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Results: 1-25/31
Authors:
KOPF RF
HAMM RA
MALIK RJ
RYAN RW
GEVA M
BURM J
TATE A
Citation: Rf. Kopf et al., ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/, Journal of electronic materials, 27(2), 1998, pp. 69-72
Authors:
SWAMINATHAN V
REYNOLDS CL
GEVA M
Citation: V. Swaminathan et al., 1.3 MU-M INGAASP INP CAPPED MESA BURIED HETEROSTRUCTURE LASER WITH ANUNDOPED CLADDING LAYER IN BASE EPITAXIAL-GROWTH/, Journal of applied physics, 83(8), 1998, pp. 4540-4541
Authors:
DEWOLF P
GEVA M
HANTSCHEL T
VANDERVORST W
BYLSMA RB
Citation: P. Dewolf et al., 2-DIMENSIONAL CARRIER PROFILING OF INP STRUCTURES USING SCANNING SPREADING RESISTANCE MICROSCOPY, Applied physics letters, 73(15), 1998, pp. 2155-2157
Authors:
MITTLEMAN DM
CUNNINGHAM J
NUSS MC
GEVA M
Citation: Dm. Mittleman et al., NONCONTACT SEMICONDUCTOR WAFER CHARACTERIZATION WITH THE TERAHERTZ HALL-EFFECT, Applied physics letters, 71(1), 1997, pp. 16-18
Authors:
HWANG WY
MICOVIC M
MILLER DL
GEVA M
Citation: Wy. Hwang et al., CARBON TETRABROMIDE DOPING MEMORY EFFECT, INCORPORATION EFFICIENCY, AND INALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2301-2304
Authors:
HEIMBROOK LA
BAIOCCHI FA
BITTNER TC
GEVA M
LUFTMAN HS
NAKAHARA S
Citation: La. Heimbrook et al., PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 202-212
Authors:
THYGESEN J
KRUMBHOLZ S
LEVIN I
ZAYTZEVBASHAN A
HARMS J
BARTELS H
SCHLUNZEN F
HANSEN HAS
BENNETT WS
VOLKMANN N
AGMON I
EISENSTEIN M
DRIBIN A
MALTZ E
SAGI I
MORLANG S
FUA M
FRANCESCHI F
WEINSTEIN S
BODDEKER N
SHARON R
ANAGNOSTOPOULOS K
PERETZ M
GEVA M
BERKOVITCHYELLIN Z
YONATH A
Citation: J. Thygesen et al., RIBOSOMAL CRYSTALLOGRAPHY - FROM CRYSTAL-GROWTH TO INITIAL PHASING, Journal of crystal growth, 168(1-4), 1996, pp. 308-323
Authors:
HAMM RA
CHANDRASEKHAR S
LUNARDI L
GEVA M
MALIK R
HUMPHREY D
RYAN R
Citation: Ra. Hamm et al., MATERIALS AND ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GA0.47IN0.53AS USING CARBONTETRABROMIDE BY MOMBE FOR HBT DEVICE APPLICATIONS, Journal of crystal growth, 164(1-4), 1996, pp. 362-370
Authors:
CHU SNG
LOGAN RA
GEVA M
HA NT
KARLICEK RF
Citation: Sng. Chu et al., SUBSTITUTIONAL, INTERSTITIAL, AND NEUTRAL ZINC INCORPORATION INTO INPGROWN BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 80(6), 1996, pp. 3221-3227
Authors:
LOGAN RA
CHU SNG
GEVA M
HA NT
THURMOND CD
Citation: Ra. Logan et al., ZINC INCORPORATION INTO INP GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 79(3), 1996, pp. 1371-1377
Authors:
SWAMINATHAN V
REYNOLDS CL
GEVA M
Citation: V. Swaminathan et al., EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/, Electronics Letters, 32(7), 1996, pp. 661-662
Authors:
REYNOLDS CL
SWAMINATHAN V
GEVA M
SMITH LE
LUTHER LC
Citation: Cl. Reynolds et al., UNINTENTIONAL ZINC DIFFUSION IN INP PN-HOMOJUNCTIONS, Journal of electronic materials, 24(6), 1995, pp. 747-750
Authors:
DONG HK
LI NY
TU CW
GEVA M
MITCHEL WC
