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Results: 1-12 |
Results: 12
Front side and backside OBIT mappings applied to single event transient testing
Authors: Lewis, D Pouget, V Beauchene, T Lapuyade, H Fouillat, P Touboul, A Beaudoin, F Perdu, P
Citation: D. Lewis et al., Front side and backside OBIT mappings applied to single event transient testing, MICROEL REL, 41(9-10), 2001, pp. 1471-1476
Theoretical investigation of an equivalent laser LET
Authors: Pouget, V Lapuyade, H Fouillat, P Lewis, D Buchner, S
Citation: V. Pouget et al., Theoretical investigation of an equivalent laser LET, MICROEL REL, 41(9-10), 2001, pp. 1513-1518
HiperLAN 5.4-GHz low-power CMOS synchronous oscillator
Authors: Deval, Y Begueret, JB Spataro, A Fouillat, P Belot, D Badets, F
Citation: Y. Deval et al., HiperLAN 5.4-GHz low-power CMOS synchronous oscillator, IEEE MICR T, 49(9), 2001, pp. 1525-1530
Laser cross section measurement for the evaluation of single-event effectsin integrated circuits
Authors: Pouget, V Fouillat, P Lewis, D Lapuyade, H Darracq, F Touboul, A
Citation: V. Pouget et al., Laser cross section measurement for the evaluation of single-event effectsin integrated circuits, MICROEL REL, 40(8-10), 2000, pp. 1371-1375
Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs
Authors: Duzellier, S Falguere, D Guibert, L Pouget, V Fouillat, P Ecoffet, R
Citation: S. Duzellier et al., Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs, IEEE NUCL S, 47(6), 2000, pp. 2392-2399
Calculation of heavy ion induced leakage current in n-MOSFETs
Authors: Loquet, JG David, JP Briand, R Fouillat, P
Citation: Jg. Loquet et al., Calculation of heavy ion induced leakage current in n-MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2656-2661
SPICE modeling of the transient response of irradiated MOSFETs
Authors: Pouget, V Lapuyade, H Lewis, D Deval, Y Fouillat, P Sarger, L
Citation: V. Pouget et al., SPICE modeling of the transient response of irradiated MOSFETs, IEEE NUCL S, 47(3), 2000, pp. 508-513
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Authors: Barnaby, HJ Cirba, C Schrimpf, RD Kosier, SL Fouillat, P Montagner, X
Citation: Hj. Barnaby et al., Modeling BJT radiation response with non-uniform energy distributions of interface traps, IEEE NUCL S, 47(3), 2000, pp. 514-518
Validation of radiation hardened designs by pulsed laser testing and SPICEanalysis
Authors: Pouget, V Lewis, D Lapuyade, H Briand, R Fouillat, P Sarger, L Calvet, MC
Citation: V. Pouget et al., Validation of radiation hardened designs by pulsed laser testing and SPICEanalysis, MICROEL REL, 39(6-7), 1999, pp. 931-935
Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control
Authors: Barnaby, HJ Cirba, C Schrimpf, RD Kosier, S Fouillat, P Montagner, X
Citation: Hj. Barnaby et al., Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control, IEEE NUCL S, 46(6), 1999, pp. 1652-1659
Using artificial neural networks or Lagrange interpolation to characterizethe faults in an analog circuit: An experimental study
Authors: Maidon, Y Jervis, BW Fouillat, P Lesage, S
Citation: Y. Maidon et al., Using artificial neural networks or Lagrange interpolation to characterizethe faults in an analog circuit: An experimental study, IEEE INSTR, 48(5), 1999, pp. 932-938
Total dose effects on gate controlled lateral PNP bipolar junction transistors
Authors: Cazenave, P Fouillat, P Montagner, X Barnaby, H Schrimpf, RD Bonora, L David, JP Touboul, A Calvet, MC Calvel, P
Citation: P. Cazenave et al., Total dose effects on gate controlled lateral PNP bipolar junction transistors, IEEE NUCL S, 45(6), 1998, pp. 2577-2583
Risultati: 1-12 |