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Results: 1-16 |
Results: 16
CALCULATION OF ENERGY DEPOSITION IN THIN RESIST FILMS OVER MULTILAYERSUBSTRATES
Authors: RAPTIS I GLEZOS N ROSENBUSCH A PATSIS G ARGITIS P
Citation: I. Raptis et al., CALCULATION OF ENERGY DEPOSITION IN THIN RESIST FILMS OVER MULTILAYERSUBSTRATES, Microelectronic engineering, 42, 1998, pp. 171-174
E-BEAM PROXIMITY CORRECTION FOR NEGATIVE TONE CHEMICALLY AMPLIFIED RESISTS TAKING INTO ACCOUNT POST-BAKE EFFECTS
Authors: GLEZOS N PATSIS GP ROSENBUSCH A CUI Z
Citation: N. Glezos et al., E-BEAM PROXIMITY CORRECTION FOR NEGATIVE TONE CHEMICALLY AMPLIFIED RESISTS TAKING INTO ACCOUNT POST-BAKE EFFECTS, Microelectronic engineering, 42, 1998, pp. 319-322
THICKNESS DETERMINATION OF THIN-FILMS BASED ON X-RAY SIGNAL DECAY LAW
Authors: KALTSAS G GLEZOS N VALAMONTES E NASSIOPOULOU AG
Citation: G. Kaltsas et al., THICKNESS DETERMINATION OF THIN-FILMS BASED ON X-RAY SIGNAL DECAY LAW, Surface and interface analysis, 26(12), 1998, pp. 876-884
THEORETICAL DISCUSSION OF DIFFUSION EFFECTS IN NEGATIVE CHEMICALLY AMPLIFIED RESISTS BASED ON CONTRAST CURVE SIMULATION
Authors: PATSIS GP MENEGHINI G GLEZOS N ARGITIS P
Citation: Gp. Patsis et al., THEORETICAL DISCUSSION OF DIFFUSION EFFECTS IN NEGATIVE CHEMICALLY AMPLIFIED RESISTS BASED ON CONTRAST CURVE SIMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2561-2564
ANOMALOUS ELECTRICAL-CONDUCTION IN SILICON N(-I-N(+) RESISTORS AT LOW-TEMPERATURES())
Authors: TSAMAKIS D GLEZOS N
Citation: D. Tsamakis et N. Glezos, ANOMALOUS ELECTRICAL-CONDUCTION IN SILICON N(-I-N(+) RESISTORS AT LOW-TEMPERATURES()), Semiconductor science and technology, 12(6), 1997, pp. 672-677
GEL FORMATION THEORY APPROACH FOR THE MODELING OF NEGATIVE CHEMICALLYAMPLIFIED E-BEAM RESISTS
Authors: PATSIS G RAPTIS I GLEZOS N ARGITIS P HATZAKIS M AIDINIS CJ GENTILI M MAGGIORA R
Citation: G. Patsis et al., GEL FORMATION THEORY APPROACH FOR THE MODELING OF NEGATIVE CHEMICALLYAMPLIFIED E-BEAM RESISTS, Microelectronic engineering, 35(1-4), 1997, pp. 157-160
STATIC CURRENT-VOLTAGE CHARACTERISTICS OF SILICON N(-I-N(+) RESISTORSAT LIQUID-HELIUM TEMPERATURES())
Authors: TSAMAKIS D GLEZOS N
Citation: D. Tsamakis et N. Glezos, STATIC CURRENT-VOLTAGE CHARACTERISTICS OF SILICON N(-I-N(+) RESISTORSAT LIQUID-HELIUM TEMPERATURES()), Journal de physique. IV, 6(C3), 1996, pp. 93-98
APPLICATION OF A REACTION-DIFFUSION MODEL FOR NEGATIVE CHEMICALLY AMPLIFIED RESISTS TO DETERMINE ELECTRON-BEAM PROXIMITY CORRECTION PARAMETERS
Authors: GLEZOS N PATSIS GP RAPTIS I ARGITIS P GENTILI M GRELLA L
Citation: N. Glezos et al., APPLICATION OF A REACTION-DIFFUSION MODEL FOR NEGATIVE CHEMICALLY AMPLIFIED RESISTS TO DETERMINE ELECTRON-BEAM PROXIMITY CORRECTION PARAMETERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4252-4256
A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR BASED ON THE BOLTZMANN TRANSPORT-EQUATION
Authors: GLEZOS N RAPTIS I
Citation: N. Glezos et I. Raptis, A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR BASED ON THE BOLTZMANN TRANSPORT-EQUATION, IEEE transactions on computer-aided design of integrated circuits and systems, 15(1), 1996, pp. 92-102
DETERMINATION OF ACID DIFFUSION AND ENERGY DEPOSITION PARAMETERS BY POINT E-BEAM EXPOSURE IN CHEMICALLY AMPLIFIED RESISTS
Authors: RAPTIS I GRELLA L ARGITIS P GENTILI M GLEZOS N PETROCCO G
Citation: I. Raptis et al., DETERMINATION OF ACID DIFFUSION AND ENERGY DEPOSITION PARAMETERS BY POINT E-BEAM EXPOSURE IN CHEMICALLY AMPLIFIED RESISTS, Microelectronic engineering, 30(1-4), 1996, pp. 295-299
APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION IN THE THICKNESS DETERMINATION OF THIN-FILMS
Authors: KALTSAS G GLEZOS N VALAMONTES E NASSIOPOULOS AG
Citation: G. Kaltsas et al., APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION IN THE THICKNESS DETERMINATION OF THIN-FILMS, Mikrochimica acta, 1996, pp. 349-353
ADVANCED EPOXY NOVOLAC RESIST FOR FAST HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY
Authors: ARGITIS P RAPTIS I AIDINIS CJ GLEZOS N BACIOCCHI M EVERETT J HATZAKIS M
Citation: P. Argitis et al., ADVANCED EPOXY NOVOLAC RESIST FOR FAST HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3030-3034
LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR
Authors: GLEZOS N RAPTIS I HATZAKIS M
Citation: N. Glezos et al., LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR, Microelectronic engineering, 26(3-4), 1995, pp. 131-140
LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR
Authors: GLEZOS N RAPTIS I HATZAKIS M
Citation: N. Glezos et al., LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR, Microelectronic engineering, 23(1-4), 1994, pp. 417-420
ANALYTICAL EVALUATION OF THE ENERGY DEPOSITION FUNCTION IN ELECTRON-BEAM LITHOGRAPHY IN THE CASE OF A COMPOSITE SUBSTRATE
Authors: RAPTIS I GLEZOS N HATZAKIS M
Citation: I. Raptis et al., ANALYTICAL EVALUATION OF THE ENERGY DEPOSITION FUNCTION IN ELECTRON-BEAM LITHOGRAPHY IN THE CASE OF A COMPOSITE SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2754-2757
USE OF THE BOLTZMANN TRANSPORT-EQUATION FOR THE EVALUATION OF ENERGY DEPOSITION IN THE CASE OF ELECTRON SENSITIVE RESIST FILMS OVER COMPOSITE SUBSTRATES
Authors: RAPTIS I GLEZOS N HATZAKIS M
Citation: I. Raptis et al., USE OF THE BOLTZMANN TRANSPORT-EQUATION FOR THE EVALUATION OF ENERGY DEPOSITION IN THE CASE OF ELECTRON SENSITIVE RESIST FILMS OVER COMPOSITE SUBSTRATES, Microelectronic engineering, 21(1-4), 1993, pp. 289-292
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