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Results: 1-13 |
Results: 13
PHOTORESIST-FREE FABRICATION PROCESS FOR A-SI-H THIN-FILM TRANSISTORS
Authors: GLESKOVA H WAGNER S SHEN DS
Citation: H. Gleskova et al., PHOTORESIST-FREE FABRICATION PROCESS FOR A-SI-H THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 230, 1998, pp. 1217-1220
MODELING OF GATE LINE DELAY IN VERY LARGE ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS
Authors: ZHANG Q SHEN DS GLESKOVA H WAGNER S
Citation: Q. Zhang et al., MODELING OF GATE LINE DELAY IN VERY LARGE ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 343-345
VIA HOLE TECHNOLOGY FOR THIN-FILM-TRANSISTOR CIRCUITS
Authors: GLESKOVA H WAGNER S ZHANG Q SHEN DS
Citation: H. Gleskova et al., VIA HOLE TECHNOLOGY FOR THIN-FILM-TRANSISTOR CIRCUITS, IEEE electron device letters, 18(11), 1997, pp. 523-525
INPLANE PHOTOCONDUCTIVITY IN AMORPHOUS-SILICON DOPING MULTILAYERS
Authors: CONDE JP SILVA M CHU V GLESKOVA H VASANTH K WAGNER S SHEN DS
Citation: Jp. Conde et al., INPLANE PHOTOCONDUCTIVITY IN AMORPHOUS-SILICON DOPING MULTILAYERS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(4), 1996, pp. 331-347
ELECTROPHOTOGRAPHICALLY PATTERNED THIN-FILM SILICON TRANSISTORS
Authors: GLESKOVA H KONENKAMP R WAGNER S SHEN DS
Citation: H. Gleskova et al., ELECTROPHOTOGRAPHICALLY PATTERNED THIN-FILM SILICON TRANSISTORS, IEEE electron device letters, 17(6), 1996, pp. 264-266
EQUILIBRATION AND STABILITY IN UNDOPED AMORPHOUS-SILICON
Authors: WAGNER S GLESKOVA H NAKATA J
Citation: S. Wagner et al., EQUILIBRATION AND STABILITY IN UNDOPED AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 407-414
ON THE LACK OF OBSERVABLE LIGHT-INDUCED H DIFFUSION NEAR ROOM-TEMPERATURE
Authors: BRANZ HM BULLOCK J ASHER S GLESKOVA H WAGNER S
Citation: Hm. Branz et al., ON THE LACK OF OBSERVABLE LIGHT-INDUCED H DIFFUSION NEAR ROOM-TEMPERATURE, Journal of non-crystalline solids, 200, 1996, pp. 441-444
ELECTROPHOTOGRAPHIC PATTERNING OF THIN-FILM SILICON ON GLASS FOIL
Authors: GLESKOVA H WAGNER S SHEN DS
Citation: H. Gleskova et al., ELECTROPHOTOGRAPHIC PATTERNING OF THIN-FILM SILICON ON GLASS FOIL, IEEE electron device letters, 16(10), 1995, pp. 418-420
ARE BOTH THERMAL AND LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS INA-SI-H DRIVEN BY ELECTRONS
Authors: GLESKOVA H WAGNER S
Citation: H. Gleskova et S. Wagner, ARE BOTH THERMAL AND LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS INA-SI-H DRIVEN BY ELECTRONS, Journal of non-crystalline solids, 190(1-2), 1995, pp. 157-162
PROPERTIES OF AU SIO2/A-SIH SOLAR-CELLS WITH WET OXIDE/
Authors: GLESKOVA H SKRYSHEVSKY VA BULLOCK JN WAGNER S STUCHLIK J
Citation: H. Gleskova et al., PROPERTIES OF AU SIO2/A-SIH SOLAR-CELLS WITH WET OXIDE/, Materials letters, 16(6), 1993, pp. 305-308
ISOLATING THE RATE OF LIGHT-INDUCED ANNEALING OF THE DANGLING-BOND DEFECTS IN A-SI-H
Authors: GLESKOVA H BULLOCK JN WAGNER S
Citation: H. Gleskova et al., ISOLATING THE RATE OF LIGHT-INDUCED ANNEALING OF THE DANGLING-BOND DEFECTS IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 183-186
CO2-LASER ANNEALING OF AL A-SI-H CONTACT
Authors: GLESKOVA H ILCHENKO VV SKRYSHEVSKY VA STRIKHA VI
Citation: H. Gleskova et al., CO2-LASER ANNEALING OF AL A-SI-H CONTACT, Czechoslovak journal of Physics, 43(2), 1993, pp. 169-178
KINETICS OF RECOVERY OF THE LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION
Authors: GLESKOVA H MORIN PA WAGNER S
Citation: H. Gleskova et al., KINETICS OF RECOVERY OF THE LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION, Applied physics letters, 62(17), 1993, pp. 2063-2065
Risultati: 1-13 |