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Results:
1-21
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Results: 21
Authors:
FORNARI R
ZAPPETTINI A
BAGNOLI G
TADDIA M
BATTAGLIARIN M
Citation: R. Fornari et al., INCORPORATION AND ELECTRICAL-ACTIVITY OF FE IN LEC INP, Semiconductor science and technology, 13(5), 1998, pp. 512-516
Authors:
DUBECKY F
FORNARI R
DARMO J
PIKNA M
GOMBIA E
KREMPASKY M
PELFER PG
SEKACOVA M
HUDEK P
RUCEK M
Citation: F. Dubecky et al., ELECTRICAL AND DETECTION PROPERTIES OF PARTICLE DETECTORS BASED ON LEC SEMIINSULATING INP, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 408(2-3), 1998, pp. 491-495
Authors:
TADDIA M
RANNO D
FORNARI R
Citation: M. Taddia et al., DETERMINATION OF CADMIUM IN INDIUM-PHOSPHIDE BY ELECTROTHERMAL ATOMIC-ABSORPTION SPECTROMETRY AND ION-SELECTIVE ELECTRODE POTENTIOMETRY, Fresenius' journal of analytical chemistry, 359(7-8), 1997, pp. 533-537
Authors:
ZAPPETTINI A
FORNARI R
CAPELLETTI R
Citation: A. Zappettini et al., ELECTRICAL AND OPTICAL-PROPERTIES OF SEMIINSULATING INP OBTAINED BY WAFER AND INGOT ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 147-151
Authors:
FORNARI R
GILIOLI E
SENTIRI A
MIGNONI G
AVELLA M
JIMENEZ J
ALVAREZ A
GONZALEZ MA
Citation: R. Fornari et al., HOMOGENEITY OF THERMALLY ANNEALED FE-DOPED INP WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 233-237
Authors:
FORNARI R
GILIOLI E
MIGNONI G
MASI M
Citation: R. Fornari et al., A STUDY OF CONVECTION, STRIATIONS AND INTERFACE SHAPE IN INP CRYSTALSGROWN BY THE DOUBLE-CRUCIBLE LEC TECHNIQUE, Crystal research and technology, 32(8), 1997, pp. 1085-1093
Authors:
FORNARI R
THIRUMAVALAVAN M
GILIOLI E
SENTIRI A
ZAPPETTINI A
MIGNONI G
ZUCCALLI G
Citation: R. Fornari et al., GROWTH OF SEMIINSULATING INP WITH UNIFORM AXIAL FE DOPING BY A DOUBLE-CRUCIBLE LEC TECHNIQUE, Journal of crystal growth, 179(1-2), 1997, pp. 57-66
Authors:
AVELLA M
JIMENEZ J
ALVAREZ A
FORNARI R
GILIOLI E
SENTIRI A
Citation: M. Avella et al., UNIFORMITY AND PHYSICAL-PROPERTIES OF SEMIINSULATING FE-DOPED INP AFTER WAFER OR INGOT ANNEALING, Journal of applied physics, 82(8), 1997, pp. 3836-3845
Authors:
FORNARI R
ZAPPETTINI A
GOMBIA E
MOSCA R
CHERKAOUI K
MARRAKCHI G
Citation: R. Fornari et al., CONDUCTIVITY CONVERSION OF LIGHTLY FE-DOPED INP INDUCED BY THERMAL ANNEALING - A METHOD FOR SEMIINSULATING MATERIAL PRODUCTION, Journal of applied physics, 81(11), 1997, pp. 7604-7611
Authors:
FORNARI R
GILIOLI E
MORIGLIONI M
THIRUMAVALAVAN M
ZAPPETTINI A
Citation: R. Fornari et al., A STUDY OF IRON INCORPORATION IN LEG-GROWN INDIUM-PHOSPHIDE, Journal of crystal growth, 166(1-4), 1996, pp. 572-577
Authors:
MONCIARDINI M
PARETI L
TURILLI G
FORNARI R
PAOLUZI A
