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Results: 1-25 | 26-45 |
Results: 26-45/45
Photoinduced doping in conjugated polymers
Authors: Fung, S Moratti, SC Graham, SC Friend, RH
Citation: S. Fung et al., Photoinduced doping in conjugated polymers, SYNTH METAL, 102(1-3), 1999, pp. 1167-1168
High sensitivity radiation sensing by photoinduced doping in PPV derivatives
Authors: Graham, SC Fung, S Moratti, SC Friend, RH
Citation: Sc. Graham et al., High sensitivity radiation sensing by photoinduced doping in PPV derivatives, SYNTH METAL, 102(1-3), 1999, pp. 1169-1170
Positron beam study of low-temperature-grown GaAs with aluminum delta layers
Authors: Fleischer, S Hu, YF Beling, CD Fung, S Smith, TL Moulding, KM Weng, HM Missous, M
Citation: S. Fleischer et al., Positron beam study of low-temperature-grown GaAs with aluminum delta layers, APPL SURF S, 149(1-4), 1999, pp. 159-164
A theoretical search for possible high efficiency semiconductor based field assisted positron moderators
Authors: Beling, CD Fung, S Ming, L Gong, M Panda, K
Citation: Cd. Beling et al., A theoretical search for possible high efficiency semiconductor based field assisted positron moderators, APPL SURF S, 149(1-4), 1999, pp. 253-259
Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique
Authors: Ling, CC Shek, YF Huang, AP Fung, S Beling, CD
Citation: Cc. Ling et al., Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique, PHYS REV B, 59(8), 1999, pp. 5751-5758
Child abuse and dentistry: A study of knowledge and attitudes among dentists in Victoria, Australia
Authors: John, V Messer, LB Arora, R Fung, S Hatzis, E Nguyen, T San, A Thomas, K
Citation: V. John et al., Child abuse and dentistry: A study of knowledge and attitudes among dentists in Victoria, Australia, AUST DENT J, 44(4), 1999, pp. 259-267
A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature
Authors: Fleischer, S Surya, C Hu, YF Beling, CD Fung, S Smith, TL Moulding, KM Missous, M
Citation: S. Fleischer et al., A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature, J CRYST GR, 196(1), 1999, pp. 53-61
Thermally induced conduction type conversion in n-type InP
Authors: Fung, S Zhao, YW Beling, CD Xu, XL Sun, NF Sun, TN Chen, XD
Citation: S. Fung et al., Thermally induced conduction type conversion in n-type InP, J APPL PHYS, 86(4), 1999, pp. 2361-2363
Compensation defects in annealed undoped liquid encapsulated Czochralski InP
Authors: Fung, S Zhao, YW Xu, XL Chen, XD Sun, NF Sun, TN Zhang, RG Liu, SL Yang, GY Guo, XB Sun, YZ Yan, RY Hua, QH
Citation: S. Fung et al., Compensation defects in annealed undoped liquid encapsulated Czochralski InP, J APPL PHYS, 86(2), 1999, pp. 951-955
Effects of annealing on the electrical properties of Fe-doped InP
Authors: Zhao, YW Fung, S Beling, CD Sun, NF Sun, TN Chen, XD Yang, GY
Citation: Yw. Zhao et al., Effects of annealing on the electrical properties of Fe-doped InP, J APPL PHYS, 86(2), 1999, pp. 981-984
Electron-irradiation-induced deep levels in n-type 6H-SiC
Authors: Gong, M Fung, S Beling, CD You, ZP
Citation: M. Gong et al., Electron-irradiation-induced deep levels in n-type 6H-SiC, J APPL PHYS, 85(11), 1999, pp. 7604-7608
A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC
Authors: Gong, M Fung, S Beling, CD You, SP
Citation: M. Gong et al., A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC, J APPL PHYS, 85(10), 1999, pp. 7120-7122
Gallium implantation induced deep levels in n-type 6H-SIC
Authors: Gong, M Fung, S Beling, CD Brauer, G Wirth, H Skorupa, W
Citation: M. Gong et al., Gallium implantation induced deep levels in n-type 6H-SIC, J APPL PHYS, 85(1), 1999, pp. 105-107
Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's
Authors: Chen, TP Chan, R Fung, S Lo, KF
Citation: Tp. Chen et al., Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's, IEEE INSTR, 48(3), 1999, pp. 721-723
The evolution of a culturally distinct support group for Chinese caregivers of dementia-impaired elders: Trial and error
Authors: Levkoff, S Lui, B Fung, S Hinton, L Chang, K
Citation: S. Levkoff et al., The evolution of a culturally distinct support group for Chinese caregivers of dementia-impaired elders: Trial and error, ALZHEIM REP, 1(2), 1998, pp. 77-82
On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy
Authors: Beling, CD LiMing, W Shan, YY Cheung, SH Fung, S Panda, BK Seitsonen, AP
Citation: Cd. Beling et al., On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy, J PHYS-COND, 10(46), 1998, pp. 10475-10492
High-density multiplex detection of nucleic acid sequences: oligonucleotide ligation assay and sequence-coded separation (vol 22, pg 4527, 1994)
Authors: Grossman, PD Bloch, W Brinson, E Chang, CC Eggerding, FA Fung, S Iovannisci, DM Woo, S Winn-Deen, ES
Citation: Pd. Grossman et al., High-density multiplex detection of nucleic acid sequences: oligonucleotide ligation assay and sequence-coded separation (vol 22, pg 4527, 1994), NUCL ACID R, 26(23), 1998, pp. NIL_11-NIL_11
Positron-lifetime study of compensation defects in undoped semi-insulatingInP
Authors: Beling, CD Deng, AH Shan, YY Zhao, YW Fung, S Sun, NF Sun, TN Chen, XD
Citation: Cd. Beling et al., Positron-lifetime study of compensation defects in undoped semi-insulatingInP, PHYS REV B, 58(20), 1998, pp. 13648-13653
Electrically induced room temperature metastability in semi-insulating GaAs
Authors: Fung, S Luo, YL Beling, CD Chen, TP
Citation: S. Fung et al., Electrically induced room temperature metastability in semi-insulating GaAs, SOL ST COMM, 108(12), 1998, pp. 907-911
Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP
Authors: Fung, S Zhao, YW Beling, CD Xu, XL Gong, M Sun, NF Sun, TN Chen, XD Zhang, RG Liu, SL Yang, GY Qian, JJ Sun, MF Liu, XL
Citation: S. Fung et al., Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP, APPL PHYS L, 73(9), 1998, pp. 1275-1277
Risultati: 1-25 | 26-45 |