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Results: 1-21 |
Results: 21
SPECIAL ISSUE PAPERS ON III-V NITRIDES AND SILICON-CARBIDE - FOREWORD
Authors: ADESIDA I GASKILL DK MELLOCH MR SPENCER M
Citation: I. Adesida et al., SPECIAL ISSUE PAPERS ON III-V NITRIDES AND SILICON-CARBIDE - FOREWORD, Journal of electronic materials, 27(4), 1998, pp. 159-159
MAGNETOOPTICAL STUDIES OF GAN AND GAN ALXGA1-XN - DONOR ZEEMAN SPECTROSCOPY AND 2-DIMENSIONAL ELECTRON-GAS CYCLOTRON-RESONANCE/
Authors: WANG YJ KAPLAN R NG HK DOVERSPIKE K GASKILL DK IKEDO T AKASAKI I AMONO H
Citation: Yj. Wang et al., MAGNETOOPTICAL STUDIES OF GAN AND GAN ALXGA1-XN - DONOR ZEEMAN SPECTROSCOPY AND 2-DIMENSIONAL ELECTRON-GAS CYCLOTRON-RESONANCE/, Journal of applied physics, 79(10), 1996, pp. 8007-8010
THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE
Authors: DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA
Citation: K. Doverspike et al., THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE, Journal of electronic materials, 24(4), 1995, pp. 269-273
THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES
Authors: GASKILL DK WICKENDEN AE DOVERSPIKE K TADAYON B ROWLAND LB
Citation: Dk. Gaskill et al., THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES, Journal of electronic materials, 24(11), 1995, pp. 1525-1530
DOPING OF GALLIUM NITRIDE USING DISILANE
Authors: WICKENDEN AE ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Ae. Wickenden et al., DOPING OF GALLIUM NITRIDE USING DISILANE, Journal of electronic materials, 24(11), 1995, pp. 1547-1550
OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
Authors: GLASER ER KENNEDY TA DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA KHAN MA OLSON DT KUZNIA JN WICKENDEN DK
Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336
OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS
Authors: QIAN W SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS, Journal of crystal growth, 151(3-4), 1995, pp. 396-400
PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE
Authors: KIM SS HERMAN IP TUCHMAN JA DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: Ss. Kim et al., PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 67(3), 1995, pp. 380-382
OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
Authors: QIAN W ROHRER GS SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 67(16), 1995, pp. 2284-2286
ELECTRON HALL-MOBILITY OF N-GAN (VOL 66, PG 1972, 1995)
Authors: RODE DL GASKILL DK
Citation: Dl. Rode et Dk. Gaskill, ELECTRON HALL-MOBILITY OF N-GAN (VOL 66, PG 1972, 1995), Applied physics letters, 67(16), 1995, pp. 2418-2418
NONLINEAR ABSORPTION AND RETRACTION OF QUANTUM-CONFINED INP NANOCRYSTALS GROWN IN POROUS-GLASS
Authors: DVORAK MD JUSTUS BL GASKILL DK HENDERSHOT DG
Citation: Md. Dvorak et al., NONLINEAR ABSORPTION AND RETRACTION OF QUANTUM-CONFINED INP NANOCRYSTALS GROWN IN POROUS-GLASS, Applied physics letters, 66(7), 1995, pp. 804-806
ELECTRON HALL-MOBILITY OF N-GAN
Authors: RODE DL GASKILL DK
Citation: Dl. Rode et Dk. Gaskill, ELECTRON HALL-MOBILITY OF N-GAN, Applied physics letters, 66(15), 1995, pp. 1972-1973
SILICON DOPING OF GAN USING DISILANE
Authors: ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Lb. Rowland et al., SILICON DOPING OF GAN USING DISILANE, Applied physics letters, 66(12), 1995, pp. 1495-1497
MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: QIAN W SKOWRONSKI M DEGRAEF M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Applied physics letters, 66(10), 1995, pp. 1252-1254
MODULATED REFLECTANCE AND ADSORPTION CHARACTERIZATION OF SINGLE-CRYSTAL GAN FILMS
Authors: GIORDANA A GASKILL DK WICKENDEN DK WICKENDEN AE
Citation: A. Giordana et al., MODULATED REFLECTANCE AND ADSORPTION CHARACTERIZATION OF SINGLE-CRYSTAL GAN FILMS, Journal of electronic materials, 23(6), 1994, pp. 509-512
THERMAL-STABILITY OF GAN THIN-FILMS GROWN ON (0001) AL2O3, (01(1)OVER-BAR-2) AL2O3 AND (0001)SI 6H-SIC SUBSTRATES
Authors: SUN CJ KUNG P SAXLER A OHSATO H BIGAN E RAZEGHI M GASKILL DK
Citation: Cj. Sun et al., THERMAL-STABILITY OF GAN THIN-FILMS GROWN ON (0001) AL2O3, (01(1)OVER-BAR-2) AL2O3 AND (0001)SI 6H-SIC SUBSTRATES, Journal of applied physics, 76(1), 1994, pp. 236-241
MICROWAVE PERFORMANCE OF GAN MESFETS
Authors: BINARI SC ROWLAND LB KRUPPA W KELNER G DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., MICROWAVE PERFORMANCE OF GAN MESFETS, Electronics Letters, 30(15), 1994, pp. 1248-1249
ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 30(11), 1994, pp. 909-911
CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE
Authors: GIORDANA A GLEMBOCKI OJ GLASER ER GASKILL DK KYONO CS TWIGG ME FATEMI M TADAYON B TADAYON S
Citation: A. Giordana et al., CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE, Journal of electronic materials, 22(12), 1993, pp. 1391-1393
OPTICAL LIMITING IN SEMICONDUCTOR NANOCRYSTALS IN GLASS
Authors: JUSTUS BL CAMPILLO AJ HENDERSHOT DG GASKILL DK
Citation: Bl. Justus et al., OPTICAL LIMITING IN SEMICONDUCTOR NANOCRYSTALS IN GLASS, Optics communications, 103(5-6), 1993, pp. 405-409
ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AND CHARACTERIZATION OF INDIUM-PHOSPHIDE NANOCRYSTALS IN VYCOR POROUS-GLASS
Authors: HENDERSHOT DG GASKILL DK JUSTUS BL FATEMI M BERRY AD
Citation: Dg. Hendershot et al., ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AND CHARACTERIZATION OF INDIUM-PHOSPHIDE NANOCRYSTALS IN VYCOR POROUS-GLASS, Applied physics letters, 63(24), 1993, pp. 3324-3326
Risultati: 1-21 |