Authors:
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
Citation: S. Sanguinetti et al., Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 111-114
Authors:
Pizzini, S
Guzzi, M
Grilli, E
Borionetti, G
Citation: S. Pizzini et al., The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon, J PHYS-COND, 12(49), 2000, pp. 10131-10143
Authors:
Sanguinetti, S
Padovani, M
Gurioli, M
Grilli, E
Guzzi, M
Vinattieri, A
Colocci, M
Frigeri, P
Franchi, S
Lazzarini, L
Salviati, G
Citation: S. Sanguinetti et al., Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures, THIN SOL FI, 380(1-2), 2000, pp. 224-226
Authors:
Sanguinetti, S
Padovani, M
Gurioli, M
Grilli, E
Guzzi, M
Vinattieri, A
Colocci, M
Frigeri, P
Franchi, S
Citation: S. Sanguinetti et al., Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, APPL PHYS L, 77(9), 2000, pp. 1307-1309
Authors:
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Henini, M
Citation: S. Sanguinetti et al., Piezoelectric-induced quantum-confined Stark effect in self-assembled InAsquantum dots grown on (N11) GaAs substrates, APPL PHYS L, 77(13), 2000, pp. 1982-1984
Authors:
Sanguinetti, S
Chiantoni, G
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., Substrate orientation dependence of island nucleation critical thickness in strained heterostructures, EUROPH LETT, 47(6), 1999, pp. 701-707
Authors:
Schieber, M
Zuck, A
Sanguinetti, S
Montalti, M
Braiman, M
Melekhov, L
Nissenbaum, J
Grilli, E
Guzzi, M
Turchetta, R
Dulinski, W
Husson, D
Riester, JL
Citation: M. Schieber et al., Characterization studies of purified HgI2 precursors, NUCL INST A, 428(1), 1999, pp. 25-29
Authors:
Sanguinetti, S
Miotto, A
Castiglioni, S
Grilli, E
Guzzi, M
Henini, M
Polimeni, A
Patane, A
Eaves, L
Main, PC
Citation: S. Sanguinetti et al., Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces, MICROELEC J, 30(4-5), 1999, pp. 419-425