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Results:
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Results: 22
Authors:
CORNI F
FRABBONI S
TONINI R
LEONE D
DEBOER W
GASPAROTTO A
Citation: F. Corni et al., THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS, JPN J A P 2, 37(3B), 1998, pp. 339-342
Authors:
FRIGERI C
CARNERA A
FRABONI B
GASPAROTTO A
CASSA A
PRIOLO F
CAMPORESE A
ROSSETTO G
Citation: C. Frigeri et al., DEFECT CHARACTERIZATION IN INP SUBSTRATES IMPLANTED WITH 2 MEV FE IONS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 193-197
Authors:
GALBIATI N
GRILLI E
GUZZI M
ALBERTINI P
BRUSAFERRI L
PAVESI L
HENINI M
GASPAROTTO A
Citation: N. Galbiati et al., INVESTIGATION OF SI AS AN N-TYPE DOPANT IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON HIGH-INDEX PLANES, Semiconductor science and technology, 12(5), 1997, pp. 555-563
Authors:
GALVAGNO G
LAFERLA A
LAVIA F
RAINERI V
GASPAROTTO A
CARNERA A
RIMINI E
Citation: G. Galvagno et al., HOLE MOBILITY IN ALUMINUM IMPLANTED SILICON, Semiconductor science and technology, 12(11), 1997, pp. 1433-1437
Authors:
FRIGERI C
CARNERA A
GASPAROTTO A
Citation: C. Frigeri et al., ELECTRON-MICROSCOPY STUDY OF FE-IMPLANTED INP, Applied physics A: Materials science & processing, 62(1), 1996, pp. 65-72
Authors:
LAFERLA A
GALVAGNO G
RINAUDO S
RAINERI V
FRANCO G
CAMALLERI M
GASPAROTTO A
CARNERA A
RIMINI E
Citation: A. Laferla et al., ION-IMPLANTATION AND DIFFUSION OF AL IN A SIO2 SI SYSTEM/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 378-381
Authors:
RIGO C
MADELLA M
PAPUZZA C
CACCIATORE C
STANO A
GASPAROTTO A
SALVIATI G
NASI L
Citation: C. Rigo et al., INP-FE SEMIINSULATING LAYERS BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 430-433
Authors:
PERONI M
DEUSTACCHIO P
DIVIRGINIO N
GRAFFITTI R
GASPAROTTO A
Citation: M. Peroni et al., ELECTRICAL BEHAVIOR OF IMPLANTED CARBON IMPURITIES IN FLUORINE CO-IMPIANTED GAAS, Journal of applied physics, 80(7), 1996, pp. 3834-3839
Authors:
CELLINI C
CARNERA A
BERTI M
GASPAROTTO A
STEER D
SERVIDORI M
MILITA S
Citation: C. Cellini et al., PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 227-231
Authors:
LAFERLA A
GALVAGNO G
RAINERI V
PRIOLO F
CARNERA A
GASPAROTTO A
RIMINI E
Citation: A. Laferla et al., DOPANT, DEFECTS AND OXYGEN INTERACTION IN MEV IMPLANTED CZOCHRALSKI SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 232-235
Authors:
CARNERA A
GASPAROTTO A
SCORDILLI A
PRIOLO F
FRIGERI C
ROSSETTO G
Citation: A. Carnera et al., MEV ENERGY IMPLANTATION OF FE IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 307-310
Authors:
RIMINI E
RAINERI V
LAFERLA A
GALVAGNO G
FRANCO G
CARNERA A
GASPAROTTO A
Citation: E. Rimini et al., IMPURITY EFFECTS ON OXYGEN PRECIPITATION INDUCED BY MEV IMPLANTS IN CZ SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 419-423
Authors:
BOSACCHI A
GOMBIA E
MOSCA R
FRANCHI S
CARNERA A
GASPAROTTO A
Citation: A. Bosacchi et al., SHALLOW DONORS AND DEEP LEVELS IN GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 261-265
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION(VOL 76, PG 5085, 1994), Journal of applied physics, 77(8), 1995, pp. 4159-4159
Authors:
LAFERLA A
RIMINI E
CARNERA A
GASPAROTTO A
CIAVOLA G
FERLA G
Citation: A. Laferla et al., EXPERIMENTAL-ANALYSIS OF HIGH-ENERGY BORON IMPLANTATION IN SILICON, Radiation effects and defects in solids, 129(3-4), 1994, pp. 133-139
Authors:
BIANCONI M
NIPOTI R
CANTIANO M
GASPAROTTO A
SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING SPECTRA - SIMULATION OF AS-IMPLANTED SI SAMPLES THROUGH AN EMPIRICAL-FORMULA FOR (100) AXIAL DECHANNELING OF HE IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(4), 1994, pp. 507-511
Authors:
CARNERA A
GASPAROTTO A
BERTI M
FABBRI R
Citation: A. Carnera et al., INFLUENCE OF CHANNELING EFFECTS ON ION DISTRIBUTION AND DAMAGE PROFILES DURING HIGH-ENERGY ION-IMPLANTATION IN SI, Mikrochimica acta, 114, 1994, pp. 205-211
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION, Journal of applied physics, 76(9), 1994, pp. 5085-5094
Authors:
GALVAGNO G
LAFERLA A
SPINELLA C
PRIOLO F
RAINERI V
TORRISI L
RIMINI E
CARNERA A
GASPAROTTO A
Citation: G. Galvagno et al., AL-O INTERACTIONS IN ION-IMPLANTED CRYSTALLINE SILICON, Journal of applied physics, 76(4), 1994, pp. 2070-2077
Authors:
GASPAROTTO A
CARNERA A
ARZENTON G
TROMBY M
PELLEGRINO S
VIDIMARI F
CALDIRONI M
Citation: A. Gasparotto et al., ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 773-776
Authors:
BERTI M
BRUSATIN G
CARNERA A
GASPAROTTO A
FABBRI R
Citation: M. Berti et al., CHANNELING EFFECTS IN HIGH-ENERGY ION-IMPLANTATION - SI(N), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 58-61
Authors:
WALKER JF
MICOVIC M
CARNERA A
GASPAROTTO A
Citation: Jf. Walker et al., DOPANT EVAPORATION SOURCES FOR MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 990-994
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