ALBERTINI F
MOZE O
CALESTANI G
Citation: M. Monciardini et al., MAGNETIC-PROPERTIES OF FE-3(GA1-XSBX)(2), Journal of magnetism and magnetic materials, 144, 1995, pp. 145-146
Authors:
TADDIA M
BELLINI A
FORNARI R
Citation: M. Taddia et al., DETERMINATION OF TELLURIUM IN INDIUM-PHOSPHIDE BY ELECTROTHERMAL ATOMIC-ABSORPTION SPECTROMETRY AND ULTRAVIOLET-VISIBLE SPECTROPHOTOMETRY, Journal of analytical atomic spectrometry, 10(6), 1995, pp. 433-437
Authors:
FORNARI R
WEYHER JL
KRAWCZYK S
NUBAN F
CORBEL C
TORNQVIST M
Citation: R. Fornari et al., PROPERTIES OF THERMALLY ANNEALED UNDOPED AND SULFUR DOPED INP WAFERS, Materials science and technology, 11(11), 1995, pp. 1223-1228
Authors:
LEBERRE C
CORBEL C
SAARINEN K
KUISMA S
HAUTOJARVI P
FORNARI R
Citation: C. Leberre et al., EVIDENCE OF 2 KINDS OF ACCEPTORS IN UNDOPED SEMIINSULATING GAAS - POSITRON TRAPPING AT GALLIUM VACANCIES AND NEGATIVE-IONS, Physical review. B, Condensed matter, 52(11), 1995, pp. 8112-8120
Authors:
LEBERRE C
CORBEL C
MIH R
BROZEL MR
TUZEMEN S
KUISMA S
SAARINEN K
HAUTOJARVI P
FORNARI R
Citation: C. Leberre et al., NEAR-BAND-EDGE ABSORPTION AND POSITRON TRAPPING UNDER ILLUMINATION INSEMIINSULATING GAAS - ROLE OF AS VACANCIES, Applied physics letters, 66(19), 1995, pp. 2534-2536
Authors:
FORNARI R
Citation: R. Fornari, PAPERS PRESENTED AT THE 2ND INTERNATIONAL WORKSHOP ON EXPERT EVALUATION AND CONTROL OF COMPOUND SEMICONDUCTOR-MATERIALS AND TECHNOLOGIES, 18-20-MAY-1994, PARMA, ITALY - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 13-13
Authors:
FORNARI R
BRINCIOTTI A
GOMBIA E
MOSCA R
SENTIRI A
Citation: R. Fornari et al., PREPARATION AND CHARACTERIZATION OF SEMIINSULATING UNDOPED INDIUM-PHOSPHIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 95-100
Authors:
FRIGERI C
FERRARI C
FORNARI R
WEYHER JL
LONGO F
GUADALUPI GM
Citation: C. Frigeri et al., STRUCTURAL CHARACTERIZATION OF HEAVILY ZN-DOPED LIQUID ENCAPSULATED CZOCHRALSKI INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 120-125
Authors:
WEYHER JL
FORNARI R
GOROG T
Citation: Jl. Weyher et al., HBR-K2CR2O7-H2O ETCHING SYSTEM FOR INDIUM-PHOSPHIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 488-492
Authors:
WEYHER JL
FORNARI R
GOROG T
KELLY JJ
ERNE B
Citation: Jl. Weyher et al., HBR-K2CR2O7-H2O ETCHING SYSTEM FOR INDIUM-PHOSPHIDE, Journal of crystal growth, 141(1-2), 1994, pp. 57-67
Authors:
FORNARI R
BRINCIOTTI A
SENTIRI A
GOROG T
CURTI M
ZUCCALLI G
Citation: R. Fornari et al., PRESSURE OF PHOSPHORUS IN EQUILIBRIUM WITH SOLID INP AT DIFFERENT TEMPERATURES, Journal of applied physics, 75(5), 1994, pp. 2406-2409
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1-21
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