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Results: 1-25 | 26-50 | 51-57
Results: 26-50/57
LOW-TEMPERATURE GROWTH OF 850-NM QUANTUM-WELL MODULATORS FOR MONOLITHIC INTEGRATION TO VERY LARGE-SCALE INTEGRATED ELECTRONICS ON GAAS
Authors: CUNNINGHAM JE GOOSSEN KW JAN WY WALKER JA PATHAK RN
Citation: Je. Cunningham et al., LOW-TEMPERATURE GROWTH OF 850-NM QUANTUM-WELL MODULATORS FOR MONOLITHIC INTEGRATION TO VERY LARGE-SCALE INTEGRATED ELECTRONICS ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 653-656
GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS
Authors: GOOSSEN KW WALKER JA DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D BACON DD DAHRINGER D CHIROVSKY LMF LENTINE AL MILLER DAB
Citation: Kw. Goossen et al., GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS, IEEE photonics technology letters, 7(4), 1995, pp. 360-362
3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS- 375 MB S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT/
Authors: KRISHNAMOORTHY AV LENTINE AL GOOSSEN KW WALKER JA WOODWARD TK FORD JE APLIN GF DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D DAHRINGER D CHIROVSKY LMF MILLER DAB
Citation: Av. Krishnamoorthy et al., 3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS- 375 MB S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT/, IEEE photonics technology letters, 7(11), 1995, pp. 1288-1290
OPTICAL BANDWIDTH CONSIDERATIONS IN P-I-N MULTIPLE-QUANTUM-WELL MODULATORS
Authors: GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Kw. Goossen et al., OPTICAL BANDWIDTH CONSIDERATIONS IN P-I-N MULTIPLE-QUANTUM-WELL MODULATORS, Journal of lightwave technology, 13(3), 1995, pp. 461-464
ELECTRIC-FIELD-INDUCED EXCITON IONIZATION IN A GAAS ALGAAS SUPERLATTICE/
Authors: VONPLESSEN G MEIER T KOCH M FELDMANN J KOCH SW THOMAS P GOBEL EO GOOSSEN KW KUO JM KOPF RF
Citation: G. Vonplessen et al., ELECTRIC-FIELD-INDUCED EXCITON IONIZATION IN A GAAS ALGAAS SUPERLATTICE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1759-1762
MONOLITHIC INTEGRATION OF 850 NM QUANTUM-WELL MODULATORS TO VERY LARGE-SCALE INTEGRATED ELECTRONICS ON GAAS
Authors: CUNNINGHAM JE GOOSSEN KW JAN WY WALKER JA PATHAK RN
Citation: Je. Cunningham et al., MONOLITHIC INTEGRATION OF 850 NM QUANTUM-WELL MODULATORS TO VERY LARGE-SCALE INTEGRATED ELECTRONICS ON GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 1363-1367
ANTIRESONANT FABRY-PEROT QUANTUM-WELL MODULATOR TO ACTIVELY MODELOCK AND SYNCHRONIZE SOLID-STATE LASERS
Authors: BROVELLI LR LANKER M KELLER U GOOSSEN KW WALKER JA CUNNINGHAM JE
Citation: Lr. Brovelli et al., ANTIRESONANT FABRY-PEROT QUANTUM-WELL MODULATOR TO ACTIVELY MODELOCK AND SYNCHRONIZE SOLID-STATE LASERS, Electronics Letters, 31(5), 1995, pp. 381-382
RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS
Authors: KRISHNAMOORTHY AV WOODWARD TK NOVOTNY RA GOOSSEN KW WALKER JA LENTINE AL DASARO LA HUI SP TSENG B LEIBENGUTH R KOSSIVES D DAHRINGER D CHIROVSKY LMF APLIN GF ROZIER RG KIAMILEV FE MILLER DAB
Citation: Av. Krishnamoorthy et al., RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS, Electronics Letters, 31(22), 1995, pp. 1917-1918
