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Results: 1-25/50
Authors:
NIJENHUIS JT
VANWELL HFJM
BONGERS MMG
GILING LJ
Citation: Jt. Nijenhuis et al., DISSOCIATED V-SHAPED DISLOCATION MODEL FOR THE RELAXATION OF STRAINEDSINGLE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 52(1), 1998, pp. 17-24
Authors:
TENIJENHUIS J
CAO GZ
SMITS PCHJ
VANENCKEVORT WJP
GILING LJ
ALKEMADE PFA
NESLADEK M
REMES Z
Citation: J. Tenijenhuis et al., INCORPORATION OF LITHIUM IN SINGLE-CRYSTAL DIAMOND - DIFFUSION PROFILES AND OPTICAL AND ELECTRICAL-PROPERTIES, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1726-1732
Authors:
VANGEELEN A
HAGEMAN PR
BAUHUIS GJ
VANRIJSINGEN PC
SCHMIDT P
GILING LJ
Citation: A. Vangeelen et al., EPITAXIAL LIFT-OFF GAAS SOLAR-CELL FROM A REUSABLE GAAS SUBSTRATE, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 162-171
Authors:
BASTOS PL
ANDERS MJ
BONGERS MMG
SCHERMER JJ
GILING LJ
Citation: Pl. Bastos et al., TEMPERATURE-DEPENDENT FACET DEVELOPMENT IN THE DEPOSITION OF GAINP ONNONPLANAR SURFACES, Surface science, 370(2-3), 1997, pp. 179-189
Authors:
BONGERS MMG
BASTOS PL
ANDERS MJ
GILING LJ
Citation: Mmg. Bongers et al., NONPLANAR CRYSTAL-GROWTH OF GA0.5IN0.5P BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 171(3-4), 1997, pp. 333-340
Authors:
HAGEMAN PR
TENIJENHUIS J
ANDERS MJ
GILING LJ
Citation: Pr. Hageman et al., DEPENDENCE OF IMPURITY INCORPORATION UPON SUBSTRATE MISORIENTATION DURING GAAS GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 270-275
Authors:
BASTOS PL
ANDERS MJ
BONGERS MMG
HAGEMAN PR
GILING LJ
Citation: Pl. Bastos et al., TEMPERATURE-DEPENDENCE ON THE EMERGING CRYSTAL HABIT OF GAINP DEPOSITED ON NONPLANAR (001)GAAS SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 710-714
Authors:
TENIJENHUIS J
OLSTHOORN SM
VANENCKEVORT WJP
GILING LJ
Citation: J. Tenijenhuis et al., RED LUMINESCENCE IN PHOSPHORUS-DOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND, Journal of applied physics, 82(1), 1997, pp. 419-422
Authors:
DRIESSEN FAJM
CHEONG HM
MASCARENHAS A
DEB SK
HAGEMAN PR
BAUHUIS GJ
GILING LJ
Citation: Fajm. Driessen et al., INTERFACE-INDUCED CONVERSION OF INFRARED TO VISIBLE-LIGHT AT SEMICONDUCTOR INTERFACES, Physical review. B, Condensed matter, 54(8), 1996, pp. 5263-5266
Authors:
TENIJENHUIS J
VANDERWEL PJ
VANECK ERH
GILING LJ
Citation: J. Tenijenhuis et al., MISFIT DISLOCATION FORMATION IN LATTICE-MISMATCHED III-V HETEROSTRUCTURES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of physics. D, Applied physics, 29(12), 1996, pp. 2961-2970
Authors:
TENIJENHUIS J
HAGEMAN PR
GILING LJ
Citation: J. Tenijenhuis et al., DEPENDENCE OF INDIUM INCORPORATION UPON THE SUBSTRATE MISORIENTATION DURING GROWTH OF IN(X)GA(1)1-XAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 167(3-4), 1996, pp. 397-405
Authors:
SCHERMER JJ
VANENCKEVORT WJP
GILING LJ
Citation: Jj. Schermer et al., SURFACE STABILIZATION PHENOMENA ON FLAME-DEPOSITED DIAMOND SINGLE-CRYSTALS, Journal of crystal growth, 166(1-4), 1996, pp. 622-627
