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Results: 1-17 |
Results: 17

Authors: Peronne, E Lampin, JF Alexandrou, A Gauthier-Lafaye, O Julien, FH Brault, J Gendry, M
Citation: E. Peronne et al., Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantumdots (vol 7, pg 151, 2000), PHYSICA E, 11(1), 2001, pp. 51-51

Authors: Fossard, F Julien, FH Peronne, E Alexandrou, A Brault, J Gendry, M
Citation: F. Fossard et al., Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications, INFR PHYS T, 42(3-5), 2001, pp. 443-451

Authors: Sanchez-Almazan, F Gendry, M Regreny, P Bergignat, E Grenet, G Hollinger, G Olivares, J Bremond, G Marty, O Pitaval, M
Citation: F. Sanchez-almazan et al., Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 271-274

Authors: Sanchez-Almazan, F Gendry, M Regreny, P Bergignat, E Grenet, G Hollinger, G Olivares, J Bremond, G Marty, O Pitaval, M Canut, B
Citation: F. Sanchez-almazan et al., Growth of GalnTlAs layers on InP by molecular beam epitaxy, J VAC SCI A, 19(3), 2001, pp. 861-870

Authors: Peronne, E Polack, T Lampin, JF Fossard, F Julien, F Brault, J Gendry, M Marty, O Alexandrou, A
Citation: E. Peronne et al., Femtosecond measurement of electron capture and intersubband relaxation inself-organized InAs quantum wires on In1-xAlxAs/InP - art. no. 081307, PHYS REV B, 6308(8), 2001, pp. 1307

Authors: Finkman, E Maimon, S Immer, V Bahir, G Schacham, SE Fossard, F Julien, FH Brault, J Gendry, M
Citation: E. Finkman et al., Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K - art. no. 045323, PHYS REV B, 6304(4), 2001, pp. 5323

Authors: Monat, C Seassal, C Letartre, X Viktorovitch, P Regreny, P Gendry, M Rojo-Romeo, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation: C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766

Authors: Brault, J Gendry, M Grenet, G Solere, A Phaner-Goutorbe, M Robach, Y Porte, L Hollinger, G
Citation: J. Brault et al., Strained InAs nanostructures self-organised on high-index InP(113)B, APPL SURF S, 166(1-4), 2000, pp. 326-331

Authors: Brault, J Gendry, M Marty, O Pitaval, M Olivares, J Grenet, G Hollinger, G
Citation: J. Brault et al., Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001), APPL SURF S, 162, 2000, pp. 584-589

Authors: Seassal, C Letartre, X Brault, J Gendry, M Pottier, P Viktorovitch, P Piquet, O Blondy, P Cros, D Marty, O
Citation: C. Seassal et al., InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation, J APPL PHYS, 88(11), 2000, pp. 6170-6174

Authors: Letartre, X Rojo-Romeo, P Tardy, J Bejar, M Gendry, M Py, MA Beck, M Buhlmann, HJ Ren, L Villar, C Sanz-Hervas, A Serrano, JJ Blanco, JM Aguilar, M Marty, O Souliere, V Monteil, Y
Citation: X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173

Authors: Damlencourt, JF Leclercq, JL Gendry, M Garrigues, M Aberkane, N Hollinger, G
Citation: Jf. Damlencourt et al., Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials, JPN J A P 2, 38(9AB), 1999, pp. L996-L999

Authors: Brault, J Gendry, M Grenet, G Hollinger, G Desieres, Y Benyattou, T
Citation: J. Brault et al., Alloying effects in self-assembled InAs InP dots, J CRYST GR, 202, 1999, pp. 1176-1179

Authors: Jourba, S Besland, MP Gendry, M Garrigues, M Leclercq, JL Rojo-Romeo, P Viktorovich, P Cortial, S Hugon, X Pautet, C
Citation: S. Jourba et al., 2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector, ELECTR LETT, 35(15), 1999, pp. 1272-1274

Authors: Damlencourt, JF Leclercq, JL Gendry, M Regreny, P Hollinger, G
Citation: Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640

Authors: Jourba, S Gendry, M Marty, O Pitaval, M Hollinger, G
Citation: S. Jourba et al., High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices, APPL PHYS L, 75(2), 1999, pp. 220-222

Authors: Weber, A Gauthier-Lafaye, O Julien, FH Brault, J Gendry, M Desieres, Y Benyattou, T
Citation: A. Weber et al., Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001), APPL PHYS L, 74(3), 1999, pp. 413-415
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