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Results: 1-25/27
Authors:
GU SL
FUCHIGAMI LH
CHENG LL
GUAK SH
SHIN C
Citation: Sl. Gu et al., EFFECTS OF ANTITRANSPIRANT AND LEACHING ON MEDIUM SOLUTION OSMOTIC POTENTIAL, LEAF STOMATAL STATUS, TRANSPIRATION, ABSCISIC-ACID CONTENT AND PLANT-GROWTH IN EARLY-GIRL TOMATO PLANTS (LYCOPERSICON-ESCULENTUM), Journal of horticultural science & biotechnology, 73(4), 1998, pp. 473-477
Authors:
LIU JL
LU Y
SHI Y
GU SL
JIANG RL
WANG F
ZHENG YD
Citation: Jl. Liu et al., FABRICATION OF SILICON NANOWIRES, Applied physics A: Materials science & processing, 66(5), 1998, pp. 539-541
Authors:
LIU JL
LU Y
SHI Y
GU SL
JIANG RL
WANG F
BU HM
ZHENG YD
Citation: Jl. Liu et al., STUDY ON THERMAL-OXIDATION OF SI NANOWIRES, Physica status solidi. a, Applied research, 168(2), 1998, pp. 441-446
Authors:
GU SL
WANG RH
JIANG N
ZHU SM
ZHANG R
SHI Y
HU LQ
ZHENG YD
Citation: Sl. Gu et al., STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 183(1-2), 1998, pp. 117-123
Authors:
JIANG RL
GU SL
JIANG N
LI Z
XU J
ZHU SM
HU LQ
ZHENG YD
Citation: Rl. Jiang et al., SIGE GE HETEROJUNCTION INFRARED DETECTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 968-970
Authors:
JIANG RL
JIANG N
GU SL
LI Z
XU J
ZHU SM
HU LQ
ZHENG YD
Citation: Rl. Jiang et al., PHOTOELECTRIC PROPERTIES OF SI-SI1-XGEX-GE HETEROSTRUCTURES FOR INFRARED DETECTOR, Chinese Physics Letters, 14(11), 1997, pp. 876-878
Authors:
GU SL
ZHU XM
JIANG N
SHI Y
ZHANG R
ZHENG YD
Citation: Sl. Gu et al., SIH4 AND GEH4 CHEMICAL-VAPOR-DEPOSITION OF GESI GE HETEROSTRUCTURES/, Applied surface science, 115(1), 1997, pp. 28-30
Authors:
GU SL
ZHENG YD
ZHANG R
ZHU SM
Citation: Sl. Gu et al., COMPRESSIVE AND TENSILE STRAIN EFFECTS ON ATOMIC DISTRIBUTION IN STRAINED SI-GE ALLOYS, Physica status solidi. a, Applied research, 160(1), 1997, pp. 3-10
Authors:
WANG F
SHI Y
LIU JL
LU Y
GU SL
ZHENG YD
Citation: F. Wang et al., HIGHLY SELECTIVE CHEMICAL ETCHING OF SI VS SI1-XGEX USING NH4OH SOLUTION, Journal of the Electrochemical Society, 144(3), 1997, pp. 37-39
Authors:
GU SL
ZHENG YD
ZHANG R
HAN P
ZHU SM
Citation: Sl. Gu et al., STRESS PROPERTY OF SIGE ALLOY DEPOSITED BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(6A), 1996, pp. 3327-3330
Authors:
GU SL
ZHENG YD
ZHANG R
WANG RH
Citation: Sl. Gu et al., GROWTH-KINETICS STUDY OF SIGE ALLOYS DEPOSITED BY RAPID THERMAL-PROCESS, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION, Physica. B, Condensed matter, 229(1), 1996, pp. 74-78
Authors:
GU SL
WANG RH
ZHANG R
ZHENG YD
Citation: Sl. Gu et al., SIMULATION-MODEL TO VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SIGE ALLOY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3256-3260
Authors:
ZHANG R
YANG K
QIN LH
SHEN B
SHI HT
SHI Y
GU SL
ZHENG YD
HUANG ZC
CHEN JC
