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Results: 1-7 |
Results: 7

Authors: Ranchoux, G Plattard, D Polge, G Dusseau, L Fesquet, J Gasiot, J Ecoffet, R
Citation: G. Ranchoux et al., Proton dosimetry measurements and calculations in electronic packages using optically stimulated luminescent films, IEEE NUCL S, 48(5), 2001, pp. 1731-1734

Authors: Saigne, F Dusseau, L Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves, IEEE NUCL S, 47(6), 2000, pp. 2244-2248

Authors: Saigne, F Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2329-2333

Authors: Dusseau, L Plattard, D Vaille, JR Polge, G Ranchoux, G Saigne, F Fesquet, J Ecoffet, R Gasiot, J
Citation: L. Dusseau et al., An integrated sensor using Optically Stimulated Luminescence for in-flightdosimetry, IEEE NUCL S, 47(6), 2000, pp. 2412-2416

Authors: Quittard, O Joffre, F Brisset, C Oudea, C Saigne, F Dusseau, L Fesquet, J Gasiot, J
Citation: O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639

Authors: Dusseau, L Ranchoux, G Polge, G Plattard, D Saigne, F Bessiere, JC Fesquet, J Gasiot, J
Citation: L. Dusseau et al., High energy electron dose-mapping using optically stimulated luminescent films, IEEE NUCL S, 46(6), 1999, pp. 1757-1761

Authors: Dusseau, L Polge, G Albert, L Magnac, Y Bessiere, JC Fesquet, J Gasiot, J
Citation: L. Dusseau et al., Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry, IEEE NUCL S, 45(6), 1998, pp. 2695-2699
Risultati: 1-7 |