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Results: 1-10 |
Results: 10
ACTUATOR SENSOR TECHNOLOGY ON ELECTRONIC GRADE DIAMOND FILMS
Authors: GLUCHE P LEUNER R VESCAN A EBERT W KOHN E REMBE C DERWIESCHE S HOFER EP
Citation: P. Gluche et al., ACTUATOR SENSOR TECHNOLOGY ON ELECTRONIC GRADE DIAMOND FILMS, Microsystem technologies, 5(1), 1998, pp. 38-43
APPLICATION OF HIGHLY ORIENTED, PLANAR DIAMOND (HOD) FILMS OF HIGH MECHANICAL STRENGTH IN SENSOR TECHNOLOGIES
Authors: GLUCHE P ADAMSCHIK M VESCAN A EBERT W SZUCS F FECHT HJ FLOTER A ZACHAI R KOHN E
Citation: P. Gluche et al., APPLICATION OF HIGHLY ORIENTED, PLANAR DIAMOND (HOD) FILMS OF HIGH MECHANICAL STRENGTH IN SENSOR TECHNOLOGIES, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 779-782
HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF DIAMOND SCHOTTKY DIODE
Authors: VESCAN A DAUMILLER I GLUCHE P EBERT W KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF DIAMOND SCHOTTKY DIODE, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 581-584
HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER
Authors: EBERT W VESCAN A GLUCHE P BORST T KOHN E
Citation: W. Ebert et al., HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 329-332
HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF PULSE-DOPED DIAMOND MESFET
Authors: VESCAN A GLUCHE P EBERT W KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF PULSE-DOPED DIAMOND MESFET, IEEE electron device letters, 18(5), 1997, pp. 222-224
DIAMOND SURFACE-CHANNEL FET STRUCTURE WITH 200 V BREAKDOWN VOLTAGE
Authors: GLUCHE P ALEKSOV A VESCAN A EBERT W KOHN E
Citation: P. Gluche et al., DIAMOND SURFACE-CHANNEL FET STRUCTURE WITH 200 V BREAKDOWN VOLTAGE, IEEE electron device letters, 18(11), 1997, pp. 547-549
VERY HIGH-TEMPERATURE OPERATION OF DIAMOND SCHOTTKY DIODE
Authors: VESCAN A DAUMILLER I GLUCHE P EBERT W KOHN E
Citation: A. Vescan et al., VERY HIGH-TEMPERATURE OPERATION OF DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 18(11), 1997, pp. 556-558
BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON DIOXIDE
Authors: IRWIN MD PANTANO CG GLUCHE P KOHN E
Citation: Md. Irwin et al., BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON DIOXIDE, Applied physics letters, 71(5), 1997, pp. 716-718
HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE
Authors: GLUCHE P WOLTER SD BORST TH EBERT W VESCAN A KOHN E
Citation: P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
SELECTIVELY GROWN OHMIC CONTACTS TO DELTA-DOPED DIAMOND FILMS
Authors: VESCAN A GLUCHE P EBERT W KOHN E
Citation: A. Vescan et al., SELECTIVELY GROWN OHMIC CONTACTS TO DELTA-DOPED DIAMOND FILMS, Electronics Letters, 32(15), 1996, pp. 1419-1421
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