MOS-TRANSISTOR BELOW 0.1 MU-M - METHODOLOGY, DEVICE STRUCTURES, AND TECHNOLOGY REQUIREMENTS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 941-951
Authors:
FIEGNA C
SANGIORGI E
Citation: C. Fiegna et E. Sangiorgi, DETERMINATION OF SPACE-DEPENDENT ELECTRON-DISTRIBUTION FUNCTION BY COMBINED USE OF ENERGY AND BOLTZMANN TRANSPORT-EQUATIONS - IMPROVEMENT, EVALUATION, AND EXPLANATION - REPLY, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2369-2370
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2018-2022
Authors:
ABRAMO A
VENTURI F
SANGIORGI E
FIEGNA C
RICCO B
BRUNETTI R
QUADE W
JACOBONI C
Citation: A. Abramo et al., A MULTIBAND MODEL FOR HOLE TRANSPORT IN SILICON AT HIGH-ENERGIES, Semiconductor science and technology, 7(3B), 1992, pp. 597-600
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