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Results: 1-22 |
Results: 22
Grafting of high-density poly(ethylene glycol) monolayers on Si(111)
Authors: Zhu, XY Jun, Y Staarup, DR Major, RC Danielson, S Boiadjiev, V Gladfelter, WL Bunker, BC Guo, A
Citation: Xy. Zhu et al., Grafting of high-density poly(ethylene glycol) monolayers on Si(111), LANGMUIR, 17(25), 2001, pp. 7798-7803
High mobility HfO2 n- and p-channel transistors
Authors: Campbell, SA Ma, TZ Smith, R Gladfelter, WL Chen, F
Citation: Sa. Campbell et al., High mobility HfO2 n- and p-channel transistors, MICROEL ENG, 59(1-4), 2001, pp. 361-365
Bis(dimethylamido) complexes of alkyl- and phenylgallium. Useful precursors to the RGa2+ synthon
Authors: Jegier, JA Luo, B Buss, CE Gladfelter, WL
Citation: Ja. Jegier et al., Bis(dimethylamido) complexes of alkyl- and phenylgallium. Useful precursors to the RGa2+ synthon, INORG CHEM, 40(23), 2001, pp. 6017-6021
Gallane complexes with amido-amine ligands
Authors: Luo, B Pink, M Gladfelter, WL
Citation: B. Luo et al., Gallane complexes with amido-amine ligands, INORG CHEM, 40(2), 2001, pp. 307-311
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
Authors: Ma, TZ Campbell, SA Smith, R Hoilien, N He, BY Gladfelter, WL Hobbs, C Buchanan, D Taylor, C Gribelyuk, M Tiner, M Coppel, M Lee, JJ
Citation: Tz. Ma et al., Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates, IEEE DEVICE, 48(10), 2001, pp. 2348-2356
1,1-dimethylhydrazidogallane and a gallium hydrazide with two Ga2N2 rings bridged by two NNMe2 ligands
Authors: Luo, B Gladfelter, WL
Citation: B. Luo et Wl. Gladfelter, 1,1-dimethylhydrazidogallane and a gallium hydrazide with two Ga2N2 rings bridged by two NNMe2 ligands, CHEM COMMUN, (10), 2000, pp. 825-826
Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
Authors: Smith, RC Ma, TZ Hoilien, N Tsung, LY Bevan, MJ Colombo, L Roberts, J Campbell, SA Gladfelter, WL
Citation: Rc. Smith et al., Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide, ADV MAT OPT, 10(3-5), 2000, pp. 105-114
Tip-sample interactions in dynamic force microscopy of polyvinyl alcohol films
Authors: Haugstad, G Gladfelter, WL Jones, RR
Citation: G. Haugstad et al., Tip-sample interactions in dynamic force microscopy of polyvinyl alcohol films, POLYM INT, 49(5), 2000, pp. 427-431
Ammonothermal conversion of cyclotrigallazane to GaN: Synthesis of nanocrystalline and cubic GaN from [H2GaNH2](3)
Authors: Jegier, JA McKernan, S Purdy, AP Gladfelter, WL
Citation: Ja. Jegier et al., Ammonothermal conversion of cyclotrigallazane to GaN: Synthesis of nanocrystalline and cubic GaN from [H2GaNH2](3), CHEM MATER, 12(4), 2000, pp. 1003-1010
Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous TixSi1-xO2 films
Authors: Smith, RC Taylor, CJ Roberts, J Campbell, SA Tiner, M Hegde, R Hobbs, C Gladfelter, WL
Citation: Rc. Smith et al., Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous TixSi1-xO2 films, CHEM MATER, 12(10), 2000, pp. 2822
Syntheses and structures of quinuclidine-stabilized amido- and azidogallanes
Authors: Luo, B Young, VG Gladfelter, WL
Citation: B. Luo et al., Syntheses and structures of quinuclidine-stabilized amido- and azidogallanes, INORG CHEM, 39(8), 2000, pp. 1705-1709
Crystal structures of nitronium tetranitratogallate and its reversible solid-state phase transition mediated by nonmerohedral twinning
Authors: Colombo, DG Young, VG Gladfelter, WL
