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Results: 1-25 | 26-35
Results: 1-25/35
NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/
Authors: MULLER B HEUN S LANTIER R RUBINI S PAGGEL JJ SORBA L BONANNI A LAZZARINO M BONANNI B FRANCIOSI A NAPOLITANI E ROMANATO F DRIGO A BONARD JM GANIERE JD LAZZARINI L SALVIATI G
Citation: B. Muller et al., NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2334-2341
ZNSE GROWTH ON LATTICE-MATCHED INXGA1-XAS SUBSTRATES
Authors: HEUN S LANTIER R PAGGEL JJ SORBA L RUBINI S BONANNI B FRANCIOSI A LOMASCOLO M CINGOLANI R BONARD JM GANIERE JD
Citation: S. Heun et al., ZNSE GROWTH ON LATTICE-MATCHED INXGA1-XAS SUBSTRATES, Surface review and letters, 5(3-4), 1998, pp. 693-700
COMBINED TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF DEGRADATION IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREENLASERS/
Authors: BONARD JM GANIERE JD VANZETTI L PAGGEL JJ SORBA L FRANCIOSI A
Citation: Jm. Bonard et al., COMBINED TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF DEGRADATION IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREENLASERS/, Journal of applied physics, 84(3), 1998, pp. 1263-1273
STRAIN AND SURFACE-MORPHOLOGY IN LATTICE-MATCHED ZNSE INXGA1-XAS HETEROSTRUCTURES/
Authors: HEUN S PAGGEL JJ SORBA L RUBINI S BONANNI A LANTIER R LAZZARINO M BONANNI B FRANCIOSI A BONARD JM GANIERE JD ZHUANG Y BAUER G
Citation: S. Heun et al., STRAIN AND SURFACE-MORPHOLOGY IN LATTICE-MATCHED ZNSE INXGA1-XAS HETEROSTRUCTURES/, Journal of applied physics, 83(5), 1998, pp. 2504-2510
TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF EXTENDED DEFECTS IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREEN LASERS/
Authors: BONARD JM GANIERE JD VANZETTI L PAGGEL JJ SORBA L FRANCIOSI A HERVE D MOLVA E
Citation: Jm. Bonard et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE STUDIES OF EXTENDED DEFECTS IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE BLUE-GREEN LASERS/, Journal of applied physics, 83(4), 1998, pp. 1945-1952
LOCAL INTERFACE COMPOSITION AND EXTENDED DEFECT DENSITY IN ZNSE GAAS(001) AND ZNSE/IN0.04GA0.96AS(001) HETEROJUNCTIONS/
Authors: HEUN S PAGGEL JJ SORBA L RUBINI S FRANCIOSI A BONARD JM GANIERE JD
Citation: S. Heun et al., LOCAL INTERFACE COMPOSITION AND EXTENDED DEFECT DENSITY IN ZNSE GAAS(001) AND ZNSE/IN0.04GA0.96AS(001) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1279-1285
DEGRADATION DEFECTS IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE (GRINSCH) BLUE AND BLUE-GREENLASERS/
Authors: BONARD JM GANIERE JD VANZETTI L PAGGEL JJ SORBA L FRANCIOSI A HERVE D MOLVA E
Citation: Jm. Bonard et al., DEGRADATION DEFECTS IN ELECTRON-BEAM-PUMPED ZN1-XCDXSE ZNSE GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE (GRINSCH) BLUE AND BLUE-GREENLASERS/, Philosophical magazine letters, 76(3), 1997, pp. 181-187
STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS
Authors: BONARD JM GANIERE JD HEUN S PAGGEL JJ RUBINI S SORBA L FRANCIOSI A
Citation: Jm. Bonard et al., STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS, Philosophical magazine letters, 75(4), 1997, pp. 219-226
INTERFACE COMPOSITION AND STACKING-FAULT DENSITY IN II-VI III-V HETEROSTRUCTURES/
Authors: HEUN S PAGGEL JJ SORBA L RUBINI S FRANCIOSI A BONARD JM GANIERE JD
Citation: S. Heun et al., INTERFACE COMPOSITION AND STACKING-FAULT DENSITY IN II-VI III-V HETEROSTRUCTURES/, Applied physics letters, 70(2), 1997, pp. 237-239
EPITAXIAL-GROWTH OF SI1-X-YGEXCY ALLOY LAYERS ON (100)SI BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE
Authors: MI J WARREN P GAILHANOU M GANIERE JD DUTOIT M JOUNEAU PH HOURIET R
Citation: J. Mi et al., EPITAXIAL-GROWTH OF SI1-X-YGEXCY ALLOY LAYERS ON (100)SI BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING METHYLSILANE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1660-1669
LOCAL QUANTIFICATION OF THE COMPOSITION IN GAAS ALXGA1-XAS STRUCTURESBY THICKNESS FRINGE ANALYSIS/
Authors: BONARD JM GANIERE JD
Citation: Jm. Bonard et Jd. Ganiere, LOCAL QUANTIFICATION OF THE COMPOSITION IN GAAS ALXGA1-XAS STRUCTURESBY THICKNESS FRINGE ANALYSIS/, Ultramicroscopy, 62(4), 1996, pp. 249-259
PHOTON RECYCLING AS THE DOMINANT PROCESS OF LUMINESCENCE GENERATION IN AN ELECTRON-BEAM EXCITED N-INP EPILAYER GROWN ON AN N(-INP SUBSTRATE())
Authors: CLETON F SIEBER B MASUT RA ISNARD L BONARD JM GANIERE JD
Citation: F. Cleton et al., PHOTON RECYCLING AS THE DOMINANT PROCESS OF LUMINESCENCE GENERATION IN AN ELECTRON-BEAM EXCITED N-INP EPILAYER GROWN ON AN N(-INP SUBSTRATE()), Semiconductor science and technology, 11(5), 1996, pp. 726-734