Citation: R. Zhang et al., OPTICAL-PROPERTIES OF GAN FILM GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 840-843
Authors:
SHI Y
LIU JL
WANG F
LU Y
ZHANG R
GU SL
HAN P
HU LQ
ZHENG YD
LIN CY
DU DA
Citation: Y. Shi et al., ULTRAFINE SILICON QUANTUM WIRES FABRICATED BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1194-1198
Authors:
LIU JL
SHI Y
WANG F
LU Y
GU SL
ZHENG YD
Citation: Jl. Liu et al., REALIZATION OF SILICON QUANTUM WIRES BASED ON SI SIGE/SI HETEROSTRUCTURE/, Zeitschrift fur Physik. B, Condensed matter, 100(4), 1996, pp. 489-491
Authors:
GU SL
Citation: Sl. Gu, THE EMERGENCE OF NEW TECHNOLOGY ENTERPRISES IN CHINA - A STUDY OF ENDOGENOUS CAPABILITY BUILDING VIA RESTRUCTURING, Journal of development studies, 32(4), 1996, pp. 475-505
Authors:
LIU JL
SHI Y
WANG F
LU Y
GU SL
ZHANG R
ZHENG YD
Citation: Jl. Liu et al., STUDY OF DRY OXIDATION OF TRIANGLE-SHAPED SILICON NANOSTRUCTURE, Applied physics letters, 69(12), 1996, pp. 1761-1763
Authors:
LIU JL
SHI Y
WANG F
LU Y
ZHANG R
HAN P
GU SL
ZHENG YD
Citation: Jl. Liu et al., A METHOD FOR FABRICATING SILICON QUANTUM WIRES BASED ON SIGE SI HETEROSTRUCTURE/, Applied physics letters, 68(3), 1996, pp. 352-354
Authors:
GU SL
FUCHIGAMI LH
GUAK SH
SHIN C
Citation: Sl. Gu et al., EFFECTS OF SHORT-TERM WATER-STRESS, HYDROPHILIC POLYMER AMENDMENT, AND ANTITRANSPIRANT ON STOMATAL STATUS, TRANSPIRATION, WATER-LOSS, AND GROWTH IN BETTER BOY TOMATO PLANTS, Journal of the American Society for Horticultural Science, 121(5), 1996, pp. 831-837
Authors:
GU SL
LOMBARD PB
PRICE SF
Citation: Sl. Gu et al., EFFECT OF SHADING AND NITROGEN-SOURCE ON GROWTH, TISSUE AMMONIUM AND NITRATE STATUS, AND INFLORESCENCE NECROSIS IN PINOT-NOIR GRAPEVINES, American journal of enology and viticulture, 47(2), 1996, pp. 173-180
Authors:
GU SL
WANG RH
ZHANG R
QIN LH
SHI Y
ZHU SM
ZHENG YD
Citation: Sl. Gu et al., SUBSTRATE-TEMPERATURE AND GE CONCENTRATION-DEPENDENCE OF THE MICROSTRUCTURE SI-GE ALLOYS, Journal of physics. Condensed matter, 6(31), 1994, pp. 6163-6168
Authors:
QIN LH
ZHENG YD
ZHANG R
GU SL
SHI HT
FENG D
Citation: Lh. Qin et al., ELLIPSOMETRIC STUDIES OF POROUS SILICON, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 163-165
Authors:
GU SL
ZHANG R
HAN P
WANG RH
ZHONG PX
ZHENG YD
Citation: Sl. Gu et al., RAMAN-STUDY OF STRAINED SIGE LAYERS, Applied surface science, 81(4), 1994, pp. 431-434
Authors:
GU SL
ZHENG YD
ZHANG R
WANG RH
ZHONG PX
Citation: Sl. Gu et al., GE COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE DEPOSITION OF SIGE LAYERS, Journal of applied physics, 75(10), 1994, pp. 5382-5384
Authors:
GU SL
LOMBARD PB
PRICE SF
Citation: Sl. Gu et al., INFLORESCENCE NECROSIS INDUCED FROM AMMONIUM INCUBATION AND DETERRED BY ALPHA-KETO-GLUTARATE AND AMMONIUM ASSIMILATION IN PINOT-NOIR GRAPEVINES, American journal of enology and viticulture, 45(2), 1994, pp. 155-160