Authors:
Driscoll, DC
Hanson, M
Kadow, C
Gossard, AC
Citation: Dc. Driscoll et al., Transition to insulating behavior in the metal-semiconductor digital composite ErAs : InGaAs, J VAC SCI B, 19(4), 2001, pp. 1631-1634
Authors:
Butov, LV
Imamoglu, A
Campman, KL
Gossard, AC
Citation: Lv. Butov et al., Coulomb effects in spatially separated electron and hole layers in coupledquantum wells (vol 92, pg 260, 2001), J EXP TH PH, 92(4), 2001, pp. 752-752
Authors:
Butov, LV
Imamoglu, A
Campman, KL
Gossard, AC
Citation: Lv. Butov et al., Coulomb effects in spatially separated electron and hole layers in coupledquantum wells, J EXP TH PH, 92(2), 2001, pp. 260-266
Authors:
Woodside, MT
Vale, C
McEuen, PL
Kadow, C
Maranowski, KD
Gossard, AC
Citation: Mt. Woodside et al., Imaging interedge-state scattering centers in the quantum Hall regime - art. no. 041310, PHYS REV B, 6404(4), 2001, pp. 1310
Authors:
Williams, JB
Sherwin, MS
Maranowski, KD
Gossard, AC
Citation: Jb. Williams et al., Dissipation of intersubband plasmons in wide quantum wells - art. no. 037401, PHYS REV L, 8703(3), 2001, pp. 7401-NIL_140
Authors:
Kycia, JB
Chen, J
Therrien, R
Kurdak, C
Campman, KL
Gossard, AC
Clarke, J
Citation: Jb. Kycia et al., Effects of dissipation on a superconducting single electron transistor - art. no. 017002, PHYS REV L, 8701(1), 2001, pp. 7002-NIL_116
Authors:
Butov, LV
Ivanov, AL
Imamoglu, A
Littlewood, PB
Shashkin, AA
Dolgopolov, VT
Campman, KL
Gossard, AC
Citation: Lv. Butov et al., Stimulated scattering of indirect excitons in coupled quantum wells: Signature of a degenerate Bose-gas of excitons, PHYS REV L, 86(24), 2001, pp. 5608-5611
Authors:
Duffy, SM
Verghese, S
McIntosh, KA
Jackson, A
Gossard, AC
Matsuura, S
Citation: Sm. Duffy et al., Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power, IEEE MICR T, 49(6), 2001, pp. 1032-1038
Authors:
Driscoll, DC
Hanson, M
Kadow, C
Gossard, AC
Citation: Dc. Driscoll et al., Electronic structure and conduction in a metal-semiconductor digital composite: ErAs : InGaAs, APPL PHYS L, 78(12), 2001, pp. 1703-1705
Authors:
Hu, JM
Deng, T
Beck, RG
Westervelt, RM
Maranowski, KD
Gossard, AC
Whitesides, GM
Citation: Jm. Hu et al., Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography, SENS ACTU-A, 86(1-2), 2000, pp. 122-126
Authors:
Munteanu, FM
Kim, Y
Perry, CH
Heiman, D
Rickel, DG
Sundaram, M
Gossard, AC
Citation: Fm. Munteanu et al., Polarization-dependent spectral redshifts at nu=1 and nu=2 in a GaAs quantum well in high magnetic fields up to 60 T, PHYS REV B, 62(7), 2000, pp. 4249-4252
Authors:
Butov, LV
Mintsev, AV
Lozovik, YE
Campman, KL
Gossard, AC
Citation: Lv. Butov et al., From spatially indirect excitons to momentum-space indirect excitons by anin-plane magnetic field, PHYS REV B, 62(3), 2000, pp. 1548-1551
Authors:
Khrapai, VS
Deviatov, EV
Shashkin, AA
Dolgopolov, VT
Hastreiter, F
Wixforth, A
Campman, KL
Gossard, AC
Citation: Vs. Khrapai et al., Canted antiferromagnetic phase in a double quantum well in a tilted quantizing magnetic field, PHYS REV L, 84(4), 2000, pp. 725-728