CHARACTERIZATION OF SEMICONDUCTOR SUBMICRON GRATINGS - IS THERE AN ALTERNATIVE TO SCANNING ELECTRON-MICROSCOPY
Authors: BONARD JM GANIERE JD MORIERGENOUD F ACHTENHAGEN M
Citation: Jm. Bonard et al., CHARACTERIZATION OF SEMICONDUCTOR SUBMICRON GRATINGS - IS THERE AN ALTERNATIVE TO SCANNING ELECTRON-MICROSCOPY, Semiconductor science and technology, 11(3), 1996, pp. 410-414
DEGRADATION OF MICROGUN-PUMPED BLUE LASERS
Authors: HERVE D BONARD JM VANZETTI L PAGGEL JJ SORBA L GANIERE JD MOLVA E FRANCIOSI A
Citation: D. Herve et al., DEGRADATION OF MICROGUN-PUMPED BLUE LASERS, Journal of crystal growth, 159(1-4), 1996, pp. 600-604
TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .1. SPATIAL VARIATIONS OF THE TENSILE-STRESS RELAXATION/
Authors: CLETON F SIEBER B LEFEBVRE A BENSAADA A MASUT RA BONARD JM GANIERE JD AMBRI M
Citation: F. Cleton et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .1. SPATIAL VARIATIONS OF THE TENSILE-STRESS RELAXATION/, Journal of applied physics, 80(2), 1996, pp. 827-836
TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .2. ON THE ORIGIN OF LUMINESCENCE HETEROGENEITIES IN TENSILE-STRESS RELAXED GAXIN1-XP/INP HETEROSTRUCTURES/
Authors: CLETON F SIEBER B BENSAADA A MASUT RA BONARD JM GANIERE JD
Citation: F. Cleton et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .2. ON THE ORIGIN OF LUMINESCENCE HETEROGENEITIES IN TENSILE-STRESS RELAXED GAXIN1-XP/INP HETEROSTRUCTURES/, Journal of applied physics, 80(2), 1996, pp. 837-845
QUANTITATIVE-ANALYSIS OF ELECTRON-BEAM-INDUCED CURRENT PROFILES ACROSS P-N-JUNCTIONS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES/
Authors: BONARD JM GANIERE JD
Citation: Jm. Bonard et Jd. Ganiere, QUANTITATIVE-ANALYSIS OF ELECTRON-BEAM-INDUCED CURRENT PROFILES ACROSS P-N-JUNCTIONS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES/, Journal of applied physics, 79(9), 1996, pp. 6987-6994
BACKGROUND SI-DOPING EFFECTS ON ZN DIFFUSION-INDUCED DISORDERING IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: KY NH GANIERE JD REINHART FK BLANCHARD B
Citation: Nh. Ky et al., BACKGROUND SI-DOPING EFFECTS ON ZN DIFFUSION-INDUCED DISORDERING IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 79(8), 1996, pp. 4009-4016
CATHODOLUMINESCENCE STUDY OF THE SPATIAL-DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS
Authors: BONARD JM GANIERE JD AKAMATSU B ARAUJO D REINHART FK
Citation: Jm. Bonard et al., CATHODOLUMINESCENCE STUDY OF THE SPATIAL-DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS, Journal of applied physics, 79(11), 1996, pp. 8693-8703
INHOMOGENEOUS STRAIN RELAXATION AND DETECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (110)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY (VOL 78, PG 229, 1995)
Authors: LOVERGINE N LIACI F GANIERE JD LEO G DRIGO AV ROMANTO F MANCINI AM VASANELLI L
Citation: N. Lovergine et al., INHOMOGENEOUS STRAIN RELAXATION AND DETECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (110)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY (VOL 78, PG 229, 1995), Journal of applied physics, 79(1), 1996, pp. 562-562
TUNING OF ZNSE-GAAS BAND DISCONTINUITIES IN HETEROJUNCTION DIODES
Authors: PELLEGRINI V BORGER M LAZZERI M BELTRAM F PAGGEL JJ SORBA L RUBINI S LAZZARINO M FRANCIOSI A BONARD JM GANIERE JD
Citation: V. Pellegrini et al., TUNING OF ZNSE-GAAS BAND DISCONTINUITIES IN HETEROJUNCTION DIODES, Applied physics letters, 69(21), 1996, pp. 3233-3235
CHEMICAL BEAM EPITAXY OF 1.55-MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES
Authors: CARLIN JFR SALLESE JM DEFAYS MP GRUNBERG PJ RUDRA AP BONARD JM ILEGEMS M GANIERE JD
Citation: Jfr. Carlin et al., CHEMICAL BEAM EPITAXY OF 1.55-MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES, Optical engineering, 34(7), 1995, pp. 1993-1999
INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: LOVERGINE N LIACI L GANIERE JD LEO G DRIGO AV ROMANATO F MANCINI AM VASANELLI L
Citation: N. Lovergine et al., INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 78(1), 1995, pp. 229-235
DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE
Authors: ARAUJO D BONARD JM OELGART G GANIERE JD MORIERGENOUD F REINHART FK
Citation: D. Araujo et al., DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 124-129
ONE-STEP GROWTH OF BURIED HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY OVER PATTERNED INP SUBSTRATES
Authors: RUDRA A SUGIURA H LING J BONARD JM GANIERE JD DEFAYS M ARAUJO D ILEGEMS M
Citation: A. Rudra et al., ONE-STEP GROWTH OF BURIED HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY OVER PATTERNED INP SUBSTRATES, Journal of crystal growth, 136(1-4), 1994, pp. 173-178
Risultati: 1-25 | 26-35