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Results:
1-15
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Results: 15
Authors:
KAABI L
BENBRAHIM J
REMAKI B
GONTRAND C
ELOMARI H
BUREAU JC
SASSI Z
BALLAND B
Citation: L. Kaabi et al., THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 49-52
Authors:
CHAUVET D
CALMON F
GONTRAND C
Citation: D. Chauvet et al., POWER INTEGRATION - THE ORIGIN OF THE PARASITIC EFFECTS INDUCED BY ANINSULATED GATE BIPOLAR-TRANSISTOR ON ITS CONTROL AND PROTECTION LOGIC, Semiconductor science and technology (Print), 13(10), 1998, pp. 1193-1204
Authors:
KAABI L
GONTRAND C
BUREAU JC
SASSI Z
BENBRAHIM J
BALLAND B
Citation: L. Kaabi et al., RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS, Annales de chimie, 23(1-2), 1998, pp. 359-364
Authors:
TABIKH S
GONTRAND C
NOUGIER JP
Citation: S. Tabikh et al., TRANSIENT SOLUTION DETERMINATION OF THE BOLTZMANN-EQUATION USING A POLYNOMIAL EXPANSION, Journal de physique. III, 7(2), 1997, pp. 281-289
Authors:
GONTRAND C
SELLITTO P
TABIKH S
LATRECHE S
KAMINSKI A
Citation: C. Gontrand et al., DIFFUSION AND ELECTRICAL ACTIVATION AFTER A RAPID THERMAL ANNEALING OF AN AS AND B-CO-IMPLANTED POLYSILICON LAYER, Journal de physique. III, 7(1), 1997, pp. 47-58
Authors:
KAABI L
GONTRAND C
PINARD P
BALLAND B
REMAKI B
GAMOUDI M
GUILLAUD G
Citation: L. Kaabi et al., IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION, Synthetic metals, 90(3), 1997, pp. 217-221
Authors:
GRADINARIU I
GONTRAND C
Citation: I. Gradinariu et C. Gontrand, A FAST-SETTLING 3 V CMOS BUFFER AMPLIFIER, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 43(6), 1996, pp. 433-437
Authors:
SEMMACHE B
MERABET A
GONTRAND C
LAUGIER A
Citation: B. Semmache et al., ABOUT BORON AND ARSENIC DIFFUSIONS IN POLYCRYSTALLINE SILICON UNDER RAPID THERMAL-OXIDATION, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 41-45
Authors:
KAABI L
GONTRAND C
LEMITI M
REMAKI B
BALLAND B
MEDDEB J
MARTY O
Citation: L. Kaabi et al., INVESTIGATION OF BF2-FILMS - REDISTRIBUTION OF FLUORINE AND BORON UNDER RAPID THERMAL ANNEALING( IMPLANTS IN SILICON THROUGH SIO2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 68-73
Authors:
KAABI L
REMAKI B
GONTRAND C
LO PF
BALLAND B
Citation: L. Kaabi et al., THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 196-200
Authors:
GRADINARIU I
GONTRAND C
Citation: I. Gradinariu et C. Gontrand, A HIGH-PERFORMANCE LATERAL PNP TRANSISTOR STRUCTURE, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 666-667
Authors:
GONTRAND C
HADDAB Y
KAABI L
MERABET A
Citation: C. Gontrand et al., A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY, Semiconductor science and technology, 10(10), 1995, pp. 1393-1403
Authors:
MERABET A
GONTRAND C
Citation: A. Merabet et C. Gontrand, DOPANT REDISTRIBUTION DURING RAPID THERMAL ANNEALING IN A SELF-ALIGNED POLYSILICON EMITTER BIPOLAR STRUCTURE COMPATIBLE WITH A COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Physica status solidi. a, Applied research, 145(1), 1994, pp. 77-88
Authors:
KAABI L
GONTRAND C
REMAKI B
SEIGNEUR F
BALLAND B
Citation: L. Kaabi et al., ANALYSIS OF LOW-ENERGY BORON IMPLANTS IN SILICON THROUGH SIO2-FILMS -IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION, Microelectronics, 25(7), 1994, pp. 567-576
Authors:
KAABI L
GONTRAND C
LEMITI M
BALLAND B
Citation: L. Kaabi et al., IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON THROUGH SIO2-FILMS, Physica status solidi. a, Applied research, 138(1), 1993, pp. 99-109
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1-15
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