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Results: 1-25 | 26-32
Results: 1-25/32
Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy
Authors: McKay, HA Feenstra, RM Schmidtling, T Pohl, UW Geisz, JF
Citation: Ha. Mckay et al., Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy, J VAC SCI B, 19(4), 2001, pp. 1644-1649
Band anticrossing in III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Xin, HP Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
Alternative boron precursors for BGaAs epitaxy
Authors: Geisz, JF Friedman, DJ Kurtz, S Reedy, RC Barber, G
Citation: Jf. Geisz et al., Alternative boron precursors for BGaAs epitaxy, J ELEC MAT, 30(11), 2001, pp. 1387-1391
Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301
Authors: Perkins, JD Mascarenhas, A Geisz, JF Friedman, DJ
Citation: Jd. Perkins et al., Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301, PHYS REV B, 6412(12), 2001, pp. 1301
Reply to "Comment on 'Phonon modes in spontaneously ordered GaInP2 studiedby micro-Raman measurements' " - art. no. 247202
Authors: Mascarenhas, A Cheong, HM Alsina, F Geisz, JF Olson, JM
Citation: A. Mascarenhas et al., Reply to "Comment on 'Phonon modes in spontaneously ordered GaInP2 studiedby micro-Raman measurements' " - art. no. 247202, PHYS REV B, 6324(24), 2001, pp. 7202-NIL_642
Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-xNx - art. no. 085205
Authors: Zhang, Y Mascarenhas, A Geisz, JF Xin, HP Tu, CW
Citation: Y. Zhang et al., Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-xNx - art. no. 085205, PHYS REV B, 6308(8), 2001, pp. 5205
Epitaxial growth of BGaAs and BGaInAs by MOCVD
Authors: Geisz, JF Friedman, DJ Kurtz, S Olson, JM Swartzlander, AB Reedy, RC Norman, AG
Citation: Jf. Geisz et al., Epitaxial growth of BGaAs and BGaInAs by MOCVD, J CRYST GR, 225(2-4), 2001, pp. 372-376
Gamma-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed byresonant Raman scattering
Authors: Seong, MJ Mascarenhas, A Geisz, JF
Citation: Mj. Seong et al., Gamma-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed byresonant Raman scattering, APPL PHYS L, 79(9), 2001, pp. 1297-1299
Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in GaxIn1-xP alloys
Authors: Zhang, Y Mascarenhas, A Smith, S Geisz, JF Olson, JM Hanna, M
Citation: Y. Zhang et al., Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth in GaxIn1-xP alloys, PHYS REV B, 61(15), 2000, pp. 9910-9912
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Nauka, C
Citation: W. Shan et al., Effect of nitrogen on the electronic band structure of group III-N-V alloys, PHYS REV B, 62(7), 2000, pp. 4211-4214
Resonant Raman scattering in spontaneously ordered GaInP2
Authors: Cheong, HM Mascarenhas, A Geisz, JF Olson, JM
Citation: Hm. Cheong et al., Resonant Raman scattering in spontaneously ordered GaInP2, PHYS REV B, 62(3), 2000, pp. 1536-1539
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
Authors: Yu, KM Walukiewicz, W Shan, W Ager, JW Wu, J Haller, EE Geisz, JF Friedman, DJ Olson, JM
Citation: Km. Yu et al., Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys, PHYS REV B, 61(20), 2000, pp. R13337-R13340
Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering
Authors: Cheong, HM Zhang, Y Mascarenhas, A Geisz, JF
Citation: Hm. Cheong et al., Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering, PHYS REV B, 61(20), 2000, pp. 13687-13690
Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells
Authors: Friedman, DJ Norman, AG Geisz, JF Kurtz, SR
Citation: Dj. Friedman et al., Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells, J CRYST GR, 208(1-4), 2000, pp. 11-17
Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Ager, JW Haller, EE Geisz, JF Ridgway, MC
Citation: Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
BGaInAs alloys lattice matched to GaAs
Authors: Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Reedy, RC Swartzlander, AB Keyes, BM Norman, AG
Citation: Jf. Geisz et al., BGaInAs alloys lattice matched to GaAs, APPL PHYS L, 76(11), 2000, pp. 1443-1445
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Far-infrared transmission studies in disordered and ordered Ga0.52In0.48P
Authors: Alsina, F Webb, JD Mascarenhas, A Geisz, JF Olson, JM Duda, A
Citation: F. Alsina et al., Far-infrared transmission studies in disordered and ordered Ga0.52In0.48P, PHYS REV B, 60(3), 1999, pp. 1484-1487
Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs
Authors: Soo, YL Huang, S Kao, YH Chen, JG Hulbert, SL Geisz, JF Kurtz, S Olson, JM Kurtz, SR Jones, ED Allerman, AA
Citation: Yl. Soo et al., Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs, PHYS REV B, 60(19), 1999, pp. 13605-13611
Crystal anisotropy and spin-polarized photoluminescence of ordered GaxIn1-xP
Authors: Fluegel, B Zhang, Y Mascarenhas, A Geisz, JF Olson, JM Duda, A
Citation: B. Fluegel et al., Crystal anisotropy and spin-polarized photoluminescence of ordered GaxIn1-xP, PHYS REV B, 60(16), 1999, pp. R11261-R11264
Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2
Authors: Zhang, Y Mascarenhas, A Ahrenkiel, SP Friedman, DJ Geisz, JF Olson, JM
Citation: Y. Zhang et al., Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2, SOL ST COMM, 109(2), 1999, pp. 99-103
Band anticrossing in GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Band anticrossing in GaInNAs alloys, PHYS REV L, 82(6), 1999, pp. 1221-1224
Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03
Authors: Perkins, JD Mascarenhas, A Zhang, Y Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: Jd. Perkins et al., Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03, PHYS REV L, 82(16), 1999, pp. 3312-3315
Effect of nitrogen on the band structure of GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Effect of nitrogen on the band structure of GaInNAs alloys, J APPL PHYS, 86(4), 1999, pp. 2349-2351
Risultati: 1-25 | 26-32