Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Citation: K. Wieteska et al., Application of Bragg-case section topography for strain profile determination in A(III)B(V) implanted semiconductors, J PHYS D, 34(10A), 2001, pp. A122-A127
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography, J SYNCHROTR, 7, 2000, pp. 318-325
Citation: W. Wierzchowski et al., Numerical simulation of Bragg-case section topographic images of dislocations in silicon, J PHYS D, 33(10), 2000, pp. 1230-1238
Authors:
Wierzchowski, W
Wieteska, K
Graeff, W
Turos, A
Citation: W. Wierzchowski et al., Interference fringes in plane-wave topography of AlxCa1-xAs epitaxial layers implanted with Se ions, J ALLOY COM, 286(1-2), 1999, pp. 343-348
Authors:
Wierzchowski, W
Wieteska, K
Graeff, W
Gawlik, G
Pawlowska, M
Citation: W. Wierzchowski et al., White beam synchrotron topographic characterisation of silicon wafers directly bonded by oxide layer, ACT PHY P A, 96(2), 1999, pp. 283-288
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Lattice deformation in AlxGa1-xAs epitaxial layers caused by implantation with high doses of 1 MeV Si ions, ACT PHY P A, 96(2), 1999, pp. 289-293