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Results:
1-17
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Results: 17
Authors:
Ferguson, IT
Thompson, AG
Barnett, SA
Long, FH
Feng, ZC
Citation: It. Ferguson et al., Epitaxial film growth and characterization, THIN FILM, 28, 2001, pp. 1-69
Authors:
Perunovic, B
Halfpenny, CA
Renowden, SA
Ferguson, IT
Love, S
Citation: B. Perunovic et al., An unusual complication of ADEM, NEUROP AP N, 27(2), 2001, pp. 139-141
Authors:
Wraback, M
Shen, H
Carrano, JC
Collins, CJ
Campbell, JC
Dupuis, RD
Schurman, MJ
Ferguson, IT
Citation: M. Wraback et al., Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN, APPL PHYS L, 79(9), 2001, pp. 1303-1305
Authors:
Zhou, QY
Manasreh, MO
Pophristic, M
Guo, S
Ferguson, IT
Citation: Qy. Zhou et al., Observation of nitrogen vacancy in proton-irradiated AlxGa1-xN, APPL PHYS L, 79(18), 2001, pp. 2901-2903
Authors:
Pophristic, M
Long, FH
Tran, C
Ferguson, IT
Citation: M. Pophristic et al., Time-resolved spectroscopy of InGaN, MRS I J N S, 5, 2000, pp. NIL_691-NIL_696
Authors:
Ferguson, IT
Norman, AG
Seong, TY
Citation: It. Ferguson et al., Relationship between the lateral length and thickness of the platelets in naturally occurring strained layer superlattice structures, J APPL PHYS, 88(10), 2000, pp. 5733-5736
Authors:
Yang, B
Li, T
Heng, K
Collins, C
Wang, S
Carrano, JC
Dupuis, RD
Campbell, JC
Schurman, MJ
Ferguson, IT
Citation: B. Yang et al., Low dark current GaN avalanche photodiodes, IEEE J Q EL, 36(12), 2000, pp. 1389-1391
Authors:
Yang, B
Heng, K
Li, T
Collins, CJ
Wang, S
Dupuis, RD
Campbell, JC
Schurman, MJ
Ferguson, IT
Citation: B. Yang et al., 32 x 32 ultraviolet Al0.1Ga0.9N/GaN p-i-n photodetector array, IEEE J Q EL, 36(11), 2000, pp. 1229-1231
Authors:
Crowdy, KA
Hollands, MA
Ferguson, IT
Marple-Horvat, DE
Citation: Ka. Crowdy et al., Evidence for interactive locomotor and oculomotor deficits in cerebellar patients during visually guided stepping, EXP BRAIN R, 135(4), 2000, pp. 437-454
Authors:
Wraback, M
Shen, H
Carrano, JC
Li, T
Campbell, JC
Schurman, MJ
Ferguson, IT
Citation: M. Wraback et al., Time-resolved electroabsorption measurement of the electron velocity-fieldcharacteristic in GaN, APPL PHYS L, 76(9), 2000, pp. 1155-1157
Authors:
Pophristic, M
Long, FH
Schurman, M
Ramer, J
Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, PHYS ST S-B, 216(1), 1999, pp. 803-806
Authors:
Burton, JC
Sun, L
Long, FH
Feng, ZC
Ferguson, IT
Citation: Jc. Burton et al., First- and second-order Raman scattering from semi-insulating 4H-SiC, PHYS REV B, 59(11), 1999, pp. 7282-7284
Authors:
Burton, JC
Long, FH
Ferguson, IT
Citation: Jc. Burton et al., Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide, J APPL PHYS, 86(4), 1999, pp. 2073-2077
Authors:
Pophristic, M
Long, FH
Tran, C
Ferguson, IT
Karlicek, RF
Citation: M. Pophristic et al., Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes, J APPL PHYS, 86(2), 1999, pp. 1114-1118
Authors:
Pophristic, M
Long, FH
Schurman, M
Ramer, J
Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, APPL PHYS L, 74(23), 1999, pp. 3519-3521
Authors:
Ferguson, IT
Beckman, C
Feng, ZC
Thompson, AG
Stall, R
Hou, HQ
Seipel, K
Chen, SW
Aina, L
Citation: It. Ferguson et al., MOCVD growth of high power 0.5 W 35 GHz MMICs, J CRYST GR, 195(1-4), 1998, pp. 648-654
Authors:
Pophristic, M
Long, FH
Tran, C
Ferguson, IT
Karlicek, RF
Citation: M. Pophristic et al., Time-resolved photoluminescence measurements of InGaN light-emitting diodes, APPL PHYS L, 73(24), 1998, pp. 3550-3552
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1-17
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