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Results:
1-23
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Results: 23
Authors:
KECHOUANE M
BELDI N
MOHAMMEDBRAHIM T
LHARIDON H
SALVI M
GAUNEAU M
FAVENNEC PN
Citation: M. Kechouane et al., OXYGEN ENHANCEMENT OF 1.54 MU-M ER3-SILICON( LUMINESCENCE IN HYDROGENATED AMORPHOUS), Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(1), 1998, pp. 137-145
Authors:
MASSIOT P
PERRIN C
GUILLOUXVIRY M
GAUNEAU M
Citation: P. Massiot et al., INFLUENCE OF HALOGENATION ON SUPERCONDUCTING PROPERTIES OF OXYGEN-DEFICIENT YBA2CU3OX THIN-FILMS - COMPARISON WITH HALOGENATION OF YBA2CU3OX CERAMICS, Physica. C, Superconductivity, 299(3-4), 1998, pp. 197-204
Authors:
GAUNEAU M
VOLLE R
MARTEL G
MOISAN JY
Citation: M. Gauneau et al., IMPURITIES AND DOPANTS IN VANADIUM-DOPED CDTE, Optical materials, 7(1-2), 1997, pp. 21-31
Authors:
HBIB H
BONNAUD O
GAUNEAU M
HAMEDI L
MARCHAND R
QUEMERAIS A
Citation: H. Hbib et al., CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES, Thin solid films, 310(1-2), 1997, pp. 1-7
Authors:
HBIB H
BONNAUD O
QUEMERAIS A
GAUNEAU M
ADAM JL
MARCHAND R
Citation: H. Hbib et al., PREPARATION AND CHARACTERIZATION OF PHOSP HORUS OXINITRIDE THIN-FILMSFOR INP PASSIVATION, Journal de physique. III, 6(11), 1996, pp. 1489-1506
Authors:
LAMBERT B
ROUILLARD Y
TOUDIC Y
COQUILLE R
GUENAIS B
GAUNEAU M
DEFARS JP
DEVEAUD B
Citation: B. Lambert et al., FEASIBILITY OF 1.5 MU-M STAIRCASE SOLID-STATE PHOTOMULTIPLIERS IN THEALGASB GAINASSB SYSTEM/, Semiconductor science and technology, 11(2), 1996, pp. 226-230
Authors:
DEVINE RAB
MATHIOT D
XU JB
WILSON IH
GAUNEAU M
WARREN WL
Citation: Rab. Devine et al., GRAIN-BOUNDARY ENHANCED OXYGEN OUT-DIFFUSION IN ANNEALED POLYCRYSTALLINE SI SIO2/CRYSTALLINE SI STRUCTURES/, Thin solid films, 286(1-2), 1996, pp. 317-320
Authors:
MARTEL G
MOISAN JY
LAMBERT B
GAUNEAU M
STEPHAN S
WOLFFER N
GRAVEY P
AOUDIA A
RZEPKA E
MARFAING Y
TRIBOULET R
BUSCH MC
HADJALI M
KOEBEL JM
SIFFERT P
BREMOND G
ZERRAI A
MARRAKCHI G
Citation: G. Martel et al., INFLUENCE OF ZINC ON THE PHOTOREFRACTIVE BEHAVIOR OF CD1-XZNXTE-V, Journal of crystal growth, 161(1-4), 1996, pp. 250-258
Authors:
ZERRAI A
MARRAKCHI G
BREMOND G
MOISAN JY
MARTEL G
GAUNEAU M
LAMBERT B
GRAVEY P
WOLFFER N
AOUDIA A
MARFAING Y
TRIBOULET R
KOEBEL JM
HADJALI M
SIFFERT P
Citation: A. Zerrai et al., RELATIONSHIP BETWEEN DEEP LEVELS IN VANADIUM-DOPED CDTE AND PHOTOREFRACTIVE EFFECT, Journal of crystal growth, 161(1-4), 1996, pp. 264-270
Authors:
LAMBERT B
GAUNEAU M
GRANDPIERRE G
SCHOISSWOHL M
VONBARDELEBEN HJ
LAUNAY JC
MAZOYER V
AOUDIA A
RZEPKA E
MARFAING Y
TRIBOULET R
Citation: B. Lambert et al., EFFECTIVE TRAP CONCENTRATION IN PHOTO REFRACTIVE CDTE-V AND ZNCDTE-V CRYSTALS, Optical materials, 4(2-3), 1995, pp. 267-270
Authors:
NEDELEC S
MATHIOT D
GAUNEAU M
STRABONI A
Citation: S. Nedelec et al., BORON-DIFFUSION IN SIO2 BASED DIELECTRIC THIN-LAYERS, Journal of non-crystalline solids, 187, 1995, pp. 106-111