HIGH-YIELD, LOW-COST FABRY-PEROT MODULATORS UTILIZING CORRECTABLE PARTIAL ANTIREFLECTION COATINGS
Authors: GOOSSEN KW CUNNINGHAM JE JAN WY CENTANNI J
Citation: Kw. Goossen et al., HIGH-YIELD, LOW-COST FABRY-PEROT MODULATORS UTILIZING CORRECTABLE PARTIAL ANTIREFLECTION COATINGS, Applied physics letters, 66(9), 1995, pp. 1041-1043
NORMALLY ON GAAS ALAS MULTIPLE-QUANTUM-WELL FABRY-PEROT TRANSMISSION MODULATOR WITH ON/OFF CONTRAST RATIOS GREATER-THAN-7.4/
Authors: LIN CH GOOSSEN KW SADRA K MEESE JM WENG CJ
Citation: Ch. Lin et al., NORMALLY ON GAAS ALAS MULTIPLE-QUANTUM-WELL FABRY-PEROT TRANSMISSION MODULATOR WITH ON/OFF CONTRAST RATIOS GREATER-THAN-7.4/, Applied physics letters, 66(10), 1995, pp. 1222-1224
GROWTH OF GAAS LIGHT MODULATORS ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FOR 850 NM OPTICAL INTERCONNECTS
Authors: CUNNINGHAM JE GOOSSEN KW WALKER JA JAN W SANTOS M MILLER DAB
Citation: Je. Cunningham et al., GROWTH OF GAAS LIGHT MODULATORS ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FOR 850 NM OPTICAL INTERCONNECTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1246-1250
SILICON MODULATOR BASED ON MECHANICALLY-ACTIVE ANTIREFLECTION LAYER WITH 1 MBIT SEC CAPABILITY FOR FIBER-IN-THE-LOOP APPLICATIONS/
Authors: GOOSSEN KW WALKER JA ARNEY SC
Citation: Kw. Goossen et al., SILICON MODULATOR BASED ON MECHANICALLY-ACTIVE ANTIREFLECTION LAYER WITH 1 MBIT SEC CAPABILITY FOR FIBER-IN-THE-LOOP APPLICATIONS/, IEEE photonics technology letters, 6(9), 1994, pp. 1119-1121
STACKED-DIODE ELECTROABSORPTION MODULATOR
Authors: GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Kw. Goossen et al., STACKED-DIODE ELECTROABSORPTION MODULATOR, IEEE photonics technology letters, 6(8), 1994, pp. 936-938
INGAAS-INP-P-I (MQW)-N SURFACE-NORMAL ELECTROABSORPTION MODULATORS EXHIBITING BETTER THE 8 1-CONTRAST RATIO FOR 1.55-MU-M APPLICATIONS GROWN BY GAS-SOURCE MBE/
Authors: PATHAK RN GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Rn. Pathak et al., INGAAS-INP-P-I (MQW)-N SURFACE-NORMAL ELECTROABSORPTION MODULATORS EXHIBITING BETTER THE 8 1-CONTRAST RATIO FOR 1.55-MU-M APPLICATIONS GROWN BY GAS-SOURCE MBE/, IEEE photonics technology letters, 6(12), 1994, pp. 1439-1441
GAS-COMPOSITION DEPENDENCE OF SILICON-NITRIDE USED AS GALLIUM DIFFUSION BARRIER DURING GAAS MOLECULAR-BEAM EPITAXY GROWTH ON SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR
Authors: WALKER JA GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Ja. Walker et al., GAS-COMPOSITION DEPENDENCE OF SILICON-NITRIDE USED AS GALLIUM DIFFUSION BARRIER DURING GAAS MOLECULAR-BEAM EPITAXY GROWTH ON SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR, Journal of electronic materials, 23(10), 1994, pp. 1081-1083
CARRIER ESCAPE TUNNELING OUT OF SHALLOW MULTIPLE-QUANTUM WELLS STUDIED BY TRANSIENT 4-WAVE-MIXING
Authors: VONPLESSEN G FELDMANN J GOOSSEN KW SCHLICHTHERLE B GOBEL EO MILLER DAB CUNNINGHAM JE
Citation: G. Vonplessen et al., CARRIER ESCAPE TUNNELING OUT OF SHALLOW MULTIPLE-QUANTUM WELLS STUDIED BY TRANSIENT 4-WAVE-MIXING, Semiconductor science and technology, 9(5), 1994, pp. 523-525
