AAAAAA
Results:
1-16
|
Results: 16
Authors:
ELSTNER L
CONRAD E
ESCHRICH H
FUSSEL W
FLIETNER H
Citation: L. Elstner et al., HETEROJUNCTIONS IN PHOTOVOLTAIC APPLICATIONS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 79-90
Authors:
ANGERMANN H
KLIEFOTH K
FLIETNER H
Citation: H. Angermann et al., PREPARATION OF H-TERMINATED SI SURFACES AND THEIR CHARACTERIZATION BYMEASURING THE SURFACE-STATE DENSITY, Applied surface science, 104, 1996, pp. 107-112
Authors:
FLIETNER H
FUSSEL W
SINH ND
ANGERMANN H
Citation: H. Flietner et al., DENSITY-OF-STATES AND RELAXATION SPECTRA OF ETCHED, H-TERMINATED AND NATURALLY OXIDIZED SI-SURFACES AND THE ACCOMPANIED DEFECTS, Applied surface science, 104, 1996, pp. 342-348
Authors:
FUSSEL W
SCHMIDT M
ANGERMANN H
MENDE G
FLIETNER H
Citation: W. Fussel et al., DEFECTS AT THE SI SIO2 INTERFACE - THEIR NATURE AND BEHAVIOR IN TECHNOLOGICAL PROCESSES AND STRESS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 177-183
Authors:
TIMOSHENKO VY
KASHKAROV PK
MATVEEVA AB
KONSTANTINOVA EA
FLIETNER H
DITTRICH T
Citation: Vy. Timoshenko et al., INFLUENCE OF PHOTOLUMINESCENCE AND TRAPPING ON THE PHOTOVOLTAGE AT THE POR-SI P-SI STRUCTURE/, Thin solid films, 276(1-2), 1996, pp. 216-218
Authors:
ANGERMANN H
KLIEFOTH K
FUSSEL W
FLIETNER H
Citation: H. Angermann et al., DEFECT GENERATION AT SILICON SURFACES DURING ETCHING AND INITIAL-STAGE OF OXIDATION, Microelectronic engineering, 28(1-4), 1995, pp. 51-54
Authors:
DITTRICH T
FLIETNER H
TIMOSHENKO VY
KASHKAROV PK
Citation: T. Dittrich et al., INFLUENCE OF THE OXIDATION PROCESS ON THE LUMINESCENCE OF HF-TREATED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 149-151
Authors:
LISOVSKII IP
LITOVCHENKO VG
LOZINSKII VB
FROLOV SI
FLIETNER H
FUSSEL W
SCHMIDT EG
Citation: Ip. Lisovskii et al., IR STUDY OF SHORT-RANGE AND LOCAL ORDER IN SIO2 AND SIOX FILMS, Journal of non-crystalline solids, 187, 1995, pp. 91-95
Authors:
DITTRICH T
RAUSCHER S
BITZER T
AGGOUR M
FLIETNER H
LEWERENZ HJ
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF N-SI(111) DURING ELECTROCHEMICAL SURFACE TRANSFORMATION TOWARD H-TERMINATION, Journal of the Electrochemical Society, 142(7), 1995, pp. 2411-2413
Authors:
DITTRICH T
RAUSCHER S
TIMOSHENKO VY
RAPPICH J
SIEBER I
FLIETNER H
LEWERENZ HJ
Citation: T. Dittrich et al., ULTRATHIN LUMINESCENT NANOPOROUS SILICON ON N-SI - PH DEPENDENT PREPARATION IN AQUEOUS NH4F SOLUTIONS, Applied physics letters, 67(8), 1995, pp. 1134-1136
Authors:
RAUSCHER S
DITTRICH T
AGGOUR M
RAPPICH J
FLIETNER H
LEWERENZ HJ
Citation: S. Rauscher et al., REDUCED INTERFACE STATE DENSITY AFTER PHOTOCURRENT OSCILLATIONS AND ELECTROCHEMICAL HYDROGENATION OF N-SI(111) - A SURFACE PHOTOVOLTAGE INVESTIGATION, Applied physics letters, 66(22), 1995, pp. 3018-3020
Authors:
ANGERMANN H
DITTRICH T
FLIETNER H
Citation: H. Angermann et al., INVESTIGATION OF NATIVE-OXIDE GROWTH ON HF-TREATED SI(111) SURFACES BY MEASURING THE SURFACE-STATE DISTRIBUTION, Applied physics. A, Solids and surfaces, 59(2), 1994, pp. 193-197
Authors:
KRANKENHAGEN R
SCHMIDT M
HENRION W
SIEBER I
SELLE B
FLIETNER H
Citation: R. Krankenhagen et al., OPTICAL AND PHOTOELECTRICAL PROPERTIES OF MU-C-SI LAYERS AND THE INFLUENCE OF SUBSEQUENT HYDROGENATION, Physica status solidi. a, Applied research, 145(2), 1994, pp. 401-406
Authors:
MENDE G
FENSKE F
FLIETNER H
JESKE M
SCHULTZE JW
Citation: G. Mende et al., LOCALIZED ANODIC OXIDE-FILMS ON SI - PREPARATION AND PROPERTIES, Electrochimica acta, 39(8-9), 1994, pp. 1259-1264
Authors:
DITTRICH T
ANGERMANN H
FLIETNER H
BITZER T
LEWERENZ HJ
Citation: T. Dittrich et al., SURFACE ELECTRONIC-PROPERTIES OF ELECTROLYTICALLY HYDROGEN-TERMINATEDSI(111), Journal of the Electrochemical Society, 141(12), 1994, pp. 3595-3599
Authors:
DITTRICH T
ANGERMANN H
FUSSEL W
FLIETNER H
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THEINITIAL OXIDATION IN AIR, Physica status solidi. a, Applied research, 140(2), 1993, pp. 463-470
Risultati:
1-16
|