Citation: Dg. Colombo et al., Crystal structures of nitronium tetranitratogallate and its reversible solid-state phase transition mediated by nonmerohedral twinning, INORG CHEM, 39(20), 2000, pp. 4621-4624
Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
Authors: Smith, RC Hoilien, N Taylor, CJ Ma, TZ Campbell, SA Roberts, JT Copel, M Buchanan, DA Gribelyuk, M Gladfelter, WL
Citation: Rc. Smith et al., Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate, J ELCHEM SO, 147(9), 2000, pp. 3472-3476
The use of aluminum and gallium hydrides in materials science
Authors: Jegier, JA Gladfelter, WL
Citation: Ja. Jegier et Wl. Gladfelter, The use of aluminum and gallium hydrides in materials science, COORD CH RE, 206, 2000, pp. 631-650
Syntheses and structures of quinuclidine-stabilized four- and five-coordinate mono- and di-chlorogallane
Authors: Luo, B Young, VG Gladfelter, WL
Citation: B. Luo et al., Syntheses and structures of quinuclidine-stabilized four- and five-coordinate mono- and di-chlorogallane, CHEM COMMUN, (2), 1999, pp. 123-124
Correlation of nanowear patterns to viscoelastic response in a thin polystyrene melt
Authors: Schmidt, RH Haugstad, G Gladfelter, WL
Citation: Rh. Schmidt et al., Correlation of nanowear patterns to viscoelastic response in a thin polystyrene melt, LANGMUIR, 15(2), 1999, pp. 317-321
Probing polymer viscoelastic relaxations with temperature-controlled friction force microscopy
Authors: Hammerschmidt, JA Gladfelter, WL Haugstad, G
Citation: Ja. Hammerschmidt et al., Probing polymer viscoelastic relaxations with temperature-controlled friction force microscopy, MACROMOLEC, 32(10), 1999, pp. 3360-3367
Solution chemistry of cyclotrigallazane: Supercritical ammonia and Lewis base catalyzed dehydrogenation to produce poly(imidogallane)
Authors: Jegier, JA McKernan, S Gladfelter, WL
Citation: Ja. Jegier et al., Solution chemistry of cyclotrigallazane: Supercritical ammonia and Lewis base catalyzed dehydrogenation to produce poly(imidogallane), INORG CHEM, 38(11), 1999, pp. 2726-2733
Titanium dioxide (TiO2)-based gate insulators
Authors: Campbell, SA Kim, HS Gilmer, DC He, B Ma, T Gladfelter, WL
Citation: Sa. Campbell et al., Titanium dioxide (TiO2)-based gate insulators, IBM J RES, 43(3), 1999, pp. 383-392
Does chemistry really matter in the chemical vapor deposition of titanium dioxide? Precursor and kinetic effects on the microstructure of polycrystalline films
Authors: Taylor, CJ Gilmer, DC Colombo, DG Wilk, GD Campbell, SA Roberts, J Gladfelter, WL
Citation: Cj. Taylor et al., Does chemistry really matter in the chemical vapor deposition of titanium dioxide? Precursor and kinetic effects on the microstructure of polycrystalline films, J AM CHEM S, 121(22), 1999, pp. 5220-5229
RuO2/Ru electrode on Si3N4/Si substrate for microelectromechanical systemsdevices based on Pb(Zr1-xTix)O-3 film and surface micromachining
Authors: Yoon, YS Kim, JH Schmidt, AM Polla, DL Wang, Q Gladfelter, WL Shin, YH
Citation: Ys. Yoon et al., RuO2/Ru electrode on Si3N4/Si substrate for microelectromechanical systemsdevices based on Pb(Zr1-xTix)O-3 film and surface micromachining, J MAT S-M E, 9(6), 1998, pp. 465-471
Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide film
Authors: Colombo, DG Gilmer, DC Young, VG Campbell, SA Gladfelter, WL
Citation: Dg. Colombo et al., Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide film, CHEM VAPOR, 4(6), 1998, pp. 220
Risultati: 1-22 |