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Results: 1-21 |
Results: 21
Native defects and complexes in SiC
Authors: Bechstedt, F Fissel, A Furthmuller, J Grossner, U Zywietz, A
Citation: F. Bechstedt et al., Native defects and complexes in SiC, J PHYS-COND, 13(40), 2001, pp. 9027-9037
First-principles calculation of optical properties: Application to embedded Ge and Si dots
Authors: Weissker, HC Furthmuller, J Bechstedt, F
Citation: Hc. Weissker et al., First-principles calculation of optical properties: Application to embedded Ge and Si dots, PHYS ST S-B, 224(3), 2001, pp. 769-773
Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111) - art. no. 165308
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111) - art. no. 165308, PHYS REV B, 6416(16), 2001, pp. 5308
Calculation of optical properties and density of states for systems with huge unit cells - art. no. 035105
Authors: Weissker, HC Furthmuller, J Bechstedt, F
Citation: Hc. Weissker et al., Calculation of optical properties and density of states for systems with huge unit cells - art. no. 035105, PHYS REV B, 6403(3), 2001, pp. 5105
Optical properties of semiconductors using projector-augmented waves - art. no. 125108
Authors: Adolph, B Furthmuller, J Bechstedt, F
Citation: B. Adolph et al., Optical properties of semiconductors using projector-augmented waves - art. no. 125108, PHYS REV B, 6312(12), 2001, pp. 5108
Influence of composition fluctuations and strain on gap bowing in InxGa1-xN - art. no. 085204
Authors: Teles, LK Furthmuller, J Scolfaro, LMR Leite, JR Bechstedt, F
Citation: Lk. Teles et al., Influence of composition fluctuations and strain on gap bowing in InxGa1-xN - art. no. 085204, PHYS REV B, 6308(8), 2001, pp. 5204
Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces - art. no. 016103
Authors: Bechstedt, F Stekolnikov, AA Furthmuller, J Kackell, P
Citation: F. Bechstedt et al., Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces - art. no. 016103, PHYS REV L, 8701(1), 2001, pp. 6103-NIL_95
On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy
Authors: Fissel, A Richter, W Furthmuller, J Bechstedt, F
Citation: A. Fissel et al., On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy, APPL PHYS L, 78(17), 2001, pp. 2512-2514
Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d-electron elements
Authors: Furthmuller, J Kackell, P Bechstedt, F Kresse, G
Citation: J. Furthmuller et al., Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d-electron elements, PHYS REV B, 61(7), 2000, pp. 4576-4587
Dielectric and lattice-dynamical properties of III-nitrides
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Dielectric and lattice-dynamical properties of III-nitrides, J ELEC MAT, 29(3), 2000, pp. 281-284
First-principles calculations of the thermodynamic and structural properties of strained InxGa1-xN and AlxGa1-xN alloys
Authors: Teles, LK Furthmuller, J Scolfaro, LMR Leite, JR Bechstedt, F
Citation: Lk. Teles et al., First-principles calculations of the thermodynamic and structural properties of strained InxGa1-xN and AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2475-2485
Dynamics and polarization of group-III nitride lattices: A first-principles study
Authors: Bechstedt, F Grossner, U Furthmuller, J
Citation: F. Bechstedt et al., Dynamics and polarization of group-III nitride lattices: A first-principles study, PHYS REV B, 62(12), 2000, pp. 8003-8011
Spin state of vacancies from magnetic Jahn-Teller distortions to multiplets
Authors: Zywietz, A Furthmuller, J Bechstedt, F
Citation: A. Zywietz et al., Spin state of vacancies from magnetic Jahn-Teller distortions to multiplets, PHYS REV B, 62(11), 2000, pp. 6854-6857
Intravacancy transition energies in 3C- and 4H-SiC
Authors: Zywietz, A Furthmuller, J Bechstedt, F
Citation: A. Zywietz et al., Intravacancy transition energies in 3C- and 4H-SiC, PHYS REV B, 61(20), 2000, pp. 13655-13658
Adsorption of group III atoms on SiC(111) surfaces
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Adsorption of group III atoms on SiC(111) surfaces, SURF SCI, 454, 2000, pp. 127-130
Monovacancies in 3C and 4H SiC
Authors: Furthmuller, J Zywietz, A Bechstedt, F
Citation: J. Furthmuller et al., Monovacancies in 3C and 4H SiC, MAT SCI E B, 61-2, 1999, pp. 244-247
Surface energies and surface dipoles at III-nitride(111) surfaces in dependence on stoichiometry
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Surface energies and surface dipoles at III-nitride(111) surfaces in dependence on stoichiometry, PHYS ST S-B, 216(1), 1999, pp. 675-678
Polytypic transformations in SiC: An ab initio study
Authors: Kackell, P Furthmuller, J Bechstedt, F
Citation: P. Kackell et al., Polytypic transformations in SiC: An ab initio study, PHYS REV B, 60(19), 1999, pp. 13261-13264
Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure
Authors: Zywietz, A Furthmuller, J Bechstedt, F
Citation: A. Zywietz et al., Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure, PHYS REV B, 59(23), 1999, pp. 15166-15180
Initial stages of III-nitride growth
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Initial stages of III-nitride growth, APPL PHYS L, 74(25), 1999, pp. 3851-3853
Si-rich SiC(111)/(0001)3x3 and root 3x root 3 surfaces: A Mott-Hubbard picture
Authors: Furthmuller, J Bechstedt, F Husken, H Schroter, B Richter, W
Citation: J. Furthmuller et al., Si-rich SiC(111)/(0001)3x3 and root 3x root 3 surfaces: A Mott-Hubbard picture, PHYS REV B, 58(20), 1998, pp. 13712-13716
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