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Results: 1-25 | 26-38
Results: 1-25/38
The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ van Laarhoven, HA Look, DC
Citation: Fd. Auret et al., The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO, J PHYS-COND, 13(40), 2001, pp. 8989-8999
Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation
Authors: Goodman, SA Auret, FD Myburg, G Legodi, MJ Gibart, P Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Processing-induced electron traps in n-type GaN
Authors: Auret, FD Goodman, SA Myburg, G Mohney, SE de Lucca, JM
Citation: Fd. Auret et al., Processing-induced electron traps in n-type GaN, MAT SCI E B, 82(1-3), 2001, pp. 102-104
Valacyclovir for the prevention of cytomegalovirus infection after allogeneic stem cell transplantation: a single institution retrospective cohort analysis
Authors: Vusirikala, M Wolff, SN Stein, RS Brandt, SJ Morgan, DS Greer, JP Schuening, FG Dummer, JS Goodman, SA
Citation: M. Vusirikala et al., Valacyclovir for the prevention of cytomegalovirus infection after allogeneic stem cell transplantation: a single institution retrospective cohort analysis, BONE MAR TR, 28(3), 2001, pp. 265-270
Zinc stimulates the activity of the insulin- and nutrient-regulated protein kinase mTOR
Authors: Lynch, CJ Patson, BJ Goodman, SA Trapolsi, D Kimball, SR
Citation: Cj. Lynch et al., Zinc stimulates the activity of the insulin- and nutrient-regulated protein kinase mTOR, AM J P-ENDO, 281(1), 2001, pp. E25-E34
Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ Hullavarad, SS Friedland, E Beaumont, B Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Electrical characterization of 1.8 MeV proton-bombarded ZnO
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ van Laarhoven, HA Look, DC
Citation: Fd. Auret et al., Electrical characterization of 1.8 MeV proton-bombarded ZnO, APPL PHYS L, 79(19), 2001, pp. 3074-3076
Characterization of electron-irradiated n-GaN
Authors: Goodman, SA Auret, FD Legodi, MJ Beaumont, B Gibart, P
Citation: Sa. Goodman et al., Characterization of electron-irradiated n-GaN, APPL PHYS L, 78(24), 2001, pp. 3815-3817
Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE
Authors: Swart, M Auret, FD Goodman, SA
Citation: M. Swart et al., Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE, MAT SC S PR, 3(1-2), 2000, pp. 97-101
Donor origin of circulating endothelial progenitors after allogeneic bone marrow transplantation
Authors: Ikpeazu, C Davidson, MK Halteman, D Goodman, SA Browning, PJ Brandt, SJ
Citation: C. Ikpeazu et al., Donor origin of circulating endothelial progenitors after allogeneic bone marrow transplantation, BIOL BLOOD, 6(3A), 2000, pp. 301-308
Metallisation induced electron traps in epitaxially grown n-type GaN
Authors: Auret, FD Goodman, SA Meyer, WE Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metallisation induced electron traps in epitaxially grown n-type GaN, MAT SCI E B, 71, 2000, pp. 77-81
Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation
Authors: Legodi, MJ Auret, FD Goodman, SA
Citation: Mj. Legodi et al., Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation, MAT SCI E B, 71, 2000, pp. 96-99
Radiation induced defects in MOVPE grown n-GaN
Authors: Goodman, SA Auret, FD Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Sa. Goodman et al., Radiation induced defects in MOVPE grown n-GaN, MAT SCI E B, 71, 2000, pp. 100-103
Fluconazole vs low-dose amphotericin B for the prevention of fungal infections in patients undergoing bone marrow transplantation: a study of the North American Marrow Transplant Group
Authors: Wolff, SN Fay, J Stevens, D Herzig, RH Pohlman, B Bolwell, B Lynch, J Ericson, S Freytes, CO LeMaistre, F Collins, R Pineiro, L Greer, J Stein, R Goodman, SA Dummer, S
Citation: Sn. Wolff et al., Fluconazole vs low-dose amphotericin B for the prevention of fungal infections in patients undergoing bone marrow transplantation: a study of the North American Marrow Transplant Group, BONE MAR TR, 25(8), 2000, pp. 853-859
Outcome of allogeneic stem cell transplantation for B cell chronic lymphocytic leukemia
Authors: Pavletic, ZS Arrowsmith, ER Bierman, PJ Goodman, SA Vose, JM Tarantolo, SR Stein, RS Bociek, G Greer, JP Wu, CD Kollath, JP Weisenburger, DD Kessinger, A Wolff, SN Armitage, JO Bishop, MR
Citation: Zs. Pavletic et al., Outcome of allogeneic stem cell transplantation for B cell chronic lymphocytic leukemia, BONE MAR TR, 25(7), 2000, pp. 717-722
Pt Schottky contacts to n-GaN formed by electrodeposition and physical vapor deposition
Authors: DeLucca, JM Mohney, SE Auret, FD Goodman, SA
Citation: Jm. Delucca et al., Pt Schottky contacts to n-GaN formed by electrodeposition and physical vapor deposition, J APPL PHYS, 88(5), 2000, pp. 2593-2600
High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions
Authors: Mamor, M Ouacha, H Willander, M Auret, FD Goodman, SA Ouacha, A Sveinbjornsson, E
Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752
Protracted results of dose-intensive therapy using cyclophosphamide, carmustine, and continuous infusion etoposide with autologous stem cell support in patients with relapse or refractory Hodgkin's disease: a phase II study from the north American marrow transplant group
Authors: Fleming, DR Wolff, SN Fay, JW Brown, RA Lynch, JP Bolwell, BJ Stevens, DA Goodman, SA Greer, JP Stein, RS Pineiro, LA Collins, RH Goldsmith, LJ Herzig, GP Herzig, RH
Citation: Dr. Fleming et al., Protracted results of dose-intensive therapy using cyclophosphamide, carmustine, and continuous infusion etoposide with autologous stem cell support in patients with relapse or refractory Hodgkin's disease: a phase II study from the north American marrow transplant group, LEUK LYMPH, 35(1-2), 1999, pp. 91-98
Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
Authors: Auret, FD Goodman, SA Myburg, G Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts, PHYSICA B, 274, 1999, pp. 84-87
Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN
Authors: Auret, FD Meyer, WE Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN, PHYSICA B, 274, 1999, pp. 92-95
Dopant-related metastable defects in particle irradiated n-GaAs
Authors: Legodi, MJ Auret, FD Goodman, SA
Citation: Mj. Legodi et al., Dopant-related metastable defects in particle irradiated n-GaAs, PHYSICA B, 274, 1999, pp. 762-765
Determination of normal values using an automated coagulation timer for activated coagulation time and its application in dogs with hemophilia
Authors: Gerber, B Taboada, J Lothrop, CD Busato, A Hosgood, G Goodman, SA Gaschen, FP
Citation: B. Gerber et al., Determination of normal values using an automated coagulation timer for activated coagulation time and its application in dogs with hemophilia, J VET INT M, 13(5), 1999, pp. 433-436
The relationship between organizational characteristics and team building success
Authors: Svyantek, DJ Goodman, SA Benz, LL Gard, JA
Citation: Dj. Svyantek et al., The relationship between organizational characteristics and team building success, J BUS PSYCH, 14(2), 1999, pp. 265-283
Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma
Authors: Mamor, M Auret, FD Willander, M Goodman, SA Myburg, G Meyer, F
Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614
The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector
Authors: Goodman, SA Auret, FD du Plessis, M Meyer, WE
Citation: Sa. Goodman et al., The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector, SEMIC SCI T, 14(4), 1999, pp. 323-326
Risultati: 1-25 | 26-38