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Results: 1-25 | 26-32
Results: 1-25/32
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
Determination of enthalpic interaction coefficients by ITC measurements. 2-hydroxypropyl-beta-cyclodextrin in aqueous solution of NaCl
Authors: Fini, P Castagnolo, M
Citation: P. Fini et M. Castagnolo, Determination of enthalpic interaction coefficients by ITC measurements. 2-hydroxypropyl-beta-cyclodextrin in aqueous solution of NaCl, J THERM ANA, 66(1), 2001, pp. 91-102
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, J CRYST GR, 233(4), 2001, pp. 709-716
Chemical solution deposition derived buffer layers for MOCVD-grown GaN films
Authors: Puchinger, M Wagner, T Fini, P Kisailus, D Beck, U Bill, J Aldinger, F Arzt, E Lange, FF
Citation: M. Puchinger et al., Chemical solution deposition derived buffer layers for MOCVD-grown GaN films, J CRYST GR, 233(1-2), 2001, pp. 57-67
GaNHBT: Toward an RF device
Authors: McCarthy, LS Smorchkova, IP Xing, HL Kozodoy, P Fini, P Limb, J Pulfrey, DL Speck, JS Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., GaNHBT: Toward an RF device, IEEE DEVICE, 48(3), 2001, pp. 543-551
Investigations of chemical vapor deposition of GaN using synchrotron radiation
Authors: Thompson, C Stephenson, GB Eastman, JA Munkholm, A Auciello, O Murty, MVR Fini, P DenBaars, SP Speck, JS
Citation: C. Thompson et al., Investigations of chemical vapor deposition of GaN using synchrotron radiation, J ELCHEM SO, 148(5), 2001, pp. C390-C394
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
Authors: McCarthy, L Smorchkova, I Xing, H Fini, P Keller, S Speck, J DenBaars, SP Rodwell, MJW Mishra, UK
Citation: L. Mccarthy et al., Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 78(15), 2001, pp. 2235-2237
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Improved characteristics of InGaN multi-quantum-well laser diodes grown onlaterally epitaxially overgrown GaN on sapphire
Authors: Hansen, M Fini, P Zhao, LJ Abare, A Coldren, LA Speck, JS DenBaars, SP
Citation: M. Hansen et al., Improved characteristics of InGaN multi-quantum-well laser diodes grown onlaterally epitaxially overgrown GaN on sapphire, MRS I J N S, 5, 2000, pp. NIL_11-NIL_16
Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction
Authors: Zhao, L Marchand, H Fini, P Denbaars, SP Mishra, UK Speck, JS
Citation: L. Zhao et al., Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction, MRS I J N S, 5, 2000, pp. NIL_94-NIL_99
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment
Authors: Munkholm, A Thompson, C Stephenson, GB Eastman, JA Auciello, O Fini, P Speck, JS DenBaars, SP
Citation: A. Munkholm et al., Transition between the 1 x 1 and (root 3 x 2 root 3)R30 degrees surface structures of GaN in the vapor-phase environment, PHYSICA B, 283(1-3), 2000, pp. 217-222
Step bunching on the vicinal GaN(0001) surface
Authors: Murty, MVR Fini, P Stephenson, GB Thompson, C Eastman, JA Munkholm, A Auciello, O Jothilingam, R DenBaars, SP Speck, JS
Citation: Mvr. Murty et al., Step bunching on the vicinal GaN(0001) surface, PHYS REV B, 62(16), 2000, pp. R10661-R10664
In situ studies of the effect of silicon on GaN growth modes
Authors: Munkholm, A Stephenson, GB Eastman, JA Auciello, O Murty, MVR Thompson, C Fini, P Speck, JS DenBaars, SP
Citation: A. Munkholm et al., In situ studies of the effect of silicon on GaN growth modes, J CRYST GR, 221, 2000, pp. 98-105
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
Authors: Fini, P Marchand, H Ibbetson, JP DenBaars, SP Mishra, UK Speck, JS
Citation: P. Fini et al., Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction, J CRYST GR, 209(4), 2000, pp. 581-590
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Authors: Smorchkova, IP Keller, S Heikman, S Elsass, CR Heying, B Fini, P Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers, APPL PHYS L, 77(24), 2000, pp. 3998-4000
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS
Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Authors: Heying, B Smorchkova, I Poblenz, C Elsass, C Fini, P Den Baars, S Mishra, U Speck, JS
Citation: B. Heying et al., Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 77(18), 2000, pp. 2885-2887
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Authors: Stonas, AR Kozodoy, P Marchand, H Fini, P DenBaars, SP Mishra, UK Hu, EL
Citation: Ar. Stonas et al., Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures, APPL PHYS L, 77(16), 2000, pp. 2610-2612
Layer-by-layer growth of GaN induced by silicon
Authors: Munkholm, A Thompson, C Murty, MVR Eastman, JA Auciello, O Stephenson, GB Fini, P DenBaars, SP Speck, JS
Citation: A. Munkholm et al., Layer-by-layer growth of GaN induced by silicon, APPL PHYS L, 77(11), 2000, pp. 1626-1628
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Improved characteristics of InGaN multiple-quantum-well laser diodes grownon laterally epitaxially overgrown GaN on sapphire
Authors: Hansen, M Fini, P Zhao, L Abare, AC Coldren, LA Speck, JS DenBaars, SP
Citation: M. Hansen et al., Improved characteristics of InGaN multiple-quantum-well laser diodes grownon laterally epitaxially overgrown GaN on sapphire, APPL PHYS L, 76(5), 2000, pp. 529-531
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
Authors: Fini, P Munkholm, A Thompson, C Stephenson, GB Eastman, JA Murty, MVR Auciello, O Zhao, L DenBaars, SP Speck, JS
Citation: P. Fini et al., In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN, APPL PHYS L, 76(26), 2000, pp. 3893-3895
Risultati: 1-25 | 26-32