Citation: Hk. Dong et al., A STUDY OF CHEMICAL BEAM EPITAXY OF GAAS USING TRIS-DIMETHYLAMINOARSENIC, Journal of electronic materials, 24(2), 1995, pp. 69-74
Authors:
LI NY
DONG HK
TU CW
GEVA M
Citation: Ny. Li et al., P-TYPE GAAS DOPED BY DIIODOMETHANE (CI2H2) IN MOLECULAR-BEAM EPITAXY,METALORGANIC MOLECULAR-BEAM EPITAXY, AND CHEMICAL BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 246-250
Authors:
HAMM RA
CHANDRASEKHAR S
LUNARDI L
GEVA M
Citation: Ra. Hamm et al., CHARACTERISTICS OF CARBON-DOPED INGAAS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 148(1-2), 1995, pp. 1-7
Authors:
CHU SNG
LOGAN RA
GEVA M
HA NT
Citation: Sng. Chu et al., CONCENTRATION-DEPENDENT ZN DIFFUSION IN INP DURING METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 78(5), 1995, pp. 3001-3007
Authors:
SCHUBERT EF
PINZONE CJ
GEVA M
Citation: Ef. Schubert et al., PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE), Applied physics letters, 67(5), 1995, pp. 700-702
Authors:
HAMM RA
MALIK R
HUMPHREY D
RYAN R
CHANDRASEKHAR S
LUNARDI L
GEVA M
Citation: Ra. Hamm et al., CARBON DOPING OF GA0.47IN0.53AS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR DEVICES, Applied physics letters, 67(15), 1995, pp. 2226-2228
Authors:
SWAMINATHAN V
REYNOLDS CL
GEVA M
Citation: V. Swaminathan et al., ZN DIFFUSION BEHAVIOR IN INGAASP INP CAPPED MESA BURIED HETEROSTRUCTURES/, Applied physics letters, 66(20), 1995, pp. 2685-2687
Authors:
ASOM MT
LIVESCU G
SWAMINATHAN V
GEVA M
LUTHER L
Citation: Mt. Asom et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF SI-DOPED GAAS ALGAAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1239-1241
Authors:
BYLSMA RB
HOBSON WS
LOPATA J
ZYDZIK GJ
GEVA M
ASOM MT
PEARTON SJ
THOMAS PM
BRIDENBAUGH PM
WASHINGTON MA
ROCCASECCA DD
WILT DP
Citation: Rb. Bylsma et al., CARBON-DOPED IMPURITY-INDUCED LAYER DISORDER 0.98 MU-M LASERS, Journal of applied physics, 76(1), 1994, pp. 590-592
Authors:
CHAND N
CHU SNG
DUTTA NK
LOPATA J
GEVA M
SYRBU AV
MEREUTZA AZ
YAKOVLEV VP
Citation: N. Chand et al., GROWTH AND FABRICATION OF HIGH-PERFORMANCE 980-NM STRAINED INGAAS QUANTUM-WELL LASERS FOR ERBIUM-DOPED FIBER AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 424-440
Authors:
MICOVIC M
EVALDSSON P
GEVA M
TAYLOR GW
VANG T
MALIK RJ
Citation: M. Micovic et al., QUANTUM-WELL LASERS WITH CARBON-DOPED CLADDING LAYERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(4), 1994, pp. 411-413
Authors:
HOBSON WS
PEARTON SJ
REN F
CHENG Y
KOZUCH DM
STAVOLA M
GEVA M
Citation: Ws. Hobson et al., CARBON-DOPED GAAS AND ALGAAS GROWN BY OMVPE - DOPING PROPERTIES, OXYGEN INCORPORATION, AND HYDROGEN PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 266-270
Authors:
KATZ A
FEINGOLD A
ELROY A
MORIYA N
PEARTON SJ
RUSBY A
KOVALCHICK J
ABERNATHY CR
GEVA M
LANE E
Citation: A. Katz et al., RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF LOCAL DIFFUSED W(ZN) CONTACTS, Semiconductor science and technology, 8(7), 1993, pp. 1445-1450