Authors:
SCHERMER JJ
DETHEIJE FK
GILING LJ
Citation: Jj. Schermer et al., MOSAIC GROWTH OF DIAMOND - A STUDY OF HOMOEPITAXIAL FLAME DEPOSITION AND ETCHING OF (001)-ORIENTED DIAMOND LAYERS, Journal of crystal growth, 165(4), 1996, pp. 387-401
Authors:
LI Y
SALVIATI G
BONGERS MMG
LAZZARINI L
NASI L
GILING LJ
Citation: Y. Li et al., ON THE FORMATION OF ANTIPHASE DOMAINS IN THE SYSTEM OF GAAS ON GE, Journal of crystal growth, 163(3), 1996, pp. 195-202
Authors:
LI Y
GILING LJ
Citation: Y. Li et Lj. Giling, A CLOSER STUDY ON THE SELF-ANNIHILATION OF ANTIPHASE BOUNDARIES IN GAAS EPILAYERS, Journal of crystal growth, 163(3), 1996, pp. 203-211
STRUCTURAL-ANALYSIS OF INXGA1-XAS GROWN ON GE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:
BONGERS MMG
LI Y
TENIJENHUIS J
GILING LJ
Citation: Mmg. Bongers et al., STRUCTURAL-ANALYSIS OF INXGA1-XAS GROWN ON GE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 162(1-2), 1996, pp. 7-14
Authors:
CAO GZ
SCHERMER JJ
VANENCKEVORT WJP
ELST WALM
GILING LJ
Citation: Gz. Cao et al., GROWTH OF (100) TEXTURED DIAMOND FILMS BY THE ADDITION OF NITROGEN, Journal of applied physics, 79(3), 1996, pp. 1357-1364
Authors:
SCHERMER JJ
ELST WALM
GILING LJ
Citation: Jj. Schermer et al., THE INFLUENCE OF DIFFERENCES IN GAS-PHASE BETWEEN TURBULENT AND LAMINAR ACETYLENE-OXYGEN COMBUSTION FLAMES ON DIAMOND GROWTH, DIAMOND AND RELATED MATERIALS, 4(9), 1995, pp. 1113-1125
Authors:
JANSSEN G
GILING LJ
Citation: G. Janssen et Lj. Giling, MOSAIC GROWTH OF DIAMOND, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 1025-1031
Authors:
CAO GZ
GILING LJ
ALKEMADE PFA
Citation: Gz. Cao et al., GROWTH OF PHOSPHORUS AND NITROGEN CO-DOPED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 775-779
Authors:
VANENCKEVORT WJP
JANSSEN G
SCHERMER JJ
GILING LJ
Citation: Wjp. Vanenckevort et al., STEP-RELATED GROWTH PHENOMENA ON EXACT AND MISORIENTED (001) SURFACESOF CVD-GROWN SINGLE-CRYSTAL DIAMONDS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 250-255
Authors:
BASTOS PL
BONGERS MMG
ANDERS MJ
SCHERMER JJ
GILING LJ
Citation: Pl. Bastos et al., TOP EDGE FACET DEVELOPMENT IN ASYMMETRIC GROOVES, Surface science, 344(3), 1995, pp. 1275-1279
Authors:
LI YA
GILING LJ
Citation: Ya. Li et Lj. Giling, INFLUENCE OF THE TEMPERATURE OF THE REACTOR TOP WALL ON GROWTH-PROCESSES IN HORIZONTAL MOVPE REACTORS, Journal of crystal growth, 156(3), 1995, pp. 177-185
Authors:
ANDERS MJ
BONGERS MMG
BASTOS PL
GILING LJ
Citation: Mj. Anders et al., POSITION-DEPENDENT GROWTH-RATE AND COMPOSITION OF LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN INGAP AND ALGAAS ON GAAS INVERTED MESA GROOVES, Journal of crystal growth, 154(3-4), 1995, pp. 240-250
Authors:
JANSSEN G
VANENCKEVORT WJP
VOLLENBERG W
GILING LJ
Citation: G. Janssen et al., ANISOTROPY IN MONOCRYSTALLINE CVD DIAMOND GROWTH .2. DEFECT STRUCTUREOF HOT-FILAMENT GROWN FILMS DEPOSITED ON PLANAR SUBSTRATES, Journal of crystal growth, 148(4), 1995, pp. 355-364