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Results: 17
Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantumdots (vol 7, pg 151, 2000)
Authors:
Peronne, E
Lampin, JF
Alexandrou, A
Gauthier-Lafaye, O
Julien, FH
Brault, J
Gendry, M
Citation: E. Peronne et al., Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantumdots (vol 7, pg 151, 2000), PHYSICA E, 11(1), 2001, pp. 51-51
Authors:
Fossard, F
Julien, FH
Peronne, E
Alexandrou, A
Brault, J
Gendry, M
Citation: F. Fossard et al., Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications, INFR PHYS T, 42(3-5), 2001, pp. 443-451
Authors:
Sanchez-Almazan, F
Gendry, M
Regreny, P
Bergignat, E
Grenet, G
Hollinger, G
Olivares, J
Bremond, G
Marty, O
Pitaval, M
Citation: F. Sanchez-almazan et al., Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 271-274
Authors:
Sanchez-Almazan, F
Gendry, M
Regreny, P
Bergignat, E
Grenet, G
Hollinger, G
Olivares, J
Bremond, G
Marty, O
Pitaval, M
Canut, B
Citation: F. Sanchez-almazan et al., Growth of GalnTlAs layers on InP by molecular beam epitaxy, J VAC SCI A, 19(3), 2001, pp. 861-870
Authors:
Peronne, E
Polack, T
Lampin, JF
Fossard, F
Julien, F
Brault, J
Gendry, M
Marty, O
Alexandrou, A
Citation: E. Peronne et al., Femtosecond measurement of electron capture and intersubband relaxation inself-organized InAs quantum wires on In1-xAlxAs/InP - art. no. 081307, PHYS REV B, 6308(8), 2001, pp. 1307
Authors:
Finkman, E
Maimon, S
Immer, V
Bahir, G
Schacham, SE
Fossard, F
Julien, FH
Brault, J
Gendry, M
Citation: E. Finkman et al., Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K - art. no. 045323, PHYS REV B, 6304(4), 2001, pp. 5323
Authors:
Monat, C
Seassal, C
Letartre, X
Viktorovitch, P
Regreny, P
Gendry, M
Rojo-Romeo, P
Hollinger, G
Jalaguier, E
Pocas, S
Aspar, B
Citation: C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766
Authors:
Brault, J
Gendry, M
Grenet, G
Solere, A
Phaner-Goutorbe, M
Robach, Y
Porte, L
Hollinger, G
Citation: J. Brault et al., Strained InAs nanostructures self-organised on high-index InP(113)B, APPL SURF S, 166(1-4), 2000, pp. 326-331
Authors:
Brault, J
Gendry, M
Marty, O
Pitaval, M
Olivares, J
Grenet, G
Hollinger, G
Citation: J. Brault et al., Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001), APPL SURF S, 162, 2000, pp. 584-589
Authors:
Seassal, C
Letartre, X
Brault, J
Gendry, M
Pottier, P
Viktorovitch, P
Piquet, O
Blondy, P
Cros, D
Marty, O
Citation: C. Seassal et al., InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation, J APPL PHYS, 88(11), 2000, pp. 6170-6174
Authors:
Letartre, X
Rojo-Romeo, P
Tardy, J
Bejar, M
Gendry, M
Py, MA
Beck, M
Buhlmann, HJ
Ren, L
Villar, C
Sanz-Hervas, A
Serrano, JJ
Blanco, JM
Aguilar, M
Marty, O
Souliere, V
Monteil, Y
Citation: X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173
Authors:
Damlencourt, JF
Leclercq, JL
Gendry, M
Garrigues, M
Aberkane, N
Hollinger, G
Citation: Jf. Damlencourt et al., Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials, JPN J A P 2, 38(9AB), 1999, pp. L996-L999
Authors:
Brault, J
Gendry, M
Grenet, G
Hollinger, G
Desieres, Y
Benyattou, T
Citation: J. Brault et al., Alloying effects in self-assembled InAs InP dots, J CRYST GR, 202, 1999, pp. 1176-1179
Authors:
Jourba, S
Besland, MP
Gendry, M
Garrigues, M
Leclercq, JL
Rojo-Romeo, P
Viktorovich, P
Cortial, S
Hugon, X
Pautet, C
Citation: S. Jourba et al., 2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector, ELECTR LETT, 35(15), 1999, pp. 1272-1274
Authors:
Damlencourt, JF
Leclercq, JL
Gendry, M
Regreny, P
Hollinger, G
Citation: Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640
Authors:
Jourba, S
Gendry, M
Marty, O
Pitaval, M
Hollinger, G
Citation: S. Jourba et al., High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices, APPL PHYS L, 75(2), 1999, pp. 220-222
Authors:
Weber, A
Gauthier-Lafaye, O
Julien, FH
Brault, J
Gendry, M
Desieres, Y
Benyattou, T
Citation: A. Weber et al., Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001), APPL PHYS L, 74(3), 1999, pp. 413-415
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