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Results: 1-25/73
Authors:
Krukowski, S
Bockowski, M
Lucznik, B
Grzegory, I
Porowski, S
Suski, T
Romanowski, Z
Citation: S. Krukowski et al., High-nitrogen-pressure growth of GaN single crystals: doping and physical properties, J PHYS-COND, 13(40), 2001, pp. 8881-8890
Authors:
Grzegory, I
Citation: I. Grzegory, High pressure growth of bulk GaN from solutions in gallium, J PHYS-COND, 13(32), 2001, pp. 6875-6892
Authors:
Grzegory, I
Citation: I. Grzegory, High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures, MAT SCI E B, 82(1-3), 2001, pp. 30-34
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Massies, J
Grzegory, I
Porowsky, S
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Authors:
Morel, A
Taliercio, T
Lefebvre, P
Gallart, M
Gil, B
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Authors:
Wetzel, C
Amano, T
Akasaki, I
Ager, JW
Grzegory, I
Meyer, BK
Citation: C. Wetzel et al., DX-like behavior of oxygen in GaN, PHYSICA B, 302, 2001, pp. 23-38
Authors:
Neu, G
Teisseire, M
Lemasson, P
Lahreche, H
Grandjean, N
Semond, F
Beaumont, B
Grzegory, I
Porowski, S
Triboulet, R
Citation: G. Neu et al., Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors, PHYSICA B, 302, 2001, pp. 39-53
Authors:
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: N. Grandjean et al., GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy, SEMIC SCI T, 16(5), 2001, pp. 358-361
Authors:
Bayerl, MW
Brandt, MS
Ambacher, O
Stutzmann, M
Glaser, ER
Henry, RL
Wickenden, AE
Koleske, DD
Suski, T
Grzegory, I
Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
Authors:
Oila, J
Ranki, V
Kivioja, J
Saarinen, K
Hautojarvi, P
Likonen, J
Baranowski, JM
Pakula, K
Suski, T
Leszczynski, M
Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Authors:
Kowalski, BJ
Plucinski, L
Kopalko, K
Iwanowski, RJ
Orlowski, BA
Johnson, RL
Grzegory, I
Porowski, S
Citation: Bj. Kowalski et al., Photoemission studies on GaN(0 0 0 (1)over-bar) surfaces, SURF SCI, 482, 2001, pp. 740-745
Authors:
Taliercio, T
Gallart, M
Lefebvre, P
Morel, A
Gil, B
Allegre, J
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Authors:
Ruf, T
Serrano, J
Cardona, M
Pavone, P
Pabst, M
Krisch, M
D'Astuto, M
Suski, T
Grzegory, I
Leszczynski, M
Citation: T. Ruf et al., Phonon dispersion curves in wurtzite-structure GaN determined by inelasticx-ray scattering, PHYS REV L, 86(5), 2001, pp. 906-909
Authors:
Leszczynski, M
Prystawko, P
Czernecki, R
Lehnert, J
Suski, T
Perlin, P
Wisniewski, P
Grzegory, I
Nowak, G
Porowski, S
Albrecht, M
Citation: M. Leszczynski et al., III-N ternary epi-layers grown on the GaN bulk crystals, J CRYST GR, 231(3), 2001, pp. 352-356
Authors:
Suski, T
Litwin-Staszewska, E
Perlin, P
Wisniewski, P
Teisseyre, H
Grzegory, I
Bockowski, M
Porowski, S
Saarinen, K
Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Authors:
Frayssinet, E
Knap, W
Krukowski, S
Perlin, P
Wisniewski, P
Suski, T
Grzegory, I
Porowski, S
Citation: E. Frayssinet et al., Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals, J CRYST GR, 230(3-4), 2001, pp. 442-447
Authors:
Romanowski, Z
Krukowski, S
Grzegory, I
Porowski, S
Citation: Z. Romanowski et al., Surface reaction of nitrogen with liquid group III metals, J CHEM PHYS, 114(14), 2001, pp. 6353-6363
Authors:
Litwin-Staszewska, E
Suski, T
Piotrzkowski, R
Grzegory, I
Bockowski, M
Robert, JL
Konczewicz, L
Wasik, D
Kaminska, E
Cote, D
Clerjaud, B
Citation: E. Litwin-staszewska et al., Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing, J APPL PHYS, 89(12), 2001, pp. 7960-7965
Authors:
Jursenas, S
Kurilcik, N
Kurilcik, G
Zukauskas, A
Prystawko, P
Leszcynski, M
Suski, T
Perlin, P
Grzegory, I
Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
Authors:
Wetzel, C
Amano, H
Akasaki, I
Ager, JW
Grzegory, I
Topf, M
Meyer, BK
Citation: C. Wetzel et al., Localized vibrational modes in GaN : O tracing the formation of oxygen DX-like centers under hydrostatic pressure, PHYS REV B, 61(12), 2000, pp. 8202-8206
Authors:
Zauner, ARA
Schermer, JJ
van Enckevort, WJP
Kirilyuk, V
Weyher, J
Grzegory, I
Hageman, PR
Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial growth on misoriented GaN substrates by MOCVD, MRS I J N S, 5, 2000, pp. NIL_365-NIL_370
Authors:
Liliental-Weber, Z
Benamara, M
Swider, W
Washburn, J
Grzegory, I
Porowski, S
Dupuis, RD
Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Authors:
Kirchner, C
Schwegler, V
Eberhard, F
Kamp, M
Ebeling, KJ
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: C. Kirchner et al., MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices, PROG CRYST, 41(1-4), 2000, pp. 57-83
Authors:
Teisseyre, H
Ochalski, TJ
Perlin, P
Suski, T
Leszczynski, M
Grzegory, I
Bockowski, M
Lucznik, B
Bugajski, M
Palczewska, M
Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Authors:
Grzegory, I
Citation: I. Grzegory, Application of GaN pressure grown crystals for epitaxy of GaN-based structures, ACT PHY P A, 98(3), 2000, pp. 183-193