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Results: 26-42/42
Authors:
Ferreira, EC
da Costa, JAP
Freire, JAK
Farias, GA
Freire, VN
Citation: Ec. Ferreira et al., Sign inversion of the Stark shift in single non-abrupt GaAs/AlxGa1-xAs quantum wells, J PHYS-COND, 11(29), 1999, pp. 5593-5602
Authors:
Caetano, EWS
Mendes, EA
Freire, VN
da Costa, JAP
Lei, XL
Citation: Ews. Caetano et al., The effect of high Landau subbands filling on the hot-electron magneto-transport ultrafast transient in InSb, PHYSICA B, 269(1), 1999, pp. 28-33
Authors:
de Carvalho, RRL
Ribeiro, J
Farias, GA
Freire, VN
Citation: Rrl. De Carvalho et al., Band structure of a cylindrical GaAs/AlxGa1-xAs superwire, SUPERLATT M, 25(1-2), 1999, pp. 221-225
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1-xAs quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 307-311
Authors:
Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. Sousa et al., Blue and red Stark shifts in single Si/SiO2 quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 377-381
Authors:
Rodrigues, CG
Freire, VN
da Costa, JAP
Vasconcellos, AR
Luzzi, R
Citation: Cg. Rodrigues et al., Hot electron dynamics in zincblende and wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 35-39
Authors:
Caetano, EWS
da Costa, JAP
Freire, VN
Citation: Ews. Caetano et al., High-frequency electron mobility in GaN, PHYS ST S-B, 216(1), 1999, pp. 737-742
Authors:
Bezerra, EF
Caetano, EWS
Freire, VN
da Silva, EF
da Costa, JAP
Citation: Ef. Bezerra et al., High-temperature effects on the velocity overshoot of hot electrons in 6H-and 3C-SiC, SEMIC SCI T, 14(11), 1999, pp. 1007-1011
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Interface-related exciton-energy blueshift in GaN/AlxGa1-xN zinc-blende and wurtzite single quantum wells, PHYS REV B, 60(8), 1999, pp. 5705-5713
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Electric field effects on the confinement properties of GaN/AlxGa1-xN zincblende and wurtzite nonabrupt quantum wells, BRAZ J PHYS, 29(4), 1999, pp. 670-674
Authors:
Bezerra, EF
Caetano, EWS
Freire, VN
da Silva, EF
da Costa, JAP
Citation: Ef. Bezerra et al., High temperature behavior of subpicosecond electron transport transient in3C-and 6H-SiC, BRAZ J PHYS, 29(4), 1999, pp. 785-789
Authors:
Shi, JM
Freire, VN
Farias, GA
Citation: Jm. Shi et al., Energy level broadening control in quantum dots by interfacial doping, SOL ST COMM, 113(2), 1999, pp. 115-119
Authors:
Caetano, EWS
Costa, RN
Freire, VN
da Costa, JAP
Citation: Ews. Caetano et al., Velocity overshoot in zincblende and wurtzite GaN, SOL ST COMM, 110(9), 1999, pp. 469-472
Authors:
Wang, H
Farias, GA
Freire, VN
Citation: H. Wang et al., Graded interface effects on the carriers confinement in single GaN/AlxGa1-xN wurtzite quantum wells, SOL ST COMM, 110(10), 1999, pp. 587-592
Authors:
Souza, AG
Matias, JGN
Dias, NL
Freire, VN
Juliao, JF
Gomes, UU
Citation: Ag. Souza et al., Microstructural and electrical properties of sintered tungsten trioxide, J MATER SCI, 34(5), 1999, pp. 1031-1035
Authors:
Oliveira, LO
Farias, GA
Freire, VN
Ferreira, EC
da Costa, JAP
Citation: Lo. Oliveira et al., Resonances in GaAs/AlxGa1-xAs heterojunctions due to Si shallow donors related protrusions, PHYS ST S-B, 210(2), 1998, pp. 683-687
Authors:
de Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
Citation: Js. De Sousa et al., Strong interface effects in graded SiO2/Si/SiO2 quantum wells, J APPL PHYS, 84(9), 1998, pp. 5369-5371