Authors:
ROUILLARD Y
LAMBERT B
TOUDIC Y
BAUDET M
GAUNEAU M
Citation: Y. Rouillard et al., ON THE USE OF DIMERIC ANTIMONY IN MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 156(1-2), 1995, pp. 30-38
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
GAUNEAU M
BAUDET M
ALARD F
VALIENTE I
SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES/, Applied physics letters, 66(4), 1995, pp. 442-444
Authors:
TROUILLAS P
RATIER B
MOLITON A
GAUNEAU M
BERNIER P
Citation: P. Trouillas et al., DOPING OF C-60 FILMS AFTER ION-IMPLANTATI ON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(4), 1994, pp. 893-904
Authors:
REGOLINI JL
BODNAR S
OBERLIN JC
FERRIEU F
GAUNEAU M
LAMBERT B
BOUCAUD P
Citation: Jl. Regolini et al., STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1015-1019
Authors:
SALAUN S
GAUNEAU M
LECORRE A
MOTTET S
VIALLET JE
GUENEGOU H
KERMEL C
Citation: S. Salaun et al., HIGH-RESISTIVITY INP-TI,BE BY GSMBE, Electronics Letters, 30(24), 1994, pp. 2076-2077
Authors:
BENIERE F
CHAPLAIN R
GAUNEAU M
REDDY V
REGRENY A
Citation: F. Beniere et al., DELTA-DOPING IN-DIFFUSION STUDIES, Journal de physique. III, 3(12), 1993, pp. 2165-2171
Authors:
LHARIDON H
LECORRE A
SALAUN S
LECROSNIER D
PASSARET A
GODEFROY A
GAUNEAU M
Citation: H. Lharidon et al., SCANNING PHOTOLUMINESCENCE CHARACTERIZATION OF IRON-DOPED GAS-SOURCE MOLECULAR-BEAM EPITAXY INDIUM-PHOSPHIDE LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 82-87
Authors:
GOUYPAILLER P
HAOND M
MATHIOT D
GAUNEAU M
PERIO A
REGOLINI JL
Citation: P. Gouypailler et al., A COMPARATIVE-STUDY OF TISI2, OBTAINED BY SOLID-STATE REACTION AND CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 73, 1993, pp. 25-30
Authors:
CALLEC R
POUDOULEC A
SALVI M
LHARIDON H
FAVENNEC PN
GAUNEAU M
Citation: R. Callec et al., ION-IMPLANTATION DAMAGE AND ANNEALING IN GASB, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 532-537
Authors:
GAUNEAU M
CHAPLAIN R
RUPERT A
TOUDIC Y
RIVIERE D
CALLEC R
Citation: M. Gauneau et al., SWELLING OF GASB AT LOW ENERGIES (1.3-14.5 KEV), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 543-547
Authors:
KECHOUANE M
LHARIDON H
SALVI M
FAVENNEC PN
GAUNEAU M
GUILLOUXVIRY M
KARKUT MG
THIVET C
PERRIN A
Citation: M. Kechouane et al., CRYSTALLINE CHARACTERIZATION BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND ELECTRON CHANNELING OF IN-SITU GROWN YBA2CU3O7 THIN-FILMS DEPOSITED ON (100) MGO BY DC SPUTTERING OR LASER-ABLATION, Journal of Materials Science, 28(18), 1993, pp. 4934-4939
Authors:
LHOMER C
LAMBERT B
TOUDIC Y
LECORRE A
GAUNEAU M
CLEROT F
SERMAGE B
Citation: C. Lhomer et al., EXCITATION MECHANISMS OF RARE-EARTH (YB) LUMINESCENCE IN III-V-SEMICONDUCTORS (INP), Semiconductor science and technology, 6(9), 1991, pp. 916-923
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1-23
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