INFLUENCE OF SCATTERING ON THE FORMATION OF WANNIER-STARK LADDERS ANDBLOCK OSCILLATIONS IN SEMICONDUCTOR SUPERLATTICES
Authors: VONPLESSEN G MEIER T FELDMANN J GOBEL EO THOMAS P GOOSSEN KW KUO JM KOPF RF
Citation: G. Vonplessen et al., INFLUENCE OF SCATTERING ON THE FORMATION OF WANNIER-STARK LADDERS ANDBLOCK OSCILLATIONS IN SEMICONDUCTOR SUPERLATTICES, Physical review. B, Condensed matter, 49(19), 1994, pp. 14058-14061
STRAIN AND AS SPECIES-DEPENDENT GROUP-V INCORPORATION IN GAASP DURINGGAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: CUNNINGHAM JE SANTOS MB GOOSSEN KW CHIU TH WILLIAMS MD JAN W STORZ F
Citation: Je. Cunningham et al., STRAIN AND AS SPECIES-DEPENDENT GROUP-V INCORPORATION IN GAASP DURINGGAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 282-286
NORMALLY-ON GAAS ALAS MULTIPLE-WELL FABRY-PEROT REFLECTION MODULATORSFOR LARGE 2-DIMENSIONAL ARRAYS/
Authors: LIN CH GOOSSEN KW SADRA K MEESE JM
Citation: Ch. Lin et al., NORMALLY-ON GAAS ALAS MULTIPLE-WELL FABRY-PEROT REFLECTION MODULATORSFOR LARGE 2-DIMENSIONAL ARRAYS/, Applied physics letters, 65(10), 1994, pp. 1242-1244
ELECTROABSORPTION IN ULTRANARROW-BARRIER GAAS ALGAAS MULTIPLE-QUANTUM-WELL MODULATORS/
Authors: GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Kw. Goossen et al., ELECTROABSORPTION IN ULTRANARROW-BARRIER GAAS ALGAAS MULTIPLE-QUANTUM-WELL MODULATORS/, Applied physics letters, 64(9), 1994, pp. 1071-1073
INGAAS GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: LEE SW CHU KU KIM SW PARK S KWON OD GOOSSEN KW PEI SS
Citation: Sw. Lee et al., INGAAS GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Applied physics letters, 64(23), 1994, pp. 3065-3067
DIMERIZATION INDUCED INCORPORATION NONLINEARITIES IN GAASP
Authors: CUNNINGHAM JE SANTOS MB GOOSSEN KW WILLIAMS MD JAN W
Citation: Je. Cunningham et al., DIMERIZATION INDUCED INCORPORATION NONLINEARITIES IN GAASP, Applied physics letters, 64(18), 1994, pp. 2418-2420
PICOSECOND CARRIER ESCAPE BY RESONANT-TUNNELING IN PSEUDOMORPHIC INGAAS GAASP QUANTUM-WELL MODULATORS/
Authors: FROBERG NM JOHNSON AM GOOSSEN KW CUNNINGHAM JE SANTOS MB JAN WY WOOD TH BURRUS CA
Citation: Nm. Froberg et al., PICOSECOND CARRIER ESCAPE BY RESONANT-TUNNELING IN PSEUDOMORPHIC INGAAS GAASP QUANTUM-WELL MODULATORS/, Applied physics letters, 64(13), 1994, pp. 1705-1707
GAAS 850-NM MODULATORS SOLDER-BONDED TO SILICON
Authors: GOOSSEN KW CUNNINGHAM JE JAN WY
Citation: Kw. Goossen et al., GAAS 850-NM MODULATORS SOLDER-BONDED TO SILICON, IEEE photonics technology letters, 5(7), 1993, pp. 776-778
INDEPENDENCE OF ABSORPTION COEFFICIENT-LINEWIDTH PRODUCT TO MATERIAL SYSTEM FOR MULTIPLE-QUANTUM WELLS WITH EXCITONS FROM 850 NM TO 1064 NM
Authors: GOOSSEN KW SANTOS MB CUNNINGHAM JE JAN WY
Citation: Kw. Goossen et al., INDEPENDENCE OF ABSORPTION COEFFICIENT-LINEWIDTH PRODUCT TO MATERIAL SYSTEM FOR MULTIPLE-QUANTUM WELLS WITH EXCITONS FROM 850 NM TO 1064 NM, IEEE photonics technology letters, 5(12), 1993, pp. 1392-1394
Risultati: 1-25 | 26-50 | 51-57