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Results: 1-12 |
Results: 12
PROCEEDINGS OF 17TH-NORDIC-SEMICONDUCTOR-MEETING - TRONDHEIM, NORWAY,JUNE 17-20, 1996 - PREFACE
Authors: CHAO KA BORG A FIMLAND BO FJELDLY TA
Citation: Ka. Chao et al., PROCEEDINGS OF 17TH-NORDIC-SEMICONDUCTOR-MEETING - TRONDHEIM, NORWAY,JUNE 17-20, 1996 - PREFACE, Physica scripta. T, T69, 1997, pp. 5-5
FIELD-EFFECT TRANSISTOR MODELING ISSUES
Authors: FJELDLY TA SHUR MS YTTERDAL T
Citation: Ta. Fjeldly et al., FIELD-EFFECT TRANSISTOR MODELING ISSUES, Physica scripta. T, T69, 1997, pp. 30-39
A CHARGE CONSERVING CAPACITANCE MODEL FOR GAAS-MESFETS FOR CAD APPLICATIONS
Authors: NAWAZ M FJELDLY TA
Citation: M. Nawaz et Ta. Fjeldly, A CHARGE CONSERVING CAPACITANCE MODEL FOR GAAS-MESFETS FOR CAD APPLICATIONS, Physica scripta. T, T69, 1997, pp. 242-246
UNIFIED SUBSTRATE CURRENT MODEL FOR MOSFETS
Authors: INIGUEZ B FJELDLY TA
Citation: B. Iniguez et Ta. Fjeldly, UNIFIED SUBSTRATE CURRENT MODEL FOR MOSFETS, Solid-state electronics, 41(1), 1997, pp. 87-94
A NEW CHARGE CONSERVING CAPACITANCE MODEL FOR GAAS-MESFETS
Authors: NAWAZ M FJELDLY TA
Citation: M. Nawaz et Ta. Fjeldly, A NEW CHARGE CONSERVING CAPACITANCE MODEL FOR GAAS-MESFETS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1813-1821
UNIFIED PHYSICAL I-V MODEL OF FULLY DEPLETED SOI MOSFETS FOR ANALOG-DIGITAL CIRCUIT SIMULATION/
Authors: CHENG YH FJELDLY TA
Citation: Yh. Cheng et Ta. Fjeldly, UNIFIED PHYSICAL I-V MODEL OF FULLY DEPLETED SOI MOSFETS FOR ANALOG-DIGITAL CIRCUIT SIMULATION/, Solid-state electronics, 39(5), 1996, pp. 721-730
UNIFIED PHYSICAL I-V MODEL INCLUDING SELF-HEATING EFFECT FOR FULLY DEPLETED SOI MOSFETS/
Authors: CHENG YH FJELDLY TA
Citation: Yh. Cheng et Ta. Fjeldly, UNIFIED PHYSICAL I-V MODEL INCLUDING SELF-HEATING EFFECT FOR FULLY DEPLETED SOI MOSFETS/, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1291-1296
NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS
Authors: YTTERDAL T KIM SH LEE K FJELDLY TA
Citation: T. Ytterdal et al., NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 362-365
ENHANCED GAAS-MESFET CAD MODEL FOR A WIDE-RANGE OF TEMPERATURES
Authors: YTTERDAL T MOON BJ FJELDLY TA SHUR MS
Citation: T. Ytterdal et al., ENHANCED GAAS-MESFET CAD MODEL FOR A WIDE-RANGE OF TEMPERATURES, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1724-1734
UNIFIED CAPACITANCE MODELING OF MOSFETS
Authors: JOHANNESSEN OG FJELDLY TA YTTERDAL T
Citation: Og. Johannessen et al., UNIFIED CAPACITANCE MODELING OF MOSFETS, Physica scripta. T, 54, 1994, pp. 128-130
EXTRINSIC VERSUS INTRINSIC MODELS FOR FETS
Authors: YTTERDAL T FJELDLY TA LEE K
Citation: T. Ytterdal et al., EXTRINSIC VERSUS INTRINSIC MODELS FOR FETS, Physica scripta. T, 54, 1994, pp. 139-140
SUB-0.1-MU-M MOSFET MODELING AND CIRCUIT SIMULATION
Authors: YTTERDAL T SHUR MS FJELDLY TA
Citation: T. Ytterdal et al., SUB-0.1-MU-M MOSFET MODELING AND CIRCUIT SIMULATION, Electronics Letters, 30(18), 1994, pp. 1545-1546
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