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Results: 1-9 |
Results: 9
MULTITONE POWER AND INTERMODULATION LOAD-PULL CHARACTERIZATION OF MICROWAVE TRANSISTORS SUITABLE FOR LINEAR SSPAS DESIGN
Authors: HAJJI R BEAUREGARD F GHANNOUCHI FM
Citation: R. Hajji et al., MULTITONE POWER AND INTERMODULATION LOAD-PULL CHARACTERIZATION OF MICROWAVE TRANSISTORS SUITABLE FOR LINEAR SSPAS DESIGN, IEEE transactions on microwave theory and techniques, 45(7), 1997, pp. 1093-1099
SMALL-SIGNAL DISTRIBUTED MODEL FOR GAAS HBTS AND S-PARAMETER PREDICTION AT MILLIMETER-WAVE FREQUENCIES
Authors: HAJJI R GHANNOUCHI FM
Citation: R. Hajji et Fm. Ghannouchi, SMALL-SIGNAL DISTRIBUTED MODEL FOR GAAS HBTS AND S-PARAMETER PREDICTION AT MILLIMETER-WAVE FREQUENCIES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 723-732
SYSTEMATIC DC SMALL-SIGNAL LARGE-SIGNAL ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING A NEW CONSISTENT NONLINEAR MODEL
Authors: HAJJI R KOUKI AB ELRABAIE S GHANNOUCHI FM
Citation: R. Hajji et al., SYSTEMATIC DC SMALL-SIGNAL LARGE-SIGNAL ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING A NEW CONSISTENT NONLINEAR MODEL, IEEE transactions on microwave theory and techniques, 44(2), 1996, pp. 233-241
LARGE-SIGNAL TEMPERATURE-DEPENDENT DC MODEL FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: HAJJI R ELRABAIE S KOUKI AB GHANNOUCHI FM
Citation: R. Hajji et al., LARGE-SIGNAL TEMPERATURE-DEPENDENT DC MODEL FOR HETEROJUNCTION BIPOLAR-TRANSISTORS, IEE proceedings. Microwaves, antennas and propagation, 142(5), 1995, pp. 417-419
A NEW NONLINEAR DC MODEL FOR HBT AND MESFET POWER DEVICES
Authors: HAJJI R KOUKI AB GHANNOUCHI FM
Citation: R. Hajji et al., A NEW NONLINEAR DC MODEL FOR HBT AND MESFET POWER DEVICES, Microwave and optical technology letters, 9(3), 1995, pp. 130-133
A DE-EMBEDDING TECHNIQUE FOR REFLECTION-BASED S-PARAMETER MEASUREMENTS OF HMICS AND MMICS
Authors: GHANNOUCHI FM BEAUREGARD F HAJJI R BRODEUR A
Citation: Fm. Ghannouchi et al., A DE-EMBEDDING TECHNIQUE FOR REFLECTION-BASED S-PARAMETER MEASUREMENTS OF HMICS AND MMICS, Microwave and optical technology letters, 10(4), 1995, pp. 218-222
A SYSTEMATIC LAYOUT-BASED METHOD FOR THE MODELING OF HIGH-POWER HBTS USING THE SCALING APPROACH
Authors: HAJJI R GHANNOUCHI FM KOUKI AB
Citation: R. Hajji et al., A SYSTEMATIC LAYOUT-BASED METHOD FOR THE MODELING OF HIGH-POWER HBTS USING THE SCALING APPROACH, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 528-533
A NEW DC MODEL OF HBT INCLUDING SELF-HEATING EFFECT SUITABLE FOR CIRCUIT SIMULATORS
Authors: DUPUIS J HAJJI R GHANNOUCHI FM SAAB K LAVALLEE S
Citation: J. Dupuis et al., A NEW DC MODEL OF HBT INCLUDING SELF-HEATING EFFECT SUITABLE FOR CIRCUIT SIMULATORS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2036-2042
ON THE USE OF S-PARAMETER MEASUREMENTS TO MODEL HBT INTRINSIC ELEMENTS FOR LARGE-SIGNAL ANALYSIS PURPOSES
Authors: HAJJI R GHANNOUCHI FM
Citation: R. Hajji et Fm. Ghannouchi, ON THE USE OF S-PARAMETER MEASUREMENTS TO MODEL HBT INTRINSIC ELEMENTS FOR LARGE-SIGNAL ANALYSIS PURPOSES, Microwave and optical technology letters, 6(10), 1993, pp. 605-607
Risultati: 1-9 |