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Results: 1-25/38
Authors:
Legge, M
Bacher, G
Bader, S
Kummell, T
Forchel, A
Nurnberger, J
Schumacher, C
Faschinger, W
Landwehr, G
Citation: M. Legge et al., Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors, J VAC SCI B, 19(3), 2001, pp. 692-694
Authors:
Puls, J
Mikhailov, GV
Schwertfeger, S
Yakovlev, DR
Henneberger, F
Faschinger, W
Citation: J. Puls et al., High-excitation effects in the optical properties of delta-doped ZnSe quantum wells, PHYS ST S-B, 227(2), 2001, pp. 331-337
Authors:
Suris, RA
Kochereshko, VP
Astakhov, GV
Yakovlev, DR
Ossau, W
Nurnberger, J
Faschinger, W
Landwehr, G
Wojtowicz, T
Karczewski, G
Kossut, J
Citation: Ra. Suris et al., Excitons and trions modified by interaction with a two-dimensional electron gas, PHYS ST S-B, 227(2), 2001, pp. 343-352
Authors:
Rupprecht, R
Pascher, H
Krenn, H
Faschinger, W
Bauer, G
Citation: R. Rupprecht et al., Coherent Raman spectroscopy of CdTe/MnTe short-period superlattices - art.no. 115325, PHYS REV B, 6311(11), 2001, pp. 5325
Authors:
Schott, GM
Faschinger, W
Molenkamp, LW
Citation: Gm. Schott et al., Lattice constant variation and complex formation in zincblende gallium manganese arsenide, APPL PHYS L, 79(12), 2001, pp. 1807-1809
Authors:
Gleim, T
Heske, C
Umbach, E
Schumacher, C
Faschinger, W
Ammon, C
Probst, M
Steinruck, HP
Citation: T. Gleim et al., Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer, APPL PHYS L, 78(13), 2001, pp. 1867-1869
Authors:
Astakhov, GV
Kochereshko, VP
Yakovlev, DR
Ossau, W
Nurnberger, J
Faschinger, W
Landwehr, G
Citation: Gv. Astakhov et al., Oscillator strength of trion states in ZnSe-based quantum wells, PHYS REV B, 62(15), 2000, pp. 10345-10352
Authors:
Droge, H
Nagelstrasser, M
Nurnberger, J
Faschinger, W
Fleszar, A
Steinruck, HP
Citation: H. Droge et al., The electronic band structure of ZnSe(100), SURF SCI, 454, 2000, pp. 477-482
Authors:
Yakovlev, DR
Puls, J
Mikhailov, GV
Astakhov, GV
Kochereshko, VP
Ossau, W
Nurnberger, J
Faschinger, W
Henneberger, F
Landwehr, G
Citation: Dr. Yakovlev et al., Charged exciton dynamics in ZnSe/ZnMgSSe QWs, PHYS ST S-A, 178(1), 2000, pp. 501-505
Authors:
Gundel, S
Albert, D
Nurnberger, J
Faschinger, W
Citation: S. Gundel et al., Ab initio energy calculation of nitrogen-related defects in ZnSe, J CRYST GR, 214, 2000, pp. 474-477
Authors:
Schumacher, C
Faschinger, W
Citation: C. Schumacher et W. Faschinger, Self-organized nucleation of sharply defined nanostructures during growth into shadow masks, J CRYST GR, 214, 2000, pp. 732-736
Authors:
Yakovlev, DR
Nickel, HA
McCombe, BD
Keller, A
Astakhov, GV
Kochereshko, VP
Ossau, W
Nurnberger, J
Faschinger, W
Landwehr, G
Citation: Dr. Yakovlev et al., Magneto-optics of charged excitons in ZnSe/ZnMgSSe quantum wells, J CRYST GR, 214, 2000, pp. 823-826
Authors:
Haase, B
Neukirch, U
Meinertz, J
Gutowski, J
Axt, VM
Bartels, G
Stahl, A
Nurnberger, J
Faschinger, W
Citation: B. Haase et al., Intensity dependence of signals obtained in four-wave-mixing geometry: influence of higher-order contributions, J CRYST GR, 214, 2000, pp. 852-855
Authors:
Haase, B
Neukirch, U
Gutowski, J
Nurnberger, J
Faschinger, W
Behringer, M
Hommel, D
Axt, VM
Bartels, G
Stahl, A
Citation: B. Haase et al., Line shape of four-wave-mixing signals: dependence on sample geometry and excitation conditions, J CRYST GR, 214, 2000, pp. 856-861
Authors:
Gerhard, T
Albert, D
Faschinger, W
Citation: T. Gerhard et al., High-resolution X-ray diffraction study of degrading ZnSe-based laser diodes, J CRYST GR, 214, 2000, pp. 1049-1053
Authors:
Faschinger, W
Ehinger, M
Schallenberg, T
Citation: W. Faschinger et al., High-sensitivity p-i-n-detectors for the visible spectral range based on wide-gap II-VI materials, J CRYST GR, 214, 2000, pp. 1138-1141
Authors:
Worschech, L
Ossau, W
Nurnberger, J
Faschinger, W
Landwehr, G
Citation: L. Worschech et al., Optical characterization of relaxation processes in nitrogen-doped ZnSe layers, APPL PHYS L, 77(26), 2000, pp. 4301-4303
Authors:
Faschinger, W
Nurnberger, J
Citation: W. Faschinger et J. Nurnberger, Green II-VI light emitting diodes with long lifetime on InP substrate, APPL PHYS L, 77(2), 2000, pp. 187-189
Authors:
Faschinger, W
Schumacher, C
Citation: W. Faschinger et C. Schumacher, Molecular beam epitaxy growth over shadow edges: a new method for in situ growth of nanostructures, SEMIC SCI T, 14(3), 1999, pp. 289-292
Authors:
Gundel, S
Albert, D
Nurnberger, J
Faschinger, W
Citation: S. Gundel et al., Stability of nitrogen in ZnSe and its role in the degradation of ZnSe lasers, PHYS REV B, 60(24), 1999, pp. R16271-R16274
Authors:
Astakhov, GV
Yakovlev, DR
Kochereshko, VP
Ossau, W
Nurnberger, J
Faschinger, W
Landwehr, G
Citation: Gv. Astakhov et al., Charged excitons in ZnSe-based quantum wells, PHYS REV B, 60(12), 1999, pp. R8485-R8488
Authors:
Gundel, S
Faschinger, W
Citation: S. Gundel et W. Faschinger, First-principles simulation of Se and Te adsorbed on GaAs(001), PHYS REV B, 59(8), 1999, pp. 5602-5611
Authors:
Herz, K
Bacher, G
Forchel, A
Straub, H
Brunthaler, G
Faschinger, W
Bauer, G
Vieu, C
Citation: K. Herz et al., Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization, PHYS REV B, 59(4), 1999, pp. 2888-2893
Authors:
Gundel, S
Fleszar, A
Faschinger, W
Hanke, W
Citation: S. Gundel et al., Atomic and electronic structure of the CdTe(001) surface: LDA and GW calculations, PHYS REV B, 59(23), 1999, pp. 15261-15269
Authors:
Li, M
Faschinger, W
Landwehr, G
Mai, ZH
Citation: M. Li et al., Comment on "Uniqueness of the complex diffraction amplitude in x-ray Braggdiffraction", PHYS REV B, 59(22), 1999, pp